Philips BC857BS Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
handbook, halfpage
MBD128
BC857BS
PNP general purpose double
transistor
Product specification
Supersedes data of 1997 Jul 09
1999 Apr 26
Philips Semiconductors Product specification
PNP general purpose double transistor BC857BS
FEATURES
• Low collector capacitance
• Low collector-emitter saturation voltage
• Closely matched current gain
• Reduces number of components and boardspace
PINNING
PIN DESCRIPTION
1, 4 emitter TR1; TR2
2, 5 base TR1; TR2
6, 3 collector TR1; TR2
• No mutual interference between the transistors.
APPLICATIONS
• General purpose switching and amplification.
handbook, halfpage
DESCRIPTION
PNP double transistor in an SC-88; SOT363 plastic
package. NPN complement: BC847BS.
MARKING
TYPE NUMBER MARKING CODE
Fig.1 Simplified outline (SC-88; SOT363)
BC857BS 3Ft
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
132
Top view
and symbol.
56
4
MAM339
645
TR2
TR1
132
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per transistor
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter −−50 V
collector-emitter voltage open base −−45 V
emitter-base voltage open collector −−5V
collector current (DC) −−100 mA
peak collector current −−200 mA
peak base current −−200 mA
total power dissipation T
≤ 25 °C − 200 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Per device
P
tot
total power dissipation T
≤ 25 °C; note 1 − 300 mW
amb
Note
1. Device mounted on an FR4 printed-circuit board.
1999 Apr 26 2
Philips Semiconductors Product specification
PNP general purpose double transistor BC857BS
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Per device
R
th j-a
Note
1. Device mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Per transistor
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
V
BE
C
c
C
e
f
T
thermal resistance from junction to ambient note 1 416 K/W
collector cut-off current IE= 0; VCB= −30 V −−−15 nA
I
= 0; VCB= −30 V; Tj= 150 °C −−−5µA
E
emitter cut-off current IC= 0; VEB= −5V −−−100 nA
DC current gain IC= −2 mA; VCE= −5 V 200 − 450
collector-emitter saturation
voltage
IC= −10 mA; IB= −0.5 mA −−−100 mV
I
= −100 mA; IB= −5 mA; note 1 −−−400 mV
C
base-emitter saturation voltage IC= −10 mA; IB= −0.5 mA −−755 − mV
base-emitter voltage IC= −2 mA; VCE= −5V −600 −655 −750 mV
collector capacitance IE=ie= 0; VCB= −10 V; f = 1 MHz −−2.2 pF
emitter capacitance IC=ic= 0; VEB= −500 mV; f = 1 MHz − 10 − pF
transition frequency IC= −10 mA; VCE= −5 V; f = 100 MHz 100 −−MHz
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
1999 Apr 26 3
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