Philips BC858CF, BC857BF, BC858AF, BC857CF, BC858BF Datasheet
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DATA SH EET
Preliminary specification
Supersedes data of 1998 Nov 10
1999 May 21
DISCRETE SEMICONDUCTORS
BC856F; BC857F; BC858F series
PNP general purpose transistors
M3D425
1999 May 21 2
Philips Semiconductors Preliminary specification
PNP general purpose transistors BC856F; BC857F; BC858F series
FEATURES
• Power dissipation comparable to SOT23
• Low current (max. 100 mA)
• Low voltage (max. 65 V).
APPLICATIONS
• General purpose switching and amplification especially
in portable equipment.
DESCRIPTION
PNP transistor encapsulated in an ultra small SC-89
(SOT490) plastic SMD package.
NPN complements: BC846F, BC847F and BC848F series.
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
Fig.1 Simplified outline (SC-89; SOT490) and
symbol.
handbook, halfpage
MAM411
1
2
3
12
Top view
3
MARKING
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
BC856AF 3A BC857CF 3G
BC856BF 3B BC858AF 3J
BC857AF 3E BC858BF 3K
BC857BF 3F BC858CF 3L
1999 May 21 3
Philips Semiconductors Preliminary specification
PNP general purpose transistors BC856F; BC857F; BC858F series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
BC856AF; BC856BF −−80 V
BC857AF; BC857BF; BC857CF −−50 V
BC858AF; BC858BF; BC858CF −−30 V
V
CEO
collector-emitter voltage open base
BC856AF; BC856BF −−65
BC857AF; BC857BF; BC857CF −−45
BC858AF; BC858BF; BC858CF −−30
V
EBO
emitter-base voltage open collector −−5V
I
C
collector current (DC) −−100 mA
I
CM
peak collector current −−200 mA
I
BM
peak base current −−100 mA
P
tot
total power dissipation T
amb
≤ 25 °C; note 1 − 250 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
operating ambient temperature −65 +150 °C
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