Philips BC857BW, BC857W, BC857CW, BC857AW, BC856W Datasheet
...
DISCRETE SEMICONDUCTORS
DATA SH EET
andbook, halfpage
M3D187
BC856W; BC857W
PNP general purpose transistors
Product specification
Supersedes data of 1997 Apr 07
1999 Apr 12
Philips Semiconductors Product specification
PNP general purpose transistors BC856W; BC857W
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 80)
• S-mini package.
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
PNP transistor in a plastic SOT323 package.
NPN complements: BC846W and BC847W.
MARKING
TYPE
NUMBER
MARKING
(1)
CODE
TYPE
NUMBER
MARKING
CODE
BC856W 3D∗ BC857AW 3E∗
BC856AW 3A∗ BC857BW 3F∗
BC856BW 3B∗ BC857CW 3G∗
BC857W 3H∗
(1)
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
3
3
1
2
1
2
MAM048
Note
1. ∗ = - : Made in Hong Kong.
∗ = t : Made in Malaysia.
Fig.1 Simplified outline (SOT323) and symbol.
1999 Apr 12 2
Philips Semiconductors Product specification
PNP general purpose transistors BC856W; BC857W
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter
BC856W −−80 V
BC857W −−50 V
collector-emitter voltage open base
BC856W −−65 V
BC857W −−45 V
emitter-base voltage open collector −−5V
collector current (DC) −−100 mA
peak collector current −−200 mA
peak base current −−200 mA
total power dissipation T
≤ 25 °C; note 1 − 200 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 12 3
Philips Semiconductors Product specification
PNP general purpose transistors BC856W; BC857W
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
V
BE
C
c
C
e
f
T
F noise figure I
thermal resistance from junction to ambient note 1 625 K/W
collector cut-off current IE= 0; VCB= −30 V −−15 nA
I
= 0; VCB= −30 V; Tj= 150 °C −−4µA
E
emitter cut-off current IC= 0; VEB= −5V −−100 nA
DC current gain IC= −2 mA; VCE= −5V;
BC856W 125 475
see Figs 2, 3 and 4
BC857W 125 800
BC856AW; BC857AW 125 250
BC856BW; BC857BW 220 475
BC857CW 420 800
collector-emitter saturation voltage IC= −10 mA; IB= −0.5 mA −−300 mV
I
= −100 mA; IB= −5 mA; note 1 −−650 mV
C
base-emitter saturation voltage IC= −100 mA; IB= −5 mA; note 1 −−950 mV
base-emitter voltage IC= −2 mA; VCE= −5V −600 −750 mV
I
= −10 mA; VCE= −5V −−820 mV
C
collector capacitance IE=ie= 0; VCB= −10 V; f = 1 MHz − 5pF
emitter capacitance IC=ic=0; VEB= −0.5 V; f = 1 MHz − 12 pF
transition frequency IC= −10 mA; VCE= −5 V; f = 100 MHz 100 − MHz
= −200 µA; VCE= −5 V; RS=2kΩ;
C
− 10 dB
f = 1 kHz; B = 200 Hz
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
1999 Apr 12 4
Loading...