Philips BC857C, BC857A, BC857, BC856B, BC856A Datasheet
...
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D088
BC856; BC857
PNP general purpose transistors
Product specification
Supersedes data of 1997 Apr 17
1999 Apr 12
Philips Semiconductors Product specification
PNP general purpose transistors BC856; BC857
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 65 V).
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
PNP transistor in a SOT23 plastic package.
NPN complements: BC846 and BC847.
MARKING
TYPE
NUMBER
MARKING
(1)
CODE
TYPE
NUMBER
MARKING
CODE
BC856 3D∗ BC857A 3E∗
BC856A 3A∗ BC857B 3F∗
BC856B 3B∗ BC857C 3G∗
BC857 3H∗
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
(1)
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
3
21
MAM256
Fig.1 Simplified outline (SOT23) and symbol.
3
1
2
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
BC856 −−80 V
BC857 −−50 V
V
CEO
collector-emitter voltage open base
BC856 −−65 V
BC857 −−45 V
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
emitter-base voltage open collector −−5V
collector current (DC) −−100 mA
peak collector current −−200 mA
peak base current −−200 mA
total power dissipation T
≤ 25 °C; note 1 − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Mounted on an FR4 printed-circuit board.
1999 Apr 12 2
Philips Semiconductors Product specification
PNP general purpose transistors BC856; BC857
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
V
BE
C
c
f
T
F noise figure I
thermal resistance from junction to ambient note 1 500 K/W
collector cut-off current IE= 0; VCB= −30 V −−1−15 nA
I
= 0; VCB= −30 V; Tj= 150 °C −−−4µA
E
emitter cut-off current IC= 0; VEB= −5V −−100 nA
DC current gain IC= −2 mA; VCE= −5V;
BC856 125 − 475
see Figs 2, 3 and 4
BC857 125 − 800
BC856A; BC857A 125 − 250
BC856B; BC857B 220 − 475
BC857C 420 − 800
collector-emitter saturation
voltage
IC= −10 mA; IB= −0.5 mA −−75 −300 mV
I
= −100 mA; IB= −5mA −−250 −650 mV
C
base-emitter saturation voltage IC= −10 mA; IB= −0.5 mA; note 1 −−700 − mV
I
= −100 mA; IB= −5 mA; note 1 −−850 − mV
C
base-emitter voltage IC= −2 mA; VCE= −5 V; note 2 −600 −650 −750 mV
I
= −10 mA; VCE= −5 V; note 2 −−−820 mV
C
collector capacitance IE=ie= 0; VCB= −10 V; f = 1 MHz − 4.5 − pF
transition frequency IC= −10 mA; VCE= −5V;
100 −−MHz
f = 100 MHz
= −200 µA; VCE= −5V;
C
− 210dB
RS=2kΩ; f = 1 kHz; B = 200 Hz
Notes
1. V
decreases by about −1.7 m K/V with increasing temperature.
BEsat
2. VBE decreases by about −2 mV/K with increasing temperature.
1999 Apr 12 3
Loading...