Philips bc856t, bc857t DATASHEETS
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D173
BC856T; BC857T series
PNP general purpose transistors
Product specification
Supersedes data of 1999 Apr 26
2000 Nov 15
Philips Semiconductors Product specification
PNP general purpose transistors BC856T; BC857T series
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 65 V).
APPLICATIONS
• General purposeswitching and amplification, especially
in portable equipment.
DESCRIPTION
PNP transistor in an SC-75 (SOT416) plastic package.
NPN complements: BC846T; BC847T series.
MARKING
TYPE NUMBER MARKING CODE
BC856AT 3A
BC856BT 3B
BC857AT 3E
BC857BT 3F
BC857CT 3G
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
12
Top view
3
1
Fig.1 Simplified outline (SC-75; SOT416) and
symbol.
3
2
MAM362
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
BC856AT; BC856BT −−80 V
BC857AT; BC857BT; BC857CT −−50 V
V
CEO
collector-emitter voltage open base
BC856AT; BC856BT −−65 V
BC857AT; BC857BT; BC857CT −−45 V
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
emitter-base voltage open collector −−5V
collector current (DC) −−100 mA
peak collector current −−200 mA
peak base current −−100 mA
total power dissipation T
≤ 25 °C; note 1 − 150 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
2000 Nov 15 2
Philips Semiconductors Product specification
PNP general purpose transistors BC856T; BC857T series
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
=25°C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BE
C
c
C
e
f
T
F noise figure I
thermal resistance from junction to ambient in free air; note 1 833 K/W
collector-base cut-off current VCB= −30 V; IE=0 −−−15 nA
V
= −30 V; IE= 0; Tj= 150 °C −−−5µA
CB
emitter cut-off current VEB= −5 V; IC=0 −−−100 nA
DC current gain VCE= −5 V; IC= −2mA
BC856AT; BC857AT 125 − 250
BC856BT; BC857BT 220 − 475
BC857CT 420 − 800
collector-emitter saturation
voltage
IC= −10 mA; IB= −0.5 mA −−−200 mV
I
= −100 mA; IB= −5 mA; note 1 −−−400 mV
C
base-emitter voltage IC= −2 mA; VCE= −5V −580 −−700 mV
I
= −10 mA; VCE= −5V −−−770 mV
C
collector capacitance VCB= −10 V; f = 1 MHz; IE=ie=0 −−2.5 pF
emitter capacitance VEB= −0.5 V; f = 1 MHz; IC=ic=0 − 10 − pF
transition frequency IC= −10 mA; VCE= −5V;
100 −−MHz
f = 100 MHz
= −200 µA; VCE= −5V;
C
−−10 dB
RS=2kΩ; f = 1 kHz; B = 200 Hz
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
2000 Nov 15 3
Philips Semiconductors Product specification
PNP general purpose transistors BC856T; BC857T series
GRAPHICAL INFORMATION BC857AT
500
handbook, halfpage
h
FE
400
300
200
100
0
−10−2−10
VCE= −5V.
(1) T
(2) T
(3) T
amb
amb
amb
= 150 °C.
=25°C.
= −55 °C.
Fig.2 DC current gain; typical values.
(1)
(2)
(3)
−1
−1 −10 −10
MGT711
2
IC (mA)
−10
−1200
handbook, halfpage
V
BE
(mV)
MGT712
−1000
−800
(1)
(2)
−600
−400
(3)
−200
3
0
−10−2−10
−1
−1 −10 −102−10
3
IC (mA)
VCE= −5V.
(1) T
(2) T
(3) T
amb
amb
amb
= −55 °C.
=25°C.
= 150 °C.
Fig.3 Base-emitter voltage as a function of
collector current; typical values.
4
−10
handbook, halfpage
V
CEsat
(mV)
3
−10
2
−10
−10
−1
−10
(1)
(2)(3)
−1 −10 −10
MGT713
2
IC (mA)
IC/IB= 20.
(1) T
(2) T
(3) T
amb
amb
amb
= 150 °C.
=25°C.
= −55 °C.
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
−10
−1200
handbook, halfpage
V
BEsat
(mV)
−1000
−800
−600
(1)
(2)
(3)
MGT714
−400
−200
0
3
−10
−1
−1 −10 −10
2
−10
3
IC (mA)
IC/IB= 20.
(1) T
(2) T
(3) T
amb
amb
amb
= −55 °C.
=25°C.
= 150 °C.
Fig.5 Base-emitter saturation voltage as a
function of collector current; typical values.
2000 Nov 15 4
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