Philips bc856f, bc8 57f, bc858f DATASHEETS
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D425
BC856F; BC857F; BC858F series
PNP general purpose transistors
Preliminary specification
Supersedes data of 1998 Nov 10
1999 May 21
Philips Semiconductors Preliminary specification
PNP general purpose transistors BC856F; BC857F; BC858F series
FEATURES
• Power dissipation comparable to SOT23
• Low current (max. 100 mA)
• Low voltage (max. 65 V).
APPLICATIONS
• General purpose switching and amplification especially
in portable equipment.
DESCRIPTION
PNP transistor encapsulated in an ultra small SC-89
(SOT490) plastic SMD package.
NPN complements: BC846F, BC847F and BC848F series.
MARKING
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
BC856AF 3A BC857CF 3G
BC856BF 3B BC858AF 3J
BC857AF 3E BC858BF 3K
BC857BF 3F BC858CF 3L
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
12
Top view
3
1
MAM411
Fig.1 Simplified outline (SC-89; SOT490) and
symbol.
3
2
1999 May 21 2
Philips Semiconductors Preliminary specification
PNP general purpose transistors BC856F; BC857F; BC858F series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter
BC856AF; BC856BF −−80 V
BC857AF; BC857BF; BC857CF −−50 V
BC858AF; BC858BF; BC858CF −−30 V
collector-emitter voltage open base
BC856AF; BC856BF −−65
BC857AF; BC857BF; BC857CF −−45
BC858AF; BC858BF; BC858CF −−30
emitter-base voltage open collector −−5V
collector current (DC) −−100 mA
peak collector current −−200 mA
peak base current −−100 mA
total power dissipation T
≤ 25 °C; note 1 − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 May 21 3
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