Philips BC857BT, BC857CT, BC856BT, BC857AT, BC856AT Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D173
BC856T; BC857T
PNP general purpose transistors
Product specification
Supersedes data of 1997 Jul 07
1999 Apr 26
Philips Semiconductors Product specification
PNP general purpose transistors BC856T; BC857T
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 65 V).
APPLICATIONS
• General purpose switching and amplification especially
in portable equipment.
DESCRIPTION
PNP transistor in an SC-75 plastic package.
NPN complements: BC846T and BC847T.
MARKING
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
BC856AT 3A BC857BT 3F
BC856BT 3B BC857CT 3G
BC857AT 3E
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
12
Top view
3
Fig.1 Simplified outline (SC-75) and symbol.
3
1
2
MAM362
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
BC856AT; BC856BT −−80 V
BC857AT; BC857BT; BC857CT −−50 V
V
CEO
collector-emitter voltage open base
BC856AT; BC856BT −−65 V
BC857AT; BC857BT; BC857CT −−45 V
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
emitter-base voltage open collector −−5V
collector current (DC) −−100 mA
peak collector current −−200 mA
peak base current −−100 mA
total power dissipation T
≤ 25 °C; note 1 − 150 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 26 2
Philips Semiconductors Product specification
PNP general purpose transistors BC856T; BC857T
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BE
C
c
C
e
f
T
F noise figure I
thermal resistance from junction to ambient note 1 833 K/W
collector cut-off current IE= 0; VCB= −30 V −−−15 nA
I
= 0; VCB= −30 V; Tj= 150 °C −−−5µA
E
emitter cut-off current IC= 0; VEB= −5V −−−100 nA
DC current gain IC= −2 mA; VCE= −5V
BC856AT; BC857AT 125 − 250
BC856BT; BC857BT 220 − 475
BC857CT 420 − 800
collector-emitter saturation voltage IC= −10 mA; IB= −0.5 mA −−−200 mV
I
= −100 mA; IB= −5 mA; note 1 −−−400 mV
C
base-emitter voltage IC= −2 mA; VCE= −5V −600 −−750 mV
I
= −10 mA; VCE= −5V −−−820 mV
C
collector capacitance IE=ie= 0; VCB= −10 V; f = 1 MHz −−2.5 pF
emitter capacitance IC=ic= 0; VEB= −500 mV; f = 1 MHz − 10 − pF
transition frequency IC= −10 mA; VCE= −5 V; f = 100 MHz 100 −−MHz
= −200 µA; VCE= −5 V; RS=2kΩ;
C
−−10 dB
f = 1 kHz; B = 220 Hz
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
1999 Apr 26 3
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