Philips BC847BW, BC847W, BC847CW, BC846AW, BC847AW Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D102
BC846W; BC847W
NPN general purpose transistors
Product specification
Supersedes data of 1997 Mar 27
1999 Apr 23
Philips Semiconductors Product specification
NPN general purpose transistors BC846W; BC847W
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 65 V).
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
NPN transistor in a SC70; SOT323 plastic package.
PNP complements: BC856W and BC857W.
MARKING
TYPE
NUMBER
MARKING
(1)
CODE
TYPE
NUMBER
MARKING
CODE
BC846W 1D∗ BC847AW 1E∗
BC846AW 1A∗ BC847BW 1F∗
BC846BW 1B∗ BC847CW 1G∗
BC847W 1H∗
Note
1. ∗ = - : Made in Hong Kong.
∗ = t : Made in Malaysia.
(1)
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
3
1
2
MAM062
Fig.1 Simplified outline (SC70; SOT323)
and symbol.
3
1
2
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
BC846W − 80 V
BC847W − 50 V
V
CEO
collector-emitter voltage open base
BC846W − 65 V
BC847W − 45 V
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
emitter-base voltage open collector − 5V
collector current (DC) − 100 mA
peak collector current − 200 mA
peak base current − 200 mA
total power dissipation T
≤ 25 °C; note 1 − 200 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 23 2
Philips Semiconductors Product specification
NPN general purpose transistors BC846W; BC847W
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
V
BE
C
c
f
T
F noise figure I
thermal resistance from junction to ambient note 1 625 K/W
collector cut-off current IE= 0; VCB=30V −−15 nA
I
= 0; VCB=30V; Tj= 150 °C −−5µA
E
emitter cut-off current IC= 0; VEB=5V −−100 nA
DC current gain IC= 2 mA; VCE=5V;
BC846W 110 − 450
see Figs 2, 3 and 4
BC847W 110 − 800
BC846AW; BC847AW 110 − 220
BC846BW; BC847BW 200 − 450
BC847CW 420 − 800
collector-emitter saturation voltage IC= 10 mA; IB= 0.5 mA −−250 mV
I
= 100 mA; IB= 5 mA; note 1 −−600 mV
C
base-emitter saturation voltage IC= 10 mA; IB= 0.5 mA − 700 − mV
I
= 100 mA; IB=5mA − 900 − mV
C
base-emitter voltage IC= 2 mA; VCE= 5 V 580 − 700 mV
I
= 10 mA; VCE=5V −−770 mV
C
collector capacitance IE=ie= 0; VCB= 10 V; f = 1 MHz −−3pF
transition frequency IC= 10 mA; VCE= 5 V; f = 100 MHz 100 −−MHz
= 200 µA; VCE=5V; RS=2kΩ;
C
−−10 dB
f = 1 kHz; B = 200 Hz
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
1999 Apr 23 3
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