Philips BC847BPN Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ndbook, halfpage
MBD128
BC847BPN
NPN/PNP general purpose
transistor
Preliminary specification
Supersedes data of 1997 Jul 09
1999 Apr 26
Philips Semiconductors Preliminary specification
NPN/PNP general purpose transistor BC847BPN
FEATURES
• Low collector capacitance
• Low collector-emitter saturation voltage
• Closely matched current gain
• Reduces number of components and boardspace
PINNING
PIN DESCRIPTION
1, 4 emitter TR1; TR2
2, 5 base TR1; TR2
6, 3 collector TR1; TR2
• No mutual interference between the transistors.
APPLICATIONS
• General purpose switching and amplification.
handbook, halfpage
DESCRIPTION
NPN/PNP transistor pair in an SC-88; SOT363 plastic
package.
MARKING
TYPE NUMBER MARKING CODE
Fig.1 Simplified outline (SC-88; SOT363)
BC847BPN 13t
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
132
Top view
and symbol.
56
4
MAM341
645
TR2
TR1
132
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per transistor; for the PNP transistor with negative polarity
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 50 V
collector-emitter voltage open base − 45 V
emitter-base voltage open collector − 5V
collector current (DC) − 100 mA
peak collector current − 200 mA
peak base current − 200 mA
total power dissipation T
≤ 25 °C − 200 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Per device
P
tot
total power dissipation T
≤ 25 °C; note 1 − 300 mW
amb
Note
1. Device mounted on an FR4 printed-circuit board.
1999 Apr 26 2
Philips Semiconductors Preliminary specification
NPN/PNP general purpose transistor BC847BPN
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Per device
R
th j-a
Note
1. Device mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Per transistor unless otherwise specified; for the PNP transistor with negative polarity
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
V
BE
C
c
C
e
f
T
thermal resistance from junction to ambient note 1 416 K/W
collector cut-off current IE= 0; VCB=30V −−15 nA
I
= 0; VCB=30V; Tj= 150 °C −−5µA
E
emitter cut-off current IC= 0; VEB=5V −−100 nA
DC current gain IC= 2 mA; VCE= 5 V 200 − 450
collector-emitter saturation
voltage
IC= 10 mA; IB= 0.5 mA −−100 mV
I
= 100 mA; IB= 5 mA; note 1 −−300 mV
C
base-emitter saturation voltage IC= 10 mA; IB= 0.5 mA − 755 − mV
base-emitter voltage IC= 2 mA; VCE=5V
TR1 NPN 580 655 700 mV
TR2 PNP 600 655 750 mV
collector capacitance IE=ie= 0; VCB= 10 V; f = 1 MHz
TR1 NPN −−1.5 pF
TR2 PNP −−2.2 pF
emitter capacitance IC=ic= 0; VEB= 500 mV; f = 1 MHz
TR1 NPN − 11 − pF
TR2 PNP − 10 − pF
transition frequency IC= 10 mA; VCE= 5 V; f = 100 MHz 100 −−MHz
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
1999 Apr 26 3
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