Philips BC847BT, BC847CT, BC846AT, BC847AT, BC846BT Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D173
BC846T; BC847T
NPN general purpose transistors
Preliminary specification
Supersedes data of 1997 Jul 07
1999 Apr 26
Philips Semiconductors Preliminary specification
NPN general purpose transistors BC846T; BC847T
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 65 V).
APPLICATIONS
• General purpose switching and amplification, especially
in portable communication equipment
• Electronic data processing (EDP) and consumer
applications.
DESCRIPTION
NPN transistor in an SC-75 plastic package.
PNP complements: BC856T and BC857T.
MARKING
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
BC846AT 1A BC847BT 1F
BC846BT 1B BC847CT 1G
BC847AT 1E
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
12
Top view
3
Fig.1 Simplified outline (SC-75) and symbol.
3
1
2
MAM348
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
BC846AT; BC846BT − 80 V
BC847AT; BC847BT; BC847CT − 50 V
V
CEO
collector-emitter voltage open base
BC846AT; BC846BT − 65 V
BC847AT; BC847BT; BC847CT − 45 V
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
emitter-base voltage open collector − 5V
collector current (DC) − 100 mA
peak collector current − 200 mA
peak base current − 100 mA
total power dissipation T
≤ 25 °C; note 1 − 150 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 26 2
Philips Semiconductors Preliminary specification
NPN general purpose transistors BC846T; BC847T
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BE
C
c
C
e
f
T
F noise figure I
thermal resistance from junction to ambient note1 833 K/W
collector cut-off current IE= 0; VCB=30V −−15 nA
I
= 0; VCB= 30 V; Tj= 150 °C −−5µA
E
emitter cut-off current IC= 0; VEB=5V −−100 nA
DC current gain IC= 2 mA; VCE=5V
BC846AT; BC847AT 110 − 220
BC846BT; BC847BT 200 − 450
BC847CT 420 − 800
collector-emitter saturation
voltage
IC= 10 mA; IB= 0.5 mA −−200 mV
I
= 100 mA; IB= 5 mA; note 1 −−400 mV
C
base-emitter voltage IC= 2 mA; VCE= 5 V 580 − 700 mV
I
= 10 mA; VCE=5V −−770 mV
C
collector capacitance IE=ie= 0; VCB= 10 V; f = 1 MHz −−1.5 pF
emitter capacitance IC=ic= 0; VEB= 500 mV; f = 1 MHz − 11 − pF
transition frequency IC= 10 mA; VCE= 5 V; f = 100 MHz 100 −−MHz
= 200 µA; VCE=5V; RS=2kΩ;
C
−−10 dB
f = 1 kHz; B = 200 Hz
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
1999 Apr 26 3
Loading...