Philips BC817DS Technical data
BC817DS
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D302
BC817DS
NPN general purpose double transistor
Product specification |
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2002 Nov 22 |
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Supersedes data of 2002 Aug 09 |
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Philips Semiconductors |
Product specification |
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NPN general purpose double transistor |
BC817DS |
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FEATURES
∙High current (500 mA)
∙600 mW total power dissipation
∙Replaces two SOT23 packaged transistors on same PCB area.
APPLICATIONS
∙General purpose switching and amplification
∙Push-pull amplifiers
∙Multi-phase stepper motor drivers.
DESCRIPTION
NPN transistor pair in a SOT457 (SC-74) plastic package.
MARKING
TYPE NUMBER |
MARKING CODE |
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BC817DS |
N3 |
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QUICK REFERENCE DATA
SYMBOL |
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PARAMETER |
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MAX. |
UNIT |
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VCEO |
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collector-emitter voltage |
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45 |
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V |
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IC |
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collector current (DC) |
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500 |
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mA |
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ICM |
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peak collector current |
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1 |
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A |
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PINNING |
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PIN |
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DESCRIPTION |
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1, 4 |
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emitter |
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TR1; TR2 |
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2, 5 |
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base |
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TR1; TR2 |
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6, 3 |
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collector |
TR1; TR2 |
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handbook, halfpage |
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4 |
6 |
5 |
4 |
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6 |
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5 |
TR1 |
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TR2 |
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1 |
2 |
3 |
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Top view |
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1 |
2 |
3 |
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MAM340 |
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Fig.1 Simplified outline (SOT457) and symbol. |
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LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL |
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PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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Per transistor unless otherwise specified |
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VCBO |
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collector-base voltage |
open emitter |
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50 |
V |
VCEO |
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collector-emitter voltage |
open base |
− |
45 |
V |
VEBO |
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emitter-base voltage |
open collector |
− |
5 |
V |
IC |
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collector current (DC) |
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500 |
mA |
ICM |
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peak collector current |
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1 |
A |
IBM |
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peak base current |
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− |
200 |
mA |
Ptot |
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total power dissipation |
Tamb ≤ 25 °C; note 1 |
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370 |
mW |
Tstg |
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storage temperature |
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−65 |
+150 |
°C |
Tj |
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junction temperature |
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150 |
°C |
Tamb |
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operating ambient temperature |
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−65 |
+150 |
°C |
Per device |
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Ptot |
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total power dissipation |
Tamb ≤ 25 °C; note 1 |
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600 |
mW |
Note
1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2.
2002 Nov 22 |
2 |
Philips Semiconductors |
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Product specification |
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NPN general purpose double transistor |
BC817DS |
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THERMAL CHARACTERISTICS |
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SYMBOL |
PARAMETER |
CONDITIONS |
VALUE |
UNIT |
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Rth j-a |
thermal resistance from junction to |
note 1 |
208 |
K/W |
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ambient |
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Note |
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1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL |
PARAMETER |
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CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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Per transistor |
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ICBO |
collector-base cut-off current |
VCB = 20 |
V; IE = 0 |
− |
− |
100 |
nA |
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VCB = 20 |
V; IE = 0; Tj = 150 °C |
− |
− |
5 |
μA |
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IEBO |
emitter-base cut-off current |
VEB = 5 V; IC = 0 |
− |
− |
100 |
nA |
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hFE |
DC current gain |
VCE = 1 |
V; IC = 100 mA; note 1 |
160 |
− |
400 |
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VCE = 1 |
V; IC = 500 mA; note 1 |
40 |
− |
− |
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VCEsat |
collector-emitter saturation voltage |
IC = 500 mA; IB = 50 mA; note 1 |
− |
− |
700 |
mV |
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VBE |
base-emitter voltage |
VCE = 1 V; IC = 500 mA; |
− |
− |
1.2 |
V |
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notes 1 and 2 |
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Cc |
collector capacitance |
VCB = 10 |
V; IE = Ie = 0; f = 1 MHz |
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5 |
− |
pF |
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fT |
transition frequency |
VCE = 5 |
V; IC = 10 mA; |
100 |
− |
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MHz |
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f = 100 MHz |
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Notes
1.Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
2.VBE decreases by approximately −2 mV/K with increasing temperature.
2002 Nov 22 |
3 |
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