Philips BC817DPN Technical data
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ook, halfpage
M3D302
BC817DPN
NPN/PNP general purpose
transistor
Product specification
Supersedes data of 2002 Aug 09
2002 Nov 22
Philips Semiconductors Product specification
NPN/PNP general purpose transistor BC817DPN
FEATURES
• High current (500 mA)
• 600 mW total power dissipation
• Replaces two SOT23 packaged transistors on same
PCB area.
APPLICATIONS
• General purpose switching and amplification
• Complementary driver
• Half and full bridge driver.
DESCRIPTION
NPN/PNP transistor pair in a SOT457 (SC-74) plastic
package.
MARKING
TYPE NUMBER MARKING CODE
BC817DPN N4
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. UNIT
V
I
I
CEO
C
CM
collector-emitter voltage 45 V
collector current (DC) 500 mA
peak collector current 1 A
PINNING
PIN DESCRIPTION
1, 4 emitter TR1; TR2
2, 5 base TR1; TR2
6, 3 collector TR1; TR2
handbook, halfpage
Top view
654
123
MAM445
645
TR2
TR1
132
Fig.1 Simplified outline (SOT457) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per transistor; for the PNP transistor with negative polarity
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 50 V
collector-emitter voltage open base − 45 V
emitter-base voltage open collector − 5V
collector current (DC) − 500 mA
peak collector current − 1A
peak base current − 200 mA
total power dissipation T
≤ 25 °C; note 1 − 370 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Per device
P
tot
total power dissipation T
≤ 25 °C; note 1 − 600 mW
amb
Note
1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2.
2002 Nov 22 2
Philips Semiconductors Product specification
NPN/PNP general purpose transistor BC817DPN
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistancefromjunction to
ambient
Note
1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm
CHARACTERISTICS
T
=25°C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Per transistor unless otherwise specified; for the PNP transistor with negative polarity
I
CBO
I
EBO
h
FE
V
CEsat
V
BE
collector-base cut-off current VCB= 20 V; IE=0 −−100 nA
emitter-base cut-off current VEB=5V; IC=0 −−100 nA
DC current gain VCE=1V; IC= 100 mA; note 1 160 − 400
collector-emitter saturation voltage IC= 500 mA; IB= 50 mA; note 1 −−700 mV
base-emitter voltage VCE=1V; IC= 500 mA;
NPN transistor
C
c
f
T
collector capacitance VCB= 10 V; IE=Ie= 0; f = 1 MHz − 5 − pF
transition frequency VCE=5V; IC= 10 mA;
PNP transistor
C
c
f
T
collector capacitance VCB= −10 V; IE=Ie= 0; f = 1 MHz − 9 − pF
transition frequency VCE= −5 V; IC= −10 mA;
note 1 208 K/W
2
.
= 20 V; IE= 0; Tj= 150 °C −−5µA
V
CB
V
=1V; IC= 500 mA; note 1 40 −−
CE
−−1.2 V
notes 1 and 2
100 −−MHz
f = 100 MHz
80 −−MHz
f = 100 MHz
Notes
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
2. VBE decreases by approximately −2 mV/K with increasing temperature.
2002 Nov 22 3
Philips Semiconductors Product specification
NPN/PNP general purpose transistor BC817DPN
500
handbook, halfpage
h
FE
400
(1)
MBL747
300
(2)
200
(3)
100
0
−1
10
TR1 (NPN) V
(1) T
(2) T
(3) T
amb
amb
amb
= 150 °C.
=25°C.
= −55 °C.
11010
=1V.
CE
2
I
(mA)
C
Fig.2 DC current gain as a function of collector
current; typical values.
1000
handbook, halfpage
I
C
(1) (2) (3) (4) (5)
MBL748
(mA)
800
600
400
(6)
(7)
(8)
(9)
(10)
200
3
10
0
010
2468
VCE (V)
TR1 (NPN)
(1) IB= 15 mA.
(2) IB= 13.5 mA.
(3) IB= 12 mA.
(4) IB= 10.5 mA.
(5) IB= 9 mA.
(6) IB= 7.5 mA.
(7) IB= 6 mA.
(8) IB= 4.5 mA.
(9) IB= 3 mA.
(10) IB= 1.5 mA.
Fig.3 Collector current as a function of
collector-emitter voltage; typical values.
2002 Nov 22 4
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