Philips BC817DPN Technical data

查询BC817DPN供应商查询BC817DPN供应商

DISCRETE SEMICONDUCTORS

DATA SH EET

ook, halfpage

M3D302

BC817DPN

NPN/PNP general purpose
transistor

Product specification
Supersedes data of 2002 Aug 09

2002 Nov 22

Philips Semiconductors Product specification

NPN/PNP general purpose transistor BC817DPN

FEATURES

• High current (500 mA)

• 600 mW total power dissipation

• Replaces two SOT23 packaged transistors on same

PCB area.

APPLICATIONS

• General purpose switching and amplification

• Complementary driver

• Half and full bridge driver.

DESCRIPTION

NPN/PNP transistor pair in a SOT457 (SC-74) plastic
package.

MARKING

TYPE NUMBER MARKING CODE

BC817DPN N4

QUICK REFERENCE DATA

SYMBOL PARAMETER MAX. UNIT

V
I
I

CEO
C
CM

collector-emitter voltage 45 V
collector current (DC) 500 mA
peak collector current 1 A

PINNING

PIN DESCRIPTION

1, 4 emitter TR1; TR2
2, 5 base TR1; TR2
6, 3 collector TR1; TR2

handbook, halfpage

Top view

654

123

MAM445

645

TR2

TR1

132

Fig.1 Simplified outline (SOT457) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Per transistor; for the PNP transistor with negative polarity

V

CBO

V

CEO

V

EBO

I

C

I

CM

I

BM

P

tot

T

stg

T

j

T

amb

collector-base voltage open emitter − 50 V
collector-emitter voltage open base − 45 V
emitter-base voltage open collector − 5V
collector current (DC) − 500 mA
peak collector current − 1A
peak base current − 200 mA
total power dissipation T

≤ 25 °C; note 1 − 370 mW

amb

storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C

Per device

P

tot

total power dissipation T

≤ 25 °C; note 1 − 600 mW

amb

Note

1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2.

2002 Nov 22 2

Philips Semiconductors Product specification

NPN/PNP general purpose transistor BC817DPN

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-a

thermal resistancefromjunction to
ambient

Note

1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm

CHARACTERISTICS

T

=25°C unless otherwise specified.

amb

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Per transistor unless otherwise specified; for the PNP transistor with negative polarity

I

CBO

I

EBO

h

FE

V

CEsat

V

BE

collector-base cut-off current VCB= 20 V; IE=0 −−100 nA

emitter-base cut-off current VEB=5V; IC=0 −−100 nA
DC current gain VCE=1V; IC= 100 mA; note 1 160 − 400

collector-emitter saturation voltage IC= 500 mA; IB= 50 mA; note 1 −−700 mV
base-emitter voltage VCE=1V; IC= 500 mA;

NPN transistor

C

c

f

T

collector capacitance VCB= 10 V; IE=Ie= 0; f = 1 MHz − 5 − pF
transition frequency VCE=5V; IC= 10 mA;

PNP transistor

C

c

f

T

collector capacitance VCB= −10 V; IE=Ie= 0; f = 1 MHz − 9 − pF
transition frequency VCE= −5 V; IC= −10 mA;

note 1 208 K/W

2

.

= 20 V; IE= 0; Tj= 150 °C −−5µA

V

CB

V

=1V; IC= 500 mA; note 1 40 −−

CE

−−1.2 V

notes 1 and 2

100 −−MHz

f = 100 MHz

80 −−MHz

f = 100 MHz

Notes

1. Pulse test: t

≤ 300 µs; δ≤0.02.

p

2. VBE decreases by approximately −2 mV/K with increasing temperature.

2002 Nov 22 3

Philips Semiconductors Product specification

NPN/PNP general purpose transistor BC817DPN

500

handbook, halfpage

h

FE
400

(1)

MBL747

300

(2)

200

(3)

100

0

−1

10

TR1 (NPN) V
(1) T

(2) T
(3) T

amb
amb
amb

= 150 °C.
=25°C.
= −55 °C.

11010

=1V.

CE

2

I

(mA)

C

Fig.2 DC current gain as a function of collector

current; typical values.

1000

handbook, halfpage

I

C

(1) (2) (3) (4) (5)

MBL748

(mA)

800

600

400

(6)
(7)

(8)
(9)

(10)

200

3

10

0

010

2468

VCE (V)

TR1 (NPN)

(1) IB= 15 mA.
(2) IB= 13.5 mA.
(3) IB= 12 mA.
(4) IB= 10.5 mA.

(5) IB= 9 mA.
(6) IB= 7.5 mA.
(7) IB= 6 mA.
(8) IB= 4.5 mA.

(9) IB= 3 mA.
(10) IB= 1.5 mA.

Fig.3 Collector current as a function of

collector-emitter voltage; typical values.

2002 Nov 22 4

Philips Semiconductors Product specification

NPN/PNP general purpose transistor BC817DPN

3

10

handbook, halfpage

V

CEsat

MBL749

(mV)

2

10

(1)

(2)
(3)

10

−1

10

TR1 (NPN) I
(1) T

(2) T
(3) T

amb
amb
amb

= 150 °C.
=25°C.
= −55 °C.

110

= 10.

C/IB

2

10

I

(mA)

C

Fig.4 Collector-emitter saturation voltage as a

function of collector current; typical values.

1200

handbook, halfpage

V

BE

MBL750

(mV)

1000

(1)

800

(2)

600

(3)

400

3

10

200

−1

10

TR1 (NPN) V
(1) T

(2) T
(3) T

amb
amb
amb

= −55 °C.
=25°C.
= 150 °C.

110

=1V.

CE

2

10

I

C

(mA)

3

10

Fig.5 Base-emitter voltage as a function of

collector current; typical values.

2002 Nov 22 5

Philips Semiconductors Product specification

NPN/PNP general purpose transistor BC817DPN

600

handbook, halfpage

h

FE

500

(1)

MHC324

400

300

(2)

200

(3)

100

0

−10

−1

−1 −10

−10

2

IC (mA)

TR2 (PNP) V
(1) T

amb

(2) T

amb

(3) T

amb

= −1V.

CE

= 150 °C.
=25°C.
= −55 °C.

Fig.6 DC current gain as a function of collector

current; typical values.

−10

−1000

handbook, halfpage

I

C

(mA)

−800

−600

(1)
(2)
(3)

(4)
(5)
(6)

(7)

(8)

MHC325

−400

(9)

−200

3

0

0 −10

−2

−4 −6 −8

(10)

VCE (V)

TR2 (PNP)

(1) IB= −7 mA.
(2) IB= −6.3 mA.
(3) IB= −5.6 mA.
(4) IB= −4.9 mA.

(5) IB= −4.2 mA.
(6) IB= −3.5 mA.
(7) IB= −2.8 mA.
(8) IB= −2.1 mA.

(9) IB= −1.4 mA.
(10) IB= −0.7 mA.

Fig.7 Collector current as a function of

collector-emitter voltage; typical values.

2002 Nov 22 6

Philips Semiconductors Product specification

NPN/PNP general purpose transistor BC817DPN

−10

MHC326

2

3

−10

handbook, halfpage

V

CEsat
(mV)

2

−10

−10

−1

−1

−10

−1 −10

(1)
(2)

(3)

IC (mA)

TR2 (PNP) I
(1) T

amb

(2) T

amb

(3) T

amb

= 10.

C/IB

= 150 °C.
=25°C.
= −55 °C.

Fig.8 Collector-emitter saturation voltage as a

function of collector current; typical values.

−10

−1200

handbook, halfpage

V

BE

(mV)

MHC327

−1000

−800

−600

−400

−200

3

−10

−1

(1)

(2)

(3)

−1 −10

−10

2

−10

3

IC (mA)

TR2 (PNP) V
(1) T

amb

(2) T

amb

(3) T

amb

= −1V.

CE

= −55 °C.
=25°C.
= 150 °C.

Fig.9 Base-emitter voltage as a function of

collector current; typical values.

2002 Nov 22 7

Philips Semiconductors Product specification

NPN/PNP general purpose transistor BC817DPN

PACKAGE OUTLINE

Plastic surface mounted package; 6 leads SOT457

D

y

56

pin 1
index

4

A

A

1

E

H

E

Q

AB

c

X

v M

A

132

L

p

e

b

p

wBM

detail X

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

A

UNIT

A

1.1

mm

OUTLINE
VERSION

SOT457 SC-74

0.9

0.013

0.1

b

cD

p

1

0.40

0.26

0.25

0.10

IEC JEDEC EIAJ

3.1

2.7

E

1.7

1.3

REFERENCES

e

0.95

H

E

3.0

2.5

2002 Nov 22 8

L

Qywv

p

0.6

0.33

0.2

0.23

0.2 0.10.2

EUROPEAN

PROJECTION

ISSUE DATE

97-02-28
01-05-04

Philips Semiconductors Product specification

NPN/PNP general purpose transistor BC817DPN

DATA SHEET STATUS

LEVEL

DATA SHEET

STATUS

(1)

PRODUCT

STATUS

(2)(3)

DEFINITION

I Objective data Development This data sheet contains data from the objective specification for product

development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.

II Preliminary data Qualification This data sheet contains data from the preliminary specification.

Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.

III Product data Production This data sheet contains data from the product specification. Philips

Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

3. For data sheets describing multiple type numbers, thehighest-level productstatus determinesthe datasheet status.

DEFINITIONS

DISCLAIMERS

Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.

Limiting values definition  Limiting valuesgiven arein
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
atthese or atanyother conditions abovethosegiven in the
Characteristics sectionsof the specificationis not implied.
Exposure to limiting values for extended periods may
affect device reliability.

Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationor warranty thatsuchapplicationswill be
suitable for the specified use without further testing or
modification.

Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expectedto resultin personal injury.Philips
Semiconductorscustomersusing or sellingtheseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes  Philips Semiconductors
reserves the right to make changes in the products ­including circuits, standard cells, and/or software ­described or contained herein in order to improve design
and/or performance. When the productis infull production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.

2002 Nov 22 9

Philips Semiconductors Product specification

NPN/PNP general purpose transistor BC817DPN

NOTES

2002 Nov 22 10

Philips Semiconductors Product specification

NPN/PNP general purpose transistor BC817DPN

NOTES

2002 Nov 22 11

Philips Semiconductors – a w orldwide compan y

Contact information

For additional information please visit http://www.semiconductors.philips.com. Fax: [phone]
For sales offices addresses send e-mail to: [e-mail].

© Koninklijke Philips Electronics N.V. 2002
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Printed in The Netherlands 613514/02/pp12 Date of release: 2002 Nov 22 Document order number: 9397 750 10583

SCA74