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DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D187
BC807W
PNP general purpose transistor
Product specification
Supersedes data of 1997 Jun 09
1999 May 18
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Philips Semiconductors Product specification
PNP general purpose transistor BC807W
FEATURES
• High current (max. 500 mA)
• Low voltage (max. 45 V).
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
PNP transistor in a SOT323 plastic package.
NPN complement: BC817W.
MARKING
TYPE
NUMBER
MARKING
(1)
CODE
TYPE
NUMBER
MARKING
CODE
BC807W 5D∗ BC807-25W 5B∗
BC807-16W 5A∗ BC807-40W 5C∗
Note
1. ∗ = - : Made in Hong Kong.
∗ = t : Made in Malaysia.
(1)
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
3
1
1
2
MAM048
Fig.1 Simplified outline (SOT323) and symbol.
3
2
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter −−50 V
collector-emitter voltage open base; IC= −10 mA −−45 V
emitter-base voltage open collector −−5V
collector current (DC) −−500 mA
peak collector current −−1A
peak base current −−200 mA
total power dissipation T
≤ 25 °C; note 1 − 200 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 May 18 2
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Philips Semiconductors Product specification
PNP general purpose transistor BC807W
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BE
C
c
f
T
thermal resistance from junction to ambient note 1 625 K/W
collector cut-off current IE= 0; VCB= −20 V −−100 nA
I
= 0; VCB= −20 V; Tj= 150 °C −−5µA
E
emitter cut-off current IC= 0; VEB= −5V −−100 nA
DC current gain IC= −100 mA; VCE= −1 V; note 1;
BC807W 100 600
see Figs 2, 3 and 4
BC807-16W 100 250
BC807-25W 160 400
BC807-40W 250 600
DC current gain I
collector-emitter saturation
= −500 mA; VCE= −1 V; note 1 40 −
C
IC= −500 mA; IB= −50 mA; note 1 −−700 mV
voltage
base-emitter voltage IC= −500 mA; VCE= −1 V; note 1 −−1.2 V
collector capacitance IE=ie= 0; VCB= −10 V; f = 1 MHz − 10 pF
transition frequency IC= −10 mA; VCE= −5 V; f = 100 MHz 80 − MHz
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
1999 May 18 3