Philips BC807DS Technical data
BC807DS
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D302
BC807DS
PNP general purpose double transistor
Product specification |
|
2002 Nov 22 |
|||||
Supersedes data of 2002 Aug 09 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Philips Semiconductors |
Product specification |
|
|
PNP general purpose double transistor |
BC807DS |
|
|
|
|
FEATURES
∙High current (500 mA)
∙600 mW total power dissipation
∙Replaces two SOT23 packaged transistors on same PCB area.
APPLICATIONS
∙General purpose switching and amplification
∙Push-pull amplifiers
∙Multi-phase stepper motor drivers.
DESCRIPTION
PNP transistor pair in a SOT457 (SC-74) plastic package.
MARKING
TYPE NUMBER |
MARKING CODE |
|
|
BC807DS |
N2 |
|
|
QUICK REFERENCE DATA
SYMBOL |
|
|
|
|
PARAMETER |
MAX. |
|
UNIT |
||||||
|
|
|
|
|
|
|||||||||
VCEO |
|
collector-emitter voltage |
−45 |
|
V |
|||||||||
IC |
|
collector current (DC) |
−500 |
|
mA |
|||||||||
ICM |
|
peak collector current |
−1 |
|
A |
|||||||||
PINNING |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
PIN |
|
|
|
|
|
|
|
DESCRIPTION |
|
|
||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
1, 4 |
|
|
emitter |
|
|
TR1; TR2 |
|
|
|
|
|
|||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
2, 5 |
|
|
base |
|
|
TR1; TR2 |
|
|
|
|
|
|||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
6, 3 |
|
|
collector |
|
|
TR1; TR2 |
|
|
|
|
|
|||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||
|
|
6 |
5 |
|
4 |
|
6 |
5 |
|
4 |
||||
|
|
|
|
|
|
|
|
|
TR1 |
|
|
|
TR2 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|||
|
|
|
|
|
|
|
|
|
|
|
|
|||
|
|
|
|
|
|
|
|
|
|
|
|
|||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
1 |
|
2 |
|
3 |
|
1 |
2 |
|
3 |
||
Top view |
|
|
MAM457 |
|
|
|
|
|
||||||
Fig.1 |
Simplified outline (SOT457) and symbol. |
|||||||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL |
|
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
|
|
|
|
|
|
|
Per transistor unless otherwise specified |
|
|
|
|
||
|
|
|
|
|
|
|
VCBO |
|
collector-base voltage |
open emitter |
− |
−50 |
V |
VCEO |
|
collector-emitter voltage |
open base |
− |
−45 |
V |
VEBO |
|
emitter-base voltage |
open collector |
− |
−5 |
V |
IC |
|
collector current (DC) |
|
− |
−500 |
mA |
ICM |
|
peak collector current |
|
− |
−1 |
A |
IBM |
|
peak base current |
|
− |
−200 |
mA |
Ptot |
|
total power dissipation |
Tamb ≤ 25 °C; note 1 |
− |
370 |
mW |
Tstg |
|
storage temperature |
|
−65 |
+150 |
°C |
Tj |
|
junction temperature |
|
− |
150 |
°C |
Tamb |
|
operating ambient temperature |
|
−65 |
+150 |
°C |
Per device |
|
|
|
|
|
|
|
|
|
|
|
|
|
Ptot |
|
total power dissipation |
Tamb ≤ 25 °C; note 1 |
− |
600 |
mW |
Note
1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2.
2002 Nov 22 |
2 |
Philips Semiconductors |
|
Product specification |
||
|
|
|
|
|
PNP general purpose double transistor |
BC807DS |
|||
|
|
|
|
|
THERMAL CHARACTERISTICS |
|
|
|
|
|
|
|
|
|
SYMBOL |
PARAMETER |
CONDITIONS |
VALUE |
UNIT |
|
|
|
|
|
Rth j-a |
thermal resistance from junction to |
note 1 |
208 |
K/W |
|
ambient |
|
|
|
|
|
|
|
|
Note |
|
|
|
|
1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL |
PARAMETER |
|
|
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
|
|
|
|
|
|
|
|
|
Per transistor |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
ICBO |
collector-base cut-off current |
VCB = −20 |
V; IE = 0 |
− |
− |
−100 |
nA |
|
|
|
VCB = −20 |
V; IE = 0; Tj = 150 °C |
− |
− |
−5 |
μA |
|
IEBO |
emitter-base cut-off current |
VEB = −5 V; IC = 0 |
− |
− |
−100 |
nA |
||
hFE |
DC current gain |
VCE = −1 |
V; IC = −100 mA; note 1 |
160 |
− |
400 |
|
|
|
|
VCE = −1 |
V; IC = −500 mA; note 1 |
40 |
− |
− |
|
|
VCEsat |
collector-emitter saturation voltage |
IC = −500 mA; IB = −50 mA; note 1 |
− |
− |
−700 |
mV |
||
VBE |
base-emitter voltage |
VCE = −1 V; IC = −500 mA; |
− |
− |
−1.2 |
V |
||
|
|
notes 1 and 2 |
|
|
|
|
||
|
|
|
|
|
|
|
|
|
Cc |
collector capacitance |
VCB = −10 |
V; IE = Ie = 0; f = 1 MHz |
− |
9 |
− |
pF |
|
fT |
transition frequency |
VCE = −5 |
V; IC = −10 mA; |
80 |
− |
− |
MHz |
|
|
|
f = 100 MHz |
|
|
|
|
||
|
|
|
|
|
|
|
|
|
Notes
1.Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
2.VBE decreases by approximately −2 mV/K with increasing temperature.
2002 Nov 22 |
3 |
Loading...