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DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D088
BC807
PNP general purpose transistor
Product specification
Supersedes data of 1997 Feb 28
1999 Apr 08
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Philips Semiconductors Product specification
PNP general purpose transistor BC807
FEATURES
• High current (max. 500 mA)
• Low voltage (max. 45 V).
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
PNP transistor in a SOT23 plastic package.
NPN complements: BC817.
MARKING
TYPE NUMBER MARKING CODE
(1)
BC807 5D∗
BC807-16 5A∗
BC807-25 5B∗
BC807-40 5C∗
Note
1. ∗ = p: Made in Hong Kong. ∗ = t: Made in Malaysia.
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
3
21
MAM256
Fig.1 Simplified outline (SOT23) and symbol.
3
1
2
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter −−50 V
collector-emitter voltage open base; IC= −10 mA −−45 V
emitter-base voltage open collector −−5V
collector current (DC) −−500 mA
peak collector current −−1A
peak base current −−200 mA
total power dissipation T
≤ 25 °C; note 1 − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 08 2
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Philips Semiconductors Product specification
PNP general purpose transistor BC807
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
h
FE
V
CEsat
V
BE
C
c
f
T
thermal resistance from junction to ambient note 1 500 K/W
collector cut-off current IE= 0; VCB= −20 V −−−100 nA
I
= 0; VCB= −20 V; Tj= 150 °C −−−5µA
E
emitter cut-off current IC= 0; VEB= −5V −−−100 nA
DC current gain IC= −100 mA; VCE= −1 V; note 1
BC807 100 − 600
see Figs 2, 3 and 4
BC807-16 100 − 250
BC807-25 160 − 400
BC807-40 250 − 600
DC current gain IC= −500 mA; VCE= −1 V; note 1 40 −−
collector-emitter saturation voltage IC= −500 mA; IB= −50 mA; note 1 −−−700 mV
base-emitter voltage IC= −500 mA; VCE= −1V;
−−−1.2 V
notes 1 and 2
collector capacitance IE=ie= 0; VCB= −10 V; f = 1 MHz − 9 − pF
transition frequency IC= −10 mA; VCE= −5 V; f = 100 MHz 80 −−MHz
Notes
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
2. VBE decreases by about −2 mV/K with increasing temperature.
1999 Apr 08 3