Philips BC807-16 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D088
BC807
PNP general purpose transistor
Product specification
Supersedes data of 1997 Feb 28
1999 Apr 08
Philips Semiconductors Product specification
PNP general purpose transistor BC807
FEATURES
• High current (max. 500 mA)
• Low voltage (max. 45 V).
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
PNP transistor in a SOT23 plastic package.
NPN complements: BC817.
MARKING
TYPE NUMBER MARKING CODE
(1)
BC807 5D∗
BC807-16 5A∗
BC807-25 5B∗
BC807-40 5C∗
Note
1. ∗ = p: Made in Hong Kong. ∗ = t: Made in Malaysia.
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
3
21
MAM256
Fig.1 Simplified outline (SOT23) and symbol.
3
1
2
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter −−50 V
collector-emitter voltage open base; IC= −10 mA −−45 V
emitter-base voltage open collector −−5V
collector current (DC) −−500 mA
peak collector current −−1A
peak base current −−200 mA
total power dissipation T
≤ 25 °C; note 1 − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 08 2
Philips Semiconductors Product specification
PNP general purpose transistor BC807
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
h
FE
V
CEsat
V
BE
C
c
f
T
thermal resistance from junction to ambient note 1 500 K/W
collector cut-off current IE= 0; VCB= −20 V −−−100 nA
I
= 0; VCB= −20 V; Tj= 150 °C −−−5µA
E
emitter cut-off current IC= 0; VEB= −5V −−−100 nA
DC current gain IC= −100 mA; VCE= −1 V; note 1
BC807 100 − 600
see Figs 2, 3 and 4
BC807-16 100 − 250
BC807-25 160 − 400
BC807-40 250 − 600
DC current gain IC= −500 mA; VCE= −1 V; note 1 40 −−
collector-emitter saturation voltage IC= −500 mA; IB= −50 mA; note 1 −−−700 mV
base-emitter voltage IC= −500 mA; VCE= −1V;
−−−1.2 V
notes 1 and 2
collector capacitance IE=ie= 0; VCB= −10 V; f = 1 MHz − 9 − pF
transition frequency IC= −10 mA; VCE= −5 V; f = 100 MHz 80 −−MHz
Notes
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
2. VBE decreases by about −2 mV/K with increasing temperature.
1999 Apr 08 3
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