Philips BC640, BC636-16, BC636-10, BC638-16, BC640-10 Datasheet
DATA SH EET
Product specification
Supersedes data of 1997 Mar 07
1999 Apr 23
DISCRETE SEMICONDUCTORS
BC636; BC638; BC640
PNP medium power transistors
ook, halfpage
M3D186
1999 Apr 23 2
Philips Semiconductors Product specification
PNP medium power transistors BC636; BC638; BC640
FEATURES
• High current (max. 1 A)
• Low voltage (max. 80 V).
APPLICATIONS
• Audio and video amplifiers.
DESCRIPTION
PNP medium power transistor in a TO-92; SOT54 plastic
package. NP complements: BC635, BC637 and BC639.
PINNING
PIN DESCRIPTION
1 base
2 collector
3 emitter
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
handbook, halfpage
1
3
2
MAM285
2
1
3
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
BC636 −−45 V
BC638 −−60 V
BC640 −−100 V
V
CEO
collector-emitter voltage open base
BC636 −−45 V
BC638 −−60 V
BC640 −−80 V
V
EBO
emitter-base voltage open collector −−5V
I
C
collector current (DC) −−1A
I
CM
peak collector current −−1.5 A
I
BM
peak base current −−200 mA
P
tot
total power dissipation T
amb
≤ 25 °C; note 1 − 0.83 W
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
operating ambient temperature −65 +150 °C
1999 Apr 23 3
Philips Semiconductors Product specification
PNP medium power transistors BC636; BC638; BC640
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
j
=25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 150 K/W
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
collector cut-off current IE= 0; VCB= −30 V −−100 nA
I
E
= 0; VCB= −30 V; Tj= 150 °C −−10 µA
I
EBO
emitter cut-off current IC= 0; VEB= −5V −−100 nA
h
FE
DC current gain VCE= −2 V; see Fig.2
I
C
= −5mA 40 −
I
C
=−150 mA 63 250
I
C
= −500 mA 25 −
DC current gain I
C
= −150 mA; VCE= −2 V; see Fig.2
BC636-10 63 160
BC636-16; BC638-16; BC640-16 100 250
V
CEsat
collector-emitter saturation voltage IC= −500 mA; IB= −50 mA −−0.5 V
V
BE
base-emitter voltage IC= −500 mA; VCE= −2V −−1V
f
T
transition frequency IC= −50 mA; VCE= −5 V; f = 100 MHz 100 − MHz
DC current gain ratio of the
complementary pairs
I
C
= 150 mA; VCE =2V − 1.6
h
FE1
h
FE2
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