DISCRETE SEMICONDUCTORS
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M3D049
BB155
Low-voltage variable capacitance
diode
Product specification
1996 Sep 20
Philips Semiconductors Product specification
Low-voltage variable capacitance diode BB155
FEATURES
• Very low capacitance spread
• Excellent linearity
• Low series resistance
• Very small plastic SMD package.
handbook, 4 columns
ka
MAM130
APPLICATIONS
• Voltage controlled oscillators
Marking code: PE.
Cathode side indicated by a bar.
(VCO), especially in mobile
communication equipment.
Fig.1 Simplified outline (SOD323) and symbol.
DESCRIPTION
LIMITING VALUES
The BB155 is a variable capacitance
diode, fabricated in planar
technology, and encapsulated in the
SOD323 very small plastic SMD
package.
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
R
I
F
T
stg
T
j
continuous reverse voltage
continuous forward current −
storage temperature
operating junction temperature
−
−55
−55
10 V
20 mA
+150 °C
+125 °C
ELECTRICAL CHARACTERISTICS
T
=25°C; unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
R
r
s
C
d
reverse current VR= 10 V; see Fig.3 −−
= 10 V; Tj=85°C; see Fig.3 −−
V
R
10
200
diode series resistance f = 100 MHz; note 1 − 0.35 0.6 Ω
diode capacitance VR= 0.34 V; f = 1 MHz; see Figs 2 and 4
V
= 2.82 V; f = 1 MHz; see Figs 2 and 4 24.55 − 26.7 pF
R
45.2
−
49.8 pF
nA
nA
Note
is the value at which Cd= 30 pF.
1. V
R
1996 Sep 20 2