Philips BB151 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

fpage

M3D049

BB151

Low-voltage variable
capacitance diode

Preliminary specification

1999 May 12

Philips Semiconductors Preliminary specification

Low-voltage variable capacitance diode BB151

FEATURES

• Very low capacitance spread

• Excellent linearity

• Very small plastic SMD package

PINNING

PIN DESCRIPTION

1 cathode
2 anode

• C3: 10.6 pF; ratio: 1.53

• Very low series resistance.

columns

ka

1 2

APPLICATIONS

• Voltage controlled oscillators (VCO).

MAM130

DESCRIPTION

The BB151 is a variable capacitance diode, fabricated in
planar technology, and encapsulated in the SOD323 very

Marking code: PA.
Cathode side indicated by a bar.

Fig.1 Simplified outline (SOD323) and symbol.

small plastic SMD package.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER MIN. MAX. UNIT

V

R

I

F

T

stg

T

j

continuous reverse voltage
continuous forward current −

storage temperature
operating junction temperature

−

−55

−55

10 V
20 mA
+150 °C
+150 °C

ELECTRICAL CHARACTERISTICS

=25°C unless otherwise specified.

T

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

R

r

s

C

d

C

d1V()

-----------------­C

d3V()

C

d1V()

-----------------­C

d4V()

reverse current VR= 10 V; see Fig.3 −−

V

=10V; Tj=85°C; see Fig.3 −−

R

10

200
diode series resistance f = 470 MHz; VR is the value at which Cd=9pF − 0.4 0.55 Ω
diode capacitance f = 1 MHz; see Figs 2 and 4

= 0.5 V −

V

R

V

= 1 V 15.4 16.2 17 pF

R

V

=2V − 12.8 − pF

R

= 3 V 9.9 10.6 11.3 pF

V

R

V

=4V − 9 − pF

R

19.1

−

capacitance ratio f = 1 MHz 1.45 1.53 −

capacitance ratio f = 1 MHz − 1.8 −

nA
nA

pF

1999 May 12 2

Philips Semiconductors Preliminary specification

Low-voltage variable capacitance diode BB151

GRAPHICAL DATA

20

handbook, full pagewidth

C

d

(pF)

16

12

8

4

0

−1

10

1 10

10

VR (V)

Fig.2 Diode capacitance as a function of reverse voltage; typical values.

MGS353

2

o

T ( C)

j

MLC816

3

10

handbook, halfpage

I

R

(nA)

2

10

10

50

Fig.3 Reverse current as a function of junction

temperature; maximum values.

−3

10

handbook, halfpage

TC

d

−1

(K

)

−4

10

−1

1000

10

110

MGS354

VR (V)

Fig.4 Temperature coefficient of diode

capacitance as a function of
reverse voltage; typical values.

1999 May 12 3