Philips BB145B Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

M3D319

BB145B

Low-voltage variable capacitance
diode

Product specification 1999 Dec 15

Philips Semiconductors Product specification

Low-voltage variable capacitance diode BB145B

FEATURES

• Ultra small plastic SMD package

• C4: 2.75 pF; ratio: 2.4

• Low series resistance.

APPLICATIONS

• Voltage controlled oscillators
(VCO).

DESCRIPTION

The BB145B is a planar technology
variable capacitance diode in a
SOD523 (SC-79) package.

PINNING

PIN DESCRIPTION

1 cathode
2 anode

handbook, 2 columns

12

Z

Marking code: Z.
Orientation of marking code as shown.
Cathode side indicated by a bar.

MBK441

Fig.1 Simplified outline

(SOD523; SC-79) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

R

V

RM

I

F

T

stg

T

j

continuous reverse voltage − 6V
peak reverse voltage in series with a 10 kΩ resistor − 8V
continuous forward current − 20 mA
storage temperature −55 +150 °C
operating junction temperature −55 +150 °C

ELECTRICAL CHARACTERISTICS

Tj=25°C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

I

R

r

s

C

d

C

d1V()

---------------­C

d4V()

reverse current VR= 6 V; see Fig.3 − 10 nA

V

=6V; Tj=85°C; see Fig.3 − 200 nA

R

diode series resistance f = 470 MHz; VR=1V − 0.6 Ω
diode capacitance VR= 1 V; f = 1 MHz; see Figs 2 and 4 6.4 7.2 pF

= 4 V; f = 1 MHz; see Figs 2 and 4 2.55 2.95 pF

V

R

capacitance ratio f = 1 MHz 2.2 −

1999 Dec 15 2

Philips Semiconductors Product specification

Low-voltage variable capacitance diode BB145B

GRAPHICAL DATA

10

handbook, full pagewidth

C

d

(pF)

8

6

4

2

0

−1

10

f =1 MHz; Tj=25°C.

1

VR (V)

Fig.2 Diode capacitance as a function of reverse voltage; typical values.

MCD782

10

3

10

handbook, halfpage

I

R

(nA)

2

10

10

50

o

T ( C)

j

Fig.3 Reversecurrent asa functionofjunction

temperature; maximum values.

MLC816

−3

10

handbook, halfpage

TC

d

−1

(K

)

−4

10

−1

1000

10

110

MGS352

VR (V)

Fig.4 Temperature coefficient of diode

capacitance as a function of
reverse voltage; typical values.

1999 Dec 15 3