Philips BB143 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D319
BB143
Low-voltage variable
capacitance diode
Preliminary specification
1999 May 12
Philips Semiconductors Preliminary specification
Low-voltage variable capacitance diode BB143
FEATURES
• Excellent linearity
• Ultra small plastic SMD package
• C4: 2.25 pF; ratio: 2.35
PINNING
PIN DESCRIPTION
1 cathode
2 anode
• Low series resistance.
APPLICATIONS
• Voltage controlled oscillators (VCO).
DESCRIPTION
The BB143 is a variable capacitance diode, fabricated in
planar technology, and encapsulated in the
SOD523 (SC-79) ultra small plastic SMD package.
handbook, halfpage
Marking code: L.
Orientation of marking code as shown.
Cathode side indicated by a bar.
Fig.1 Simplified outline (SOD523; SC-79)
12
L
MBL026
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
R
V
RM
I
F
T
stg
T
j
continuous reverse voltage
peak reverse voltage in series with a 10 kΩ resistor
continuous forward current −
storage temperature
operating junction temperature
−
−
−55
−55
6V
8V
20 mA
+150 °C
+150 °C
ELECTRICAL CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
R
r
s
C
d
reverse current VR= 6 V; see Fig.3 −−
=6V; Tj=85°C; see Fig.3 −−
V
R
10
200
nA
nA
diode series resistance f = 470 MHz; VR=1V − 0.5 −Ω
diode capacitance VR= 1 V; f = 1 MHz;
4.75 5.3 5.75 pF
see Figs 2 and 4
V
= 4 V; f = 1 MHz;
R
2.05 2.25 2.55 pF
see Figs 2 and 4
C
d1V()
-----------------C
d4V()
capacitance ratio f = 1 MHz 2.1 2.35 −
1999 May 12 2
Philips Semiconductors Preliminary specification
Low-voltage variable capacitance diode BB143
GRAPHICAL DATA
10
handbook, full pagewidth
C
d
(pF)
8
6
4
2
0
−1
10
110
V
(V)
R
Fig.2 Diode capacitance as a function of reverse voltage; typical values.
MGS349
3
10
handbook, halfpage
I
R
(nA)
2
10
10
50
o
T ( C)
j
Fig.3 Reverse current as a function of junction
temperature; maximum values.
MLC816
−3
10
handbook, halfpage
TC
d
−1
(K
)
−4
10
−1
1000
10
110
MGS352
VR (V)
Fig.4 Temperature coefficient of diode
capacitance as a function of
reverse voltage; typical values.
1999 May 12 3
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