Philips bb130 DATASHEETS

DISCRETE SEMICONDUCTORS
DATA SH EET
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M3D053
BB130
AM variable capacitance diode
Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01
1996 May 03
Philips Semiconductors Product specification
AM variable capacitance diode BB130

FEATURES

Matched to 3%
Leaded plastic package
C28: 18 pF; ratio: 27.

APPLICATIONS

Electronic tuning in AM radio applications
VCO.

DESCRIPTION

The BB130 is a variable capacitance diode, fabricated in planar technology, and encapsulated in the SOD69 (TO-92 variant) leaded plastic package.
handbook, halfpage
Fig.1 Simplified outline (SOD69; TO-92 variant) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
R
I
F
T
stg
T
j
continuous reverse voltage continuous forward current
storage temperature operating junction temperature
k
a
MAM222
30 V 50 mA
55
55
+125 °C +85 °C

ELECTRICAL CHARACTERISTICS

T
=25°C; unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
R
r
s
C
d
C
d1V()
-------------------­C
d28V()
C
d
---------­C
d
reverse current VR= 30 V; see Fig.3 −−
= 30 V; Tj=85°C; see Fig.3 −−
V
R
50
300 diode series resistance f = 1 MHz; note 1 −−2Ω diode capacitance VR= 1 V; f = 1 MHz; see Figs 2 and 4
V
= 28 V; f = 1 MHz; see Figs 2 and 4
R
450 12
550 pF
21 capacitance ratio f = 1 MHz 23 −−
capacitance matching VR= 1 to 28 V; note 2 −−3%
nA nA
pF
Notes
1. V
= 1 V.
R
2. For a set of 2 diodes.
1996 May 03 2
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