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DISCRETE SEMICONDUCTORS
DATA SH EET
fpage
M3D053
BB130
AM variable capacitance diode
Product specification
Supersedes data of April 1992
File under Discrete Semiconductors, SC01
1996 May 03
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Philips Semiconductors Product specification
AM variable capacitance diode BB130
FEATURES
• Matched to 3%
• Leaded plastic package
• C28: 18 pF; ratio: 27.
APPLICATIONS
• Electronic tuning in AM radio
applications
• VCO.
DESCRIPTION
The BB130 is a variable capacitance
diode, fabricated in planar
technology, and encapsulated in the
SOD69 (TO-92 variant) leaded plastic
package.
handbook, halfpage
Fig.1 Simplified outline (SOD69; TO-92 variant) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
R
I
F
T
stg
T
j
continuous reverse voltage
continuous forward current −
storage temperature
operating junction temperature
k
a
MAM222
−
30 V
50 mA
−55
−55
+125 °C
+85 °C
ELECTRICAL CHARACTERISTICS
T
=25°C; unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
R
r
s
C
d
C
d1V()
-------------------C
d28V()
C
∆
d
---------C
d
reverse current VR= 30 V; see Fig.3 −−
= 30 V; Tj=85°C; see Fig.3 −−
V
R
50
300
diode series resistance f = 1 MHz; note 1 −−2Ω
diode capacitance VR= 1 V; f = 1 MHz; see Figs 2 and 4
V
= 28 V; f = 1 MHz; see Figs 2 and 4
R
450
12 −
−
550 pF
21
capacitance ratio f = 1 MHz 23 −−
capacitance matching VR= 1 to 28 V; note 2 −−3%
nA
nA
pF
Notes
1. V
= 1 V.
R
2. For a set of 2 diodes.
1996 May 03 2