DISCRETE SEMICONDUCTORS
DATA SH EET
fpage
M3D053
BB130
AM variable capacitance diode
Product specification
Supersedes data of April 1992
File under Discrete Semiconductors, SC01
1996 May 03
Philips Semiconductors Product specification
AM variable capacitance diode BB130
FEATURES
• Matched to 3%
• Leaded plastic package
• C28: 18 pF; ratio: 27.
APPLICATIONS
• Electronic tuning in AM radio
applications
• VCO.
DESCRIPTION
The BB130 is a variable capacitance
diode, fabricated in planar
technology, and encapsulated in the
SOD69 (TO-92 variant) leaded plastic
package.
handbook, halfpage
Fig.1 Simplified outline (SOD69; TO-92 variant) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
R
I
F
T
stg
T
j
continuous reverse voltage
continuous forward current −
storage temperature
operating junction temperature
k
a
MAM222
−
30 V
50 mA
−55
−55
+125 °C
+85 °C
ELECTRICAL CHARACTERISTICS
T
=25°C; unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
R
r
s
C
d
C
d1V()
-------------------C
d28V()
C
∆
d
---------C
d
reverse current VR= 30 V; see Fig.3 −−
= 30 V; Tj=85°C; see Fig.3 −−
V
R
50
300
diode series resistance f = 1 MHz; note 1 −−2Ω
diode capacitance VR= 1 V; f = 1 MHz; see Figs 2 and 4
V
= 28 V; f = 1 MHz; see Figs 2 and 4
R
450
12 −
−
550 pF
21
capacitance ratio f = 1 MHz 23 −−
capacitance matching VR= 1 to 28 V; note 2 −−3%
nA
nA
pF
Notes
1. V
= 1 V.
R
2. For a set of 2 diodes.
1996 May 03 2