Philips BAX12, BAX12A Datasheet
DATA SH EET
Product specification
Supersedes data of April 1996
1996 Sep 17
DISCRETE SEMICONDUCTORS
BAX12
Controlled avalanche diode
M3D176
1996 Sep 17 2
Philips Semiconductors Product specification
Controlled avalanche diode BAX12
FEATURES
• Hermetically sealed leaded glass
SOD27 (DO-35) package
• Switching speed: max. 50 ns
• General application
• Continuous reverse voltage:
max. 90 V
• Repetitive peak reverse voltage:
max. 90 V
• Repetitive peak forward current:
max. 800 mA
• Repetitive peak reverse current:
max. 600 mA
• Capable of absorbing transients
repetitively.
APPLICATIONS
• Switching of inductive loads in
semi-electronic telephone
exchanges.
DESCRIPTION
The BAX12 is a controlled avalanche diode fabricated in planar technology, and
encapsulated in the hermetically sealed leaded glass SOD27 (DO-35)
package.
Fig.1 Simplified outline (SOD27; DO35) and symbol.
Marking code: BAX12.
handbook, halfpage
MAM246
k
a
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1. It is allowed to exceed this value; see Figs 8 and 9. Care should be taken not to exceed the I
RRM
rating.
2. Device mounted on an FR4 printed circuit-board; lead length 10 mm.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
repetitive peak reverse voltage note 1 − 90 V
V
R
continuous reverse voltage note 1 − 90 V
I
F
continuous forward current see Fig.2; note 2 − 400 mA
I
FRM
repetitive peak forward current − 800 mA
I
FSM
non-repetitive peak forward current square wave; Tj=25°C prior to
surge; see Fig.4
t=1µs − 55 A
t = 100 µs − 15 A
t = 10 ms − 9A
P
tot
total power dissipation T
amb
=25°C; note 2 − 450 mW
I
RRM
repetitive peak reverse current − 600 mA
E
RRM
repetitive peak reverse energy tp≥ 50 µs; f ≤ 20 Hz; Tj=25°C − 5.0 mJ
T
stg
storage temperature −65 +200 °C
T
j
junction temperature − 200 °C
1996 Sep 17 3
Philips Semiconductors Product specification
Controlled avalanche diode BAX12
ELECTRICAL CHARACTERISTICS
T
j
=25°C; unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed circuit-board without metallization pad.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
F
forward voltage see Fig.3
I
F
=10mA − 750 mV
I
F
=50mA − 840 mV
I
F
= 100 mA − 900 mV
I
F
= 200 mA − 1.0 V
I
F
= 400 mA − 1.25 V
I
R
reverse current see Fig.5
V
R
=90V − 100 nA
V
R
= 90 V; Tj= 150 °C − 100 µA
V
(BR)R
reverse avalanche breakdown voltage IR= 1 mA 120 170 V
C
d
diode capacitance f = 1 MHz; VR=0;
see Fig.6
− 35 pF
t
rr
reverse recovery time when switched from
IF= 30 mA to IR=30mA;
RL= 100 Ω; measured at
IR= 3 mA; see Fig.10
− 50 ns
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-tp
thermal resistance from junction to tie-point lead length 10 mm 240 K/W
R
th j-a
thermal resistance from junction to ambient lead length 10 mm; note 1 375 K/W
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