Philips BAW62 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

M3D176

BAW62

High-speed diode

Product specification
Supersedes data of April 1996

1996 Sep 17

Philips Semiconductors Product specification

High-speed diode BAW62

FEATURES

• Hermetically sealed leaded glass
SOD27 (DO-35) package

• High switching speed: max. 4 ns

DESCRIPTION

The BAW62 is a high-speed switching diode fabricated in planar technology,
and encapsulated in the hermetically sealed leaded glass SOD27 (DO-35)
package.

• Continuous reverse voltage:
max. 75 V

• Repetitive peak reverse voltage:
max. 75 V

• Repetitive peak forward current:
max. 450 mA.

APPLICATIONS

• High-speed switching

handbook, halfpage

The diode is type branded.

Fig.1 Simplified outline (SOD27; DO-35) and symbol.

k

a

MAM246

• Fast logic applications.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V
I

F

I

FRM

I

FSM

RRM
R

repetitive peak reverse voltage − 75 V
continuous reverse voltage − 75 V
continuous forward current see Fig.2; note 1 − 250 mA
repetitive peak forward current − 450 mA
non-repetitive peak forward current square wave; Tj=25°C prior to

surge; see Fig.4

t=1µs − 4A
t=1ms − 1A
t=1s − 0.5 A

P

tot

T

stg

T

j

total power dissipation T

=25°C; note 1 − 350 mW

amb

storage temperature −65 +200 °C
junction temperature − 200 °C

Note

1. Device mounted on an FR4 printed circuit-board; lead length 10 mm.

1996 Sep 17 2

Philips Semiconductors Product specification

High-speed diode BAW62

ELECTRICAL CHARACTERISTICS

T

=25°C; unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

F

I

R

C

d

t

rr

V

fr

forward voltage see Fig.3

I

= 5 mA 620 750 mV

F

I

= 100 mA − 1000 mV

F

= 100 mA; Tj= 100 °C − 930 mV

I

F

reverse current see Fig.5

V

=20V − 25 nA

R

=50V − 200 nA

V

R

V

=75V − 5 µA

R

V

=20V; Tj= 150 °C − 50 µA

R

=75V; Tj= 150 °C − 100 µA

V

R

diode capacitance f = 1 MHz; VR= 0; see Fig.6 − 2pF
reverse recovery time when switched from IF= 10 mA to

− 4ns
IR= 10 mA; RL= 100 Ω;
measured at IR= 1 mA; see Fig.7

forward recovery voltage when switched from IF= 50 mA;

− 2.5 V
tr= 20 ns; see Fig.8

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R
R

th j-tp
th j-a

thermal resistance from junction to tie-point lead length 10 mm 240 K/W
thermal resistance from junction to ambient lead length 10 mm; note 1 500 K/W

Note

1. Device mounted on a printed circuit-board without metallization pad.

1996 Sep 17 3