Philips BAW56T Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

M3D173

BAW56T

High-speed double diode

Product specification
File under Discrete Semiconductors, SC01

1997 Dec 19

Philips Semiconductors Product specification

High-speed double diode BAW56T

FEATURES

• Very small plastic SMD package

• High switching speed: max. 4 ns

• Continuous reverse voltage:

max. 75 V

DESCRIPTION

Two high-speed switching diodes in a
common anode configuration,
fabricated in planar technology, in a
very small rectangular SMD SOT416
(SC-75) package.

PINNING

PIN DESCRIPTION

1 cathode 1
2 cathode 2
3 common anode

• Repetitive peak reverse voltage:
max. 85 V

• Repetitive peak forward current:
max. 500 mA.

APPLICATIONS

• High-speed switching in e.g.
surface mounted circuits.

Marking code: A1.

handbook, halfpage

12

3

3

12

MAM369

Fig.1 Simplified outline (SOT416; SC-75) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Per diode (unless otherwise specified)

V
V
I

F

I

FRM

I

FSM

P
T
T

RRM
R

tot
stg
j

repetitive peak reverse voltage − 85 V
continuous reverse voltage − 75 V
continuous forward current Ts=90°C; see Fig.2

repetitive peak forward current − 500 mA
non-repetitive peak forward current square wave; Tj=25°C prior to

total power dissipation Ts=90°C; one diode loaded − 170 mW
storage temperature −65 +150 °C
junction temperature − +150 °C

single diode loaded − 150 mA
both diodes loaded − 75 mA

surge; see Fig.4

t=1µs − 4A
t=1ms − 1A
t=1s − 0.5 A

1997 Dec 19 2

Philips Semiconductors Product specification

High-speed double diode BAW56T

ELECTRICAL CHARACTERISTICS

T

=25°C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MAX. UNIT

Per diode

V

F

I

R

C

d

t

rr

V

fr

forward voltage see Fig.3

= 1 mA 0.715 V

I

F

I

= 10 mA 0.855 V

F

=50mA 1 V

I

F

I

= 150 mA 1.25 V

F

reverse current see Fig.5

V

= 25 V 30 nA

R

=75V 1 µA

V

R

V

= 25 V; Tj= 150 °C30µA

R

V

= 75 V; Tj= 150 °C50µA

R

diode capacitance VR= 0; f = 1 MHz; see Fig.6 2 pF
reverse recovery time switching from IF= 10 mA to IR=10mA;

4ns

RL= 100 Ω; measured at IR= 1 mA; see Fig.7

forward recovery voltage switched to IF= 10 mA; tr= 20 ns; see Fig.8 1.75 V

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-s

thermal resistance from junction to soldering point one diode loaded 350 K/W

1997 Dec 19 3

Philips Semiconductors Product specification

High-speed double diode BAW56T

GRAPHICAL DATA

300

handbook, halfpage

I

F

(mA)

200

100

0

0

(1) One diode loaded.
(2) Both diodes loaded.

(1)

(2)

100

MBK249

Ts (°C)

Fig.2 Maximum permissiblecontinuous forward

current per diode as a function of
soldering point temperature.

200

300

handbook, halfpage

I

F

(mA)

200

100

0

02

(1) Tj= 150 °C; typical values.
(2) Tj=25°C; typical values.
(3) Tj=25°C; maximum values.

Fig.3 Forward current as a function of

forward voltage.

(1) (3)(2)

1

MBG382

VF (V)

2

10

handbook, full pagewidth

I

FSM

(A)

10

1

−1

10

1

Based on square wave currents.
Tj=25°C prior to surge.

Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.

MBG704

10

2

10

3

10

tp (µs)

4

10

1997 Dec 19 4