Philips BAW56S Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
MBD128
BAW56S
High-speed double diode array
Product specification
Supersedes data of 1997 Aug 27
File under Discrete Semiconductors, SC01
1997 Oct 21
Philips Semiconductors Product specification
High-speed double diode array BAW56S
FEATURES
• Small plastic SMD package
• High switching speed: max. 4 ns
• Continuous reverse voltage:
max. 75 V
• Repetitive peak reverse voltage:
max. 85 V
• Repetitive peak forward current:
max. 450 mA.
APPLICATIONS
• General purpose switching in e.g.
surface mounted circuits.
DESCRIPTION
The BAW56S consists of two dual
high-speed switching diodes with
common anodes, fabricated in planar
technology, and encapsulated in the
small SMD SOT363 plastic package.
PINNING
PIN DESCRIPTION
1 cathode (k1)
2 cathode (k2)
3 common anode (a1)
4 cathode (k3)
5 cathode (k4)
6 common anode (a2)
654
handbook, halfpage
123
Top view
Marking code: A1t.
MSA370
Fig.1 Simplified outline (SOT363) and symbol.
654
123
MGL159
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
V
V
I
RRM
R
F
repetitive peak reverse voltage − 85 V
continuous reverse voltage − 75 V
continuous forward current single diode loaded; see Fig.2 − 250 mA
all diodes loaded; see Fig.2 − 100 mA
I
FRM
I
FSM
repetitive peak forward current − 450 mA
non-repetitive peak forward current square wave; Tj=25°C prior to
surge; see Fig.4
t=1µs − 4A
t=1ms − 1A
t=1s − 0.5 A
P
tot
T
stg
T
j
total power dissipation Ts=60°C; note 1 − 350 mW
storage temperature −65 +150 °C
junction temperature −65 +150 °C
Note
1. One or more diodes loaded.
1997 Oct 21 2
Philips Semiconductors Product specification
High-speed double diode array BAW56S
ELECTRICAL CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MAX. UNIT
Per diode
V
F
I
R
C
d
t
rr
V
fr
forward voltage see Fig.3
= 1 mA 715 mV
I
F
I
= 10 mA 855 mV
F
=50mA 1 V
I
F
I
= 150 mA 1.25 V
F
reverse current see Fig.5
V
= 25 V 30 nA
R
=75V 1 µA
V
R
V
= 25 V; Tj= 150 °C30µA
R
V
= 75 V; Tj= 150 °C50µA
R
diode capacitance VR= 0; f = 1 MHz; see Fig.6 2 pF
reverse recovery time when switched from IF= 10 mA to IR= 10 mA;
4ns
RL= 100 Ω; measured at IR= 1 mA; see Fig.7
forward recovery voltage when switched from IF= 10 mA; tr= 20 ns; see Fig.8 1.75 V
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
thermal resistance from junction to soldering point note 1 255 K/W
Note
1. One or more diodes loaded.
1997 Oct 21 3
Philips Semiconductors Product specification
High-speed double diode array BAW56S
GRAPHICAL DATA
300
I
single diode loaded
F
(mA)
200
all diodes loaded
100
0
0 200
100
Ts (°C)
MBK148
Fig.2 Maximum permissiblecontinuous forward
current as a function of soldering point
temperature.
300
handbook, halfpage
I
F
(mA)
200
100
0
02
(1) Tj= 150 °C; typical values.
(2) Tj=25°C; typical values.
(3) Tj=25°C; maximum values.
Fig.3 Forward current as a function of
forward voltage.
(1) (3)(2)
1
MBG382
VF (V)
2
10
handbook, full pagewidth
I
FSM
(A)
10
1
−1
10
1
Based on square wave currents.
Tj=25°C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
MBG704
10
2
10
3
10
tp (µs)
4
10
1997 Oct 21 4
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