Philips BAW56 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D088
BAW56
High-speed double diode
Product specification
Supersedes data of 1996 Sep 17
1999 May 11
Philips Semiconductors Product specification
High-speed double diode BAW56
FEATURES
• Small plastic SMD package
• High switching speed: max. 4 ns
• Continuous reverse voltage:
max. 75 V
DESCRIPTION
The BAW56 consists of two
high-speed switching diodes with
common anodes, fabricated in planar
technology, and encapsulated in the
small SOT23 plastic SMD package.
• Repetitive peak reverse voltage:
max. 85 V
• Repetitive peak forward current:
max. 450 mA.
handbook, 4 columns
21
APPLICATIONS
• High-speed switching in thick and
thin-film circuits.
3
Top view
Marking code: A1p =made in Hong Kong; A1t = made in Malaysia.
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
PINNING
PIN DESCRIPTION
1 cathode (k1)
2 cathode (k2)
3 common anode
21
3
MAM206
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
V
V
I
RRM
R
F
repetitive peak reverse voltage − 85 V
continuous reverse voltage − 75 V
continuous forward current single diode loaded; note 1;
− 215 mA
see Fig.2
double diode loaded; note 1;
− 125 mA
see Fig.2
I
FRM
I
FSM
repetitive peak forward current − 450 mA
non-repetitive peak forward
current
square wave; Tj=25°C prior to
surge; see Fig.4
t=1µs − 4A
t=1ms − 1A
t=1s − 0.5 A
P
tot
T
stg
T
j
total power dissipation T
=25°C; note 1 − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
Note
1. Device mounted on an FR4 printed-circuit board.
1999 May 11 2
Philips Semiconductors Product specification
High-speed double diode BAW56
ELECTRICAL CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MAX. UNIT
Per diode
V
F
I
R
C
d
t
rr
V
fr
forward voltage see Fig.3
= 1 mA 715 mV
I
F
I
= 10 mA 855 mV
F
=50mA 1 V
I
F
I
= 150 mA 1.25 V
F
reverse current see Fig.5
V
=25V 30 nA
R
=75V 1 µA
V
R
V
=25V; Tj= 150 °C30 µA
R
V
=75V; Tj= 150 °C50 µA
R
diode capacitance f = 1 MHz; VR= 0; see Fig.6 2 pF
reverse recovery time when switched from IF= 10 mA to
4ns
IR= 10 mA; RL= 100 Ω;
measured at IR= 1 mA; see Fig.7
forward recovery voltage when switched from IF= 10 mA;
1.75 V
tr= 20 ns; see Fig.8
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-tp
th j-a
thermal resistance from junction to tie-point 360 K/W
thermal resistance from junction to ambient note 1 500 K/W
Note
1. Device mounted on an FR4 printed-circuit board.
1999 May 11 3
Philips Semiconductors Product specification
High-speed double diode BAW56
GRAPHICAL DATA
300
I
F
(mA)
200
100
0
0 200
Device mounted on an FR4 printed-circuit board.
single diode loaded
double diode loaded
100
T ( C)
amb
MBD033
o
Fig.2 Maximum permissible continuous forward
current as a function of ambient
temperature.
300
handbook, halfpage
I
F
(mA)
200
100
0
02
(1) Tj= 150 °C; typical values.
(2) Tj=25°C; typical values.
(3) Tj=25°C; maximum values.
(1) (3)(2)
1
MBG382
VF (V)
Fig.3 Forward current as a function of forward
voltage.
2
10
handbook, full pagewidth
I
FSM
(A)
10
1
−1
10
1
Based on square wave currents.
=25°C prior to surge.
T
j
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
MBG704
10
2
10
3
10
tp (µs)
4
10
1999 May 11 4
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