Philips BAW56 Datasheet

DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D088
BAW56
High-speed double diode
Product specification Supersedes data of 1996 Sep 17
1999 May 11
Philips Semiconductors Product specification
High-speed double diode BAW56
FEATURES
Small plastic SMD package
High switching speed: max. 4 ns
Continuous reverse voltage:
max. 75 V
DESCRIPTION
The BAW56 consists of two high-speed switching diodes with common anodes, fabricated in planar technology, and encapsulated in the small SOT23 plastic SMD package.
Repetitive peak reverse voltage: max. 85 V
Repetitive peak forward current: max. 450 mA.
handbook, 4 columns
21
APPLICATIONS
High-speed switching in thick and thin-film circuits.
3
Top view
Marking code: A1p =made in Hong Kong; A1t = made in Malaysia.
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
PINNING
PIN DESCRIPTION
1 cathode (k1) 2 cathode (k2) 3 common anode
21
3
MAM206
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
V V I
RRM R
F
repetitive peak reverse voltage 85 V continuous reverse voltage 75 V continuous forward current single diode loaded; note 1;
215 mA
see Fig.2 double diode loaded; note 1;
125 mA
see Fig.2
I
FRM
I
FSM
repetitive peak forward current 450 mA non-repetitive peak forward
current
square wave; Tj=25°C prior to surge; see Fig.4
t=1µs 4A t=1ms 1A t=1s 0.5 A
P
tot
T
stg
T
j
total power dissipation T
=25°C; note 1 250 mW
amb
storage temperature 65 +150 °C junction temperature 150 °C
Note
1. Device mounted on an FR4 printed-circuit board.
1999 May 11 2
Philips Semiconductors Product specification
High-speed double diode BAW56
ELECTRICAL CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MAX. UNIT
Per diode
V
F
I
R
C
d
t
rr
V
fr
forward voltage see Fig.3
= 1 mA 715 mV
I
F
I
= 10 mA 855 mV
F
=50mA 1 V
I
F
I
= 150 mA 1.25 V
F
reverse current see Fig.5
V
=25V 30 nA
R
=75V 1 µA
V
R
V
=25V; Tj= 150 °C30 µA
R
V
=75V; Tj= 150 °C50 µA
R
diode capacitance f = 1 MHz; VR= 0; see Fig.6 2 pF reverse recovery time when switched from IF= 10 mA to
4ns IR= 10 mA; RL= 100 ; measured at IR= 1 mA; see Fig.7
forward recovery voltage when switched from IF= 10 mA;
1.75 V
tr= 20 ns; see Fig.8
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R R
th j-tp th j-a
thermal resistance from junction to tie-point 360 K/W thermal resistance from junction to ambient note 1 500 K/W
Note
1. Device mounted on an FR4 printed-circuit board.
1999 May 11 3
Philips Semiconductors Product specification
High-speed double diode BAW56
GRAPHICAL DATA
300
I
F
(mA)
200
100
0
0 200
Device mounted on an FR4 printed-circuit board.
single diode loaded
double diode loaded
100
T ( C)
amb
MBD033
o
Fig.2 Maximum permissible continuous forward
current as a function of ambient temperature.
300
handbook, halfpage
I
F
(mA)
200
100
0
02
(1) Tj= 150 °C; typical values. (2) Tj=25°C; typical values. (3) Tj=25°C; maximum values.
(1) (3)(2)
1
MBG382
VF (V)
Fig.3 Forward current as a function of forward
voltage.
2
10
handbook, full pagewidth
I
FSM
(A)
10
1
1
10
1
Based on square wave currents.
=25°C prior to surge.
T
j
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
MBG704
10
2
10
3
10
tp (µs)
4
10
1999 May 11 4
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