Philips BAV99 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

ook, halfpage

M3D088

BAV99

High-speed double diode

Product specification
Supersedes data of 1996 Sep 17

1999 May 11

Philips Semiconductors Product specification

High-speed double diode BAV99

FEATURES

• Small plastic SMD package

• High switching speed: max. 4 ns

• Continuous reverse voltage:

max. 75 V

• Repetitive peak reverse voltage:
max. 85 V

• Repetitive peak forward current:
max. 450 mA.

APPLICATIONS

• High-speed switching in thick and
thin-film circuits.

DESCRIPTION

The BAV99 consists of two

PINNING

PIN DESCRIPTION

high-speed switching diodes
connected in series, fabricated in
planar technology, and encapsulated
in the small SOT23 plastic SMD
package.

handbook, halfpage

Marking code: A7p =made in Hong Kong; A7t = made in Malaysia.

21

3

Fig.1 Simplified outline (SOT23) and symbol.

1 anode
2 cathode
3 common connection

12

3

MAM232

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Per diode

V
V
I

RRM
R

F

repetitive peak reverse voltage − 85 V
continuous reverse voltage − 75 V
continuous forward current single diode loaded; see Fig.2;

− 215 mA

note 1
double diode loaded; see Fig.2;

− 125 mA

note 1

I

FRM

I

FSM

repetitive peak forward current − 450 mA
non-repetitive peak forward current square wave; Tj=25°C prior to

surge; see Fig.4

t=1µs − 4A
t=1ms − 1A
t=1s − 0.5 A

P

tot

T

stg

T

j

total power dissipation T

=25°C; note 1 − 250 mW

amb

storage temperature −65 +150 °C
junction temperature − 150 °C

Note

1. Device mounted on an FR4 printed-circuit board.

1999 May 11 2

Philips Semiconductors Product specification

High-speed double diode BAV99

ELECTRICAL CHARACTERISTICS

T

=25°C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MAX. UNIT

Per diode

V

F

I

R

C

d

t

rr

V

fr

forward voltage see Fig.3

= 1 mA 715 mV

I

F

I

= 10 mA 855 mV

F

=50mA 1 V

I

F

I

= 150 mA 1.25 V

F

reverse current see Fig.5

V

=25V 30 nA

R

=75V 1 µA

V

R

V

=25V; Tj= 150 °C30 µA

R

V

=75V; Tj= 150 °C50 µA

R

diode capacitance f = 1 MHz; VR= 0; see Fig.6 1.5 pF
reverse recovery time when switched from IF= 10 mA to

4ns
IR= 10 mA; RL= 100 Ω;
measured at IR= 1 mA; see Fig.7

forward recovery voltage when switched from IF= 10 mA;

1.75 V

tr= 20 ns; see Fig.8

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R
R

th j-tp
th j-a

thermal resistance from junction to tie-point 360 K/W
thermal resistance from junction to ambient note 1 500 K/W

Note

1. Device mounted on an FR4 printed-circuit board.

1999 May 11 3

Philips Semiconductors Product specification

High-speed double diode BAV99

GRAPHICAL DATA

300

I

F

(mA)

200

100

0

0 200

Device mounted on an FR4 printed-circuit board.

single diode loaded

double diode loaded

100

T ( C)

amb

MBD033

o

Fig.2 Maximum permissible continuous forward

current as a function of ambient
temperature.

300

handbook, halfpage

I

F

(mA)

200

100

0

02

(1) Tj= 150 °C; typical values.
(2) Tj=25°C; typical values.
(3) Tj=25°C; maximum values.

(1) (3)(2)

1

MBG382

VF (V)

Fig.3 Forward current as a function of forward

voltage.

2

10

handbook, full pagewidth

I

FSM

(A)

10

1

−1

10

1

Based on square wave currents.

=25°C prior to surge.

T

j

Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.

MBG704

10

2

10

3

10

tp (µs)

4

10

1999 May 11 4