DISCRETE SEMICONDUCTORS
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M3D088
BAV73
Dual high-speed switching diode
in common cathode configuration
Preliminary specification
1997 May 06
Philips Semiconductors Preliminary specification
Dual high-speed switching diode
in common cathode configuration
FEATURES
• Plastic SMD package
• High switching speed
• Common cathode configuration.
APPLICATIONS
• General.
DESCRIPTION
Dual diode in a common cathode
configuration in a small rectangular
SMD SOT23 package.
PINNING SOT23
handbook, 4 columns
Marking code: JBp.
PIN DESCRIPTION
1 anode 1
2 anode 2
3 common cathode
21
21
3
3
Top view
MAM108
BAV73
Fig.1 Simplified outline and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
V
RRM
V
R
I
F(AV)
I
F
I
FRM
I
FSM
repetitive peak reverse voltage − 250 V
continuous reverse voltage − 200 V
average forward current average over any 20 ms period; tp≤ 0.5 ms − 200 mA
continuous forward current − 200 mA
repetitive peak forward current − 625 mA
non-repetitive peak forward
current
t=1µs − 9A
t = 100 µs − 3A
t = 10 ms − 1.7 A
P
tot
T
stg
T
j
total power dissipation T
=25°C; note 1 − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
Note
1. Device mounted on an FR4 printed-circuit board.
1997 May 06 2
Philips Semiconductors Preliminary specification
Dual high-speed switching diode
BAV73
in common cathode configuration
ELECTRICAL CHARACTERISTICS
T
=25°C; unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
V
F
V
(BR)R
I
R
C
d
t
rr
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
th j-s
forward voltage IF= 100 mA − 1V
= 200 mA − 1.25 V
I
F
reverse breakdown voltage IR= 100 µA 250 − V
reverse current VR= 250 V − 100 nA
V
= 250 V; Tj= 150 °C − 100 µA
R
diode capacitance VR= 0; f = 1 MHz − 5pF
reverse recovery time switching from IF= 30 mA to IR= 30 mA;
− 50 ns
RL= 100 Ω; measured at IR=3mA
thermal resistance from junction to soldering point 360 K/W
1997 May 06 3