Philips bav73 n DATASHEETS

DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D088
BAV73
Dual high-speed switching diode in common cathode configuration
Preliminary specification
1997 May 06
Philips Semiconductors Preliminary specification
Dual high-speed switching diode in common cathode configuration

FEATURES

Plastic SMD package
High switching speed
Common cathode configuration.

APPLICATIONS

General.

DESCRIPTION

Dual diode in a common cathode configuration in a small rectangular SMD SOT23 package.

PINNING SOT23

handbook, 4 columns
Marking code: JBp.
PIN DESCRIPTION
1 anode 1 2 anode 2 3 common cathode
21
21
3
3
Top view
MAM108
BAV73
Fig.1 Simplified outline and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
V
RRM
V
R
I
F(AV)
I
F
I
FRM
I
FSM
repetitive peak reverse voltage 250 V continuous reverse voltage 200 V average forward current average over any 20 ms period; tp≤ 0.5 ms 200 mA continuous forward current 200 mA repetitive peak forward current 625 mA non-repetitive peak forward
current
t=1µs 9A t = 100 µs 3A t = 10 ms 1.7 A
P
tot
T
stg
T
j
total power dissipation T
=25°C; note 1 250 mW
amb
storage temperature 65 +150 °C junction temperature 150 °C
Note
1. Device mounted on an FR4 printed-circuit board.
1997 May 06 2
Philips Semiconductors Preliminary specification
Dual high-speed switching diode
BAV73
in common cathode configuration

ELECTRICAL CHARACTERISTICS

T
=25°C; unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
V
F
V
(BR)R
I
R
C
d
t
rr

THERMAL CHARACTERISTICS

SYMBOL PARAMETER VALUE UNIT
R
th j-s
forward voltage IF= 100 mA 1V
= 200 mA 1.25 V
I
F
reverse breakdown voltage IR= 100 µA 250 V reverse current VR= 250 V 100 nA
V
= 250 V; Tj= 150 °C 100 µA
R
diode capacitance VR= 0; f = 1 MHz 5pF reverse recovery time switching from IF= 30 mA to IR= 30 mA;
50 ns
RL= 100 ; measured at IR=3mA
thermal resistance from junction to soldering point 360 K/W
1997 May 06 3
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