Philips BAS86 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
lfpage
M3D121
BAS86
Schottky barrier diode
Product specification
Supersedes data of 1996 Mar 20
1996 Oct 01
Philips Semiconductors Product specification
Schottky barrier diode BAS86
FEATURES
• Low forward voltage
• High breakdown voltage
• Guard ring protected
• Hermetically-sealed small SMD
DESCRIPTION
Planar Schottky barrier diode with an
integrated protection ring against
static discharges.
This surface mounted diode is
encapsulated in a hermetically sealed
SOD80C glass SMD package with
tin-plated metal discs at each end. It
is suitable for “automatic placement”
and as such it can withstand
immersion soldering.
package.
APPLICATIONS
• Ultra high-speed switching
handbook, halfpage
ka
• Voltage clamping
• Protection circuits
MAM190
• Blocking diodes.
Cathode indicated by a grey band.
Fig.1 Simplified outline (SOD80C), pin configuration and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
R
I
F
I
F(AV)
I
FRM
I
FSM
T
stg
T
j
T
amb
continuous reverse voltage
−
continuous forward current −
average forward current
repetitive peak forward current tp≤ 1 sec.; δ≤0.5
see Fig.2
−
−
non-repetitive peak forward current tp=10ms 5 A
storage temperature
junction temperature
operating ambient temperature
−65
−
−65
50 V
200 mA
200 mA
500 mA
+150 °C
125 °C
+125 °C
1996 Oct 01 2
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