Philips bas85 DATASHEETS
DISCRETE SEMICONDUCTORS
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M3D121
BAS85
Schottky barrier diode
Product specification
Supersedes data of 1996 Oct 01
2000 May 25
Philips Semiconductors Product specification
Schottky barrier diode BAS85
FEATURES
• Low forward voltage
• High breakdown voltage
• Guard ring protected
• Hermetically-sealed small SMD
DESCRIPTION
Planar Schottky barrier diodewith an
integrated protection ring against
static discharges.
This surface mounted diode is
encapsulatedinahermeticallysealed
SOD80C glass SMD package with
tin-plated metal discs at each end. It
is suitable for “automatic placement”
and as such it can withstand
immersion soldering.
package.
APPLICATIONS
handbook, halfpage
ka
• Ultra high-speed switching
• Voltage clamping
• Protection circuits
• Blocking diodes.
Cathode indicated by a grey band.
MAM190
Fig.1 Simplified outline (SOD80C), pin configuration and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
R
I
F
I
F(AV)
continuous reverse voltage − 30 V
continuous forward current − 200 mA
average forward current V
= 25 V; a = 1.57; δ = 0.5;
RWM
− 200 mA
note 1; Fig.2
I
FRM
I
FSM
T
stg
T
j
T
amb
repetitive peak forward current tp≤ 1s;δ≤0.5 − 300 mA
non-repetitive peak forward current tp=10ms − 5A
storage temperature −65 +150 °C
junction temperature − 125 °C
operating ambient temperature −65 +125 °C
Note
1. Refer to SOD80 standard mounting conditions.
2000 May 25 2
Philips Semiconductors Product specification
Schottky barrier diode BAS85
ELECTRICAL CHARACTERISTICS
T
=25°C; unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
F
I
R
C
d
Note
1. Pulsed test: t
forward voltage see Fig.3
I
= 0.1 mA 240 mV
F
I
= 1 mA 320 mV
F
= 10 mA 400 mV
I
F
I
= 30 mA 500 mV
F
= 100 mA 800 mV
I
F
reverse current VR= 25 V; note 1; see Fig.4 2.3 µA
diode capacitance f = 1 MHz; VR= 1 V; see Fig.5 10 pF
= 300 µs; δ = 0.02.
p
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 320 K/W
Note
1. Refer to SOD80 standard mounting conditions.
2000 May 25 3
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