Philips BAS83, BAS82, BAS81 Datasheet

DISCRETE SEMICONDUCTORS
DATA SH EET
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BAS81; BAS82; BAS83
Schottky barrier diodes
Product specification Supersedes data of 1996 Sep 30
1998 Jun 24
Philips Semiconductors Product specification
Schottky barrier diodes BAS81; BAS82; BAS83
FEATURES
Low forward voltage
High breakdown voltage
Guard ring protected
DESCRIPTION
Planar Schottky barrier diode with an integrated protection ring against static discharges. This surface mounted diode is encapsulated in a
hermetically sealed SOD80C glass SMD package with tin-plated metal discs at each end. It is suitable for “automatic placement” and as such it can withstand immersion soldering.
Hermetically-sealed small SMD package
Low diode capacitance.
handbook, halfpage
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APPLICATIONS
Ultra high-speed switching
MAM190
Voltage clamping
Protection circuits
Blocking diodes.
Cathode indicated by a grey band.
Fig.1 Simplified outline (SOD80C), pin configuration and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
I
F
I
FRM
I
FSM
T T
R
stg j
continuous reverse voltage
BAS81 BAS82 BAS83
continuous forward current repetitive peak forward current tp≤ 1s;δ≤0.5 non-repetitive peak forward current tp=1s storage temperature junction temperature
65
40 V 50 V 60 V 30 mA 150 mA 500 mA +150 °C 125 °C
1998 Jun 24 2
Philips Semiconductors Product specification
Schottky barrier diodes BAS81; BAS82; BAS83
ELECTRICAL CHARACTERISTICS
T
=25°C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
F
I
R
C
d
Note
1. Pulsed test: t
THERMAL CHARACTERISTICS
forward voltage see Fig.2
I
= 0.1 mA
F
=1mA
I
F
=15mA
I
F
reverse current VR=V
Rmax
; see Fig.3
diode capacitance f = 1 MHz; VR= 2 V; see Fig.4
= 300 µs; δ = 0.02.
p
330 mV 410 mV 1V 200
nA
1.6 pF
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 320 K/W
Note
1. Refer to SOD80 standard mounting conditions.
1998 Jun 24 3
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