DISCRETE SEMICONDUCTORS
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M3D121
BAS81; BAS82; BAS83
Schottky barrier diodes
Product specification
Supersedes data of 1996 Sep 30
1998 Jun 24
Philips Semiconductors Product specification
Schottky barrier diodes BAS81; BAS82; BAS83
FEATURES
• Low forward voltage
• High breakdown voltage
• Guard ring protected
DESCRIPTION
Planar Schottky barrier diode with an
integrated protection ring against
static discharges. This surface
mounted diode is encapsulated in a
hermetically sealed SOD80C glass
SMD package with tin-plated metal
discs at each end. It is suitable for
“automatic placement” and as such it
can withstand immersion soldering.
• Hermetically-sealed small SMD
package
• Low diode capacitance.
handbook, halfpage
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APPLICATIONS
• Ultra high-speed switching
MAM190
• Voltage clamping
• Protection circuits
• Blocking diodes.
Cathode indicated by a grey band.
Fig.1 Simplified outline (SOD80C), pin configuration and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
I
F
I
FRM
I
FSM
T
T
R
stg
j
continuous reverse voltage
BAS81
BAS82
BAS83
continuous forward current −
repetitive peak forward current tp≤ 1s;δ≤0.5
non-repetitive peak forward current tp=1s
storage temperature
junction temperature
−
−
−
−
−
−65
−
40 V
50 V
60 V
30 mA
150 mA
500 mA
+150 °C
125 °C
1998 Jun 24 2
Philips Semiconductors Product specification
Schottky barrier diodes BAS81; BAS82; BAS83
ELECTRICAL CHARACTERISTICS
T
=25°C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
F
I
R
C
d
Note
1. Pulsed test: t
THERMAL CHARACTERISTICS
forward voltage see Fig.2
I
= 0.1 mA
F
=1mA
I
F
=15mA
I
F
reverse current VR=V
Rmax
; see Fig.3
diode capacitance f = 1 MHz; VR= 2 V; see Fig.4
= 300 µs; δ = 0.02.
p
330 mV
410 mV
1V
200
nA
1.6 pF
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 320 K/W
Note
1. Refer to SOD80 standard mounting conditions.
1998 Jun 24 3