Philips BAS70W Datasheet
DISCRETE SEMICONDUCTORS
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M3D102
BAS70W series
Schottky barrier (double) diodes
Product specification
Supersedes data of 1996 Mar 19
1999 Mar 26
Philips Semiconductors Product specification
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Schottky barrier (double) diodes BAS70W series
FEATURES
• Low forward voltage
• High breakdown voltage
• Guard ring protected
• Very small SMD package
• Low capacitance.
APPLICATIONS
• Ultra high-speed switching
• Voltage clamping
• Protection circuits
• Blocking diodes.
DESCRIPTION
Planar Schottky barrier diodes. Single
diodes (BAS70W) and double diodes
with different pinning (BAS70-04W;
-05W; -06W) are available.
The diodes are encapsulated in a
SOT323 very small plastic SMD
package.
PINNING
BAS70
PIN
W -04W -05W -06W
1a
2 n.c. k
a1a1k
1
a
2
2
3k1k1, a2k1, k2a1, a
andbook, 2 columns
Top view
3
12
MBC870
Fig.1 Simplified outline
(SOT323) and pin
configuration.
1
k
2
3
12
2
MLC358
Fig.3 BAS70-04W diode
configuration (symbol).
3
12
MLC359
Fig.4 BAS70-05W diode
configuration (symbol).
MARKING
TYPE NUMBER
MARKING
CODE
BAS70W 73∗
(1)
12
3
12
n.c.
MLC357
3
MLC360
BAS70-04W 74∗
BAS70-05W 75∗
BAS70-06W 76∗
Fig.2 BAS70W single diode
configuration (symbol).
Fig.5 BAS70-06W diode
configuration (symbol).
Note
1. ∗ = -: Made in Hong Kong.
∗ = t: Made in Malaysia.
1999 Mar 26 2
Philips Semiconductors Product specification
Schottky barrier (double) diodes BAS70W series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
V
I
F
I
FRM
I
FSM
T
T
T
R
stg
j
amb
continuous reverse voltage
continuous forward current −
repetitive peak forward current tp≤ 1s;δ≤0.5
non-repetitive peak forward current tp< 10 ms
storage temperature
junction temperature
operating ambient temperature
ELECTRICAL CHARACTERISTICS
T
=25°C unless otherwise specified.
amb
−
−
−
−65
−
−65
70 V
70 mA
70 mA
100 mA
+150 °C
150 °C
+150 °C
SYMBOL PARAMETER CONDITIONS MAX. UNIT
Per diode
V
F
I
R
τ charge carrier life time (Krakauer method) I
C
d
forward voltage see Fig.6
I
=1mA
F
=10mA
I
F
I
=15mA
F
reverse current VR= 50 V; note 1; see Fig.7
= 70 V; note 1; see Fig.7
V
R
=5mA
F
diode capacitance f = 1 MHz; VR= 0; see Fig.9
410 mV
750 mV
1V
100
10
nA
µA
100 ps
2pF
Note
1. Pulse test: t
= 300 µs; δ = 0.02.
p
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 625 K/W
Note
1. Refer to SOT323 standard mounting conditions.
1999 Mar 26 3
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