Philips BAS678 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

ook, halfpage

M3D088

BAS678

High-speed diode

Product specification
Supersedes data of April 1996
File under Discrete Semiconductors, SC01

1996 Sep 10

Philips Semiconductors Product specification

High-speed diode BAS678

FEATURES

• Small plastic SMD package

• High switching speed: max. 6 ns

• Continuous reverse voltage:

max. 80 V

DESCRIPTION

The BAS678 is a high-speed
switching diode fabricated in planar
technology, and encapsulated in the
small rectangular plastic SMD SOT23
package.

• Repetitive peak reverse voltage:
max. 100 V

• Repetitive peak forward current:
max. 600 mA.

handbook, halfpage

21

APPLICATIONS

• High-speed switching in hybrid
thick and thin-film circuits.

Marking code: L52.

Fig.1 Simplified outline (SOT23) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

PINNING

3

PIN DESCRIPTION

1 anode
2 not connected
3 cathode

2

n.c.

3

1

MAM185

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V
I

F

I

FRM

I

FSM

RRM
R

repetitive peak reverse voltage − 100 V
continuous reverse voltage − 80 V
continuous forward current see Fig.2; note 1 − 250 mA
repetitive peak forward current − 600 mA
non-repetitive peak forward current square wave; Tj=25°C prior to

surge; see Fig.4

t=1µs − 9A
t = 100 µs − 3A
t = 10 ms − 1.7 A

P

tot

T

stg

T

j

total power dissipation T
storage temperature −65 +150 °C
junction temperature − 150 °C

=25°C; note 1 − 250 mW

amb

Note

1. Device mounted on an FR4 printed-circuit board.

1996 Sep 10 2

Philips Semiconductors Product specification

High-speed diode BAS678

ELECTRICAL CHARACTERISTICS

T

=25°C; unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

F

I

R

C

d

t

rr

V

fr

Note

1. T

amb

forward voltage see 3; IF= 200 mA; d.c.; note 1 − 1.0 V
reverse current see Fig.5

=10V − 15 nA

V

R

=75V − 100 nA

V

R

=75V; Tj= 150 °C − 50 µA

V

R

diode capacitance f = 1 MHz; VR= 0; see Fig.6 − 2pF
reverse recovery time when switched from IF= 400 mA to

− 6ns
IR= 400 mA; RL= 100 Ω;
measured at IR= 40 mA; see Fig.7

forward recovery voltage when switched from IF= 10 mA;

− 2V
tr= 20 ns; see Fig.8

=25°C; device has reached the thermal equilibrium when mounted on an FR4 printed-circuit board.

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R
R

th j-tp
th j-a

thermal resistance from junction to tie-point 330 K/W
thermal resistance from junction to ambient note 1 500 K/W

Note

1. Device mounted on an FR4 printed-circuit board.

1996 Sep 10 3