Philips BAS56 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

ook, halfpage

M3D070

BAS56

High-speed double diode

Product specification
Supersedes data of April 1996

1996 Sep 10

Philips Semiconductors Product specification

High-speed double diode BAS56

FEATURES

• Small plastic SMD package

• High switching speed: max. 6 ns

• Continuous reverse voltage:

max. 60 V

• Repetitive peak reverse voltage:
max. 60 V

• Repetitive peak forward current:
max. 600 mA.

APPLICATIONS

• High speed switching in e.g.
surface mounted circuits.

DESCRIPTION

The BAS56 consists of two high­speed switching diodes fabricated in
planar technology, and encapsulated
in the small rectangular plastic SMD
SOT143 package. The diodes are not
connected.

handbook, halfpage

Top view

Marking code: L51.

43

21

Fig.1 Simplified outline (SOT143) and symbol.

PINNING

PIN DESCRIPTION

MAM059

1 cathode (k1)
2 cathode (k2)
3 anode (a2)
4 anode (a1)

4

3

1

2

1996 Sep 10 2

Philips Semiconductors Product specification

High-speed double diode BAS56

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V
V
V
I

F

I

FRM

I

FSM

P
T
T

RRM
RRM
R
R

tot
stg
j

repetitive peak reverse voltage − 60 V
repetitive peak reverse voltage series connection 120 V
continuous reverse voltage − 60 V
continuous reverse voltage series connection − 120 V
continuous forward current single diode loaded; see Fig.2;

− 200 mA

note 1
double diode loaded; see Fig.2;

− 150 mA

note 1

repetitive peak forward current single diode loaded − 600 mA

double diode loaded − 430 mA

non-repetitive peak forward current square wave; Tj=25°C prior to

surge; see Fig.4

t=1µs − 9A
t = 100 µs − 3A
t = 10 ms − 1.7 A

total power dissipation T

=25°C; note 1 − 250 mW

amb

storage temperature −65 +150 °C
junction temperature − 150 °C

Note

1. Device mounted on an FR4 printed-circuit board.

1996 Sep 10 3