Philips BAS56 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D070
BAS56
High-speed double diode
Product specification
Supersedes data of April 1996
1996 Sep 10
Philips Semiconductors Product specification
High-speed double diode BAS56
FEATURES
• Small plastic SMD package
• High switching speed: max. 6 ns
• Continuous reverse voltage:
max. 60 V
• Repetitive peak reverse voltage:
max. 60 V
• Repetitive peak forward current:
max. 600 mA.
APPLICATIONS
• High speed switching in e.g.
surface mounted circuits.
DESCRIPTION
The BAS56 consists of two highspeed switching diodes fabricated in
planar technology, and encapsulated
in the small rectangular plastic SMD
SOT143 package. The diodes are not
connected.
handbook, halfpage
Top view
Marking code: L51.
43
21
Fig.1 Simplified outline (SOT143) and symbol.
PINNING
PIN DESCRIPTION
MAM059
1 cathode (k1)
2 cathode (k2)
3 anode (a2)
4 anode (a1)
4
3
1
2
1996 Sep 10 2
Philips Semiconductors Product specification
High-speed double diode BAS56
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
V
I
F
I
FRM
I
FSM
P
T
T
RRM
RRM
R
R
tot
stg
j
repetitive peak reverse voltage − 60 V
repetitive peak reverse voltage series connection 120 V
continuous reverse voltage − 60 V
continuous reverse voltage series connection − 120 V
continuous forward current single diode loaded; see Fig.2;
− 200 mA
note 1
double diode loaded; see Fig.2;
− 150 mA
note 1
repetitive peak forward current single diode loaded − 600 mA
double diode loaded − 430 mA
non-repetitive peak forward current square wave; Tj=25°C prior to
surge; see Fig.4
t=1µs − 9A
t = 100 µs − 3A
t = 10 ms − 1.7 A
total power dissipation T
=25°C; note 1 − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
Note
1. Device mounted on an FR4 printed-circuit board.
1996 Sep 10 3
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