Philips NE5517, NE5517A, AU5517 Operation Manual

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INTEGRATED CIRCUITS

NE5517/NE5517A/AU5517

Dual operational transconductance amplifier

Product data Replaces NE5517/NE5517A dated 2001 Aug 03

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2002 Dec 06

Philips Semiconductor Product data

Dual operational transconductance amplifier

DESCRIPTION

The AU5517 and NE5517 contain two current-controlled transconductance amplifiers, each with a differential input and push-pull output. The AU5517/NE5517 offers significant design and performance advantages over similar devices for all types of programmable gain applications. Circuit performance is enhanced through the use of linearizing diodes at the inputs which enable a 10 dB signal-to-noise improvement referenced to 0.5% THD. The AU5517/NE5517 is suited for a wide variety of industrial and consumer applications.

Constant impedance buffers on the chip allow general use of the AU5517/NE5517. These buffers are made of Darlington transistors and a biasing network that virtually eliminate the change of offset voltage due to a burst in the bias current I

, hence eliminating the

ABC

audible noise that could otherwise be heard in high quality audio applications.

FEA TURES

•Constant impedance buffers

•∆V

of buffer is constant with amplifier I

BE

BIAS

change

•Excellent matching between amplifiers

•Linearizing diodes

•High output signal-to-noise ratio

APPLICA TIONS

•Multiplexers

•Timers

•Electronic music synthesizers

•Dolby HX Systems

•Current-controlled amplifiers, filters

•Current-controlled oscillators, impedances

PIN CONFIGURATION

PIN DESIGNA TION

PIN NO. SYMBOL NAME AND FUNCTION

NE5517/NE5517A/

N, D Packages

1

I

ABCa

2

D

a

3

+IN

a

4

–IN

a

5

VO

a

6

V–

INBUFFER

VO

BUFFERa

1 I 2 D 3 +IN 4 –IN 5 V 6 V– Negative supply 7 IN

BUFFERa

8 VO 9 VO

10 IN

BUFFERb

11 V+ Positive supply 12 V 13 –IN 14 +IN 15 D 16 I

7

a

8

Top View

Figure 1. Pin Configuration

ABCa

Oa

Amplifier bias input A Diode bias A

a

Non-inverting input A

a

Inverting input A

a

Output A

Buffer input A

BUFFERa BUFFERb

Buffer output A Buffer output B Buffer input B

Ob

ABCb

Output B Inverting input B

b

Non-inverting input B

b

Diode bias B

b

Amplifier bias input B

16 15 14 13 12 11 10

9

I

ABCb

D

b

+IN

b

–IN

b

VO

b

V+ IN

BUFFERb

VO

BUFFERb

SL00306

AU5517

ORDERING INFORMATION

DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG #

16-Pin Plastic Dual In-Line Package (DIP) 0 to +70 °C NE5517N SOT38-4 16-Pin Plastic Dual In-Line Package (DIP) 0 to +70 °C NE5517AN SOT38-4 16-Pin Small Outline (SO) Package 0 to +70 °C NE5517D SOT109-1 16-Pin Small Outline (SO) Package –40 to +125 °C AU5517D SOT109-1

Dolby is a registered trademark of Dolby Laboratories Inc., San Francisco, Calif.

2002 Dec 06

2

Philips Semiconductor Product data

Dual operational transconductance amplifier

CIRCUIT SCHEMATIC

V+

11

D4

2,15

–INPUT

AMP BIAS

INPUT

V–

6

4,13

1,16

Q6

Q7

D2

Q4

Q5

Q2

Q1

D1

D3

+INPUT 3,14

Q10

Q8

Figure 2. Circuit Schematic

Q9

Q11

NE5517/NE5517A/

AU5517

D6

Q14

V

OUTPUT

5,12

Q15 Q16

R1

D5

7,10

D7

D8

Q12

Q13

8,9

Q3

SL00307

CONNECTION DIAGRAM

B AMP BIAS

INPUT

16 15 14 13 12 11 10 9

INPUT

NOTE:

1. V+ of output buffers and amplifiers are internally connected.

DIODE

123 45 6 7 8

AMP

DIODE

BIAS

A

B

BIAS

AA

B

INPUT

(+)

INPUT

(+)

Figure 3. Connection Diagram

INPUT

–

+

–

INPUT

B

(–)

A

B

OUTPUT

B

A

OUTPUT

V+ (1)

A

V–

B

BUFFER

INPUT

BUFFER

INPUT

A

B BUFFER OUTPUT

BUFFER OUTPUT

A

SL00308

2002 Dec 06

3

Philips Semiconductor Product data

Dual operational transconductance amplifier

NE5517/NE5517A/

AU5517

ABSOLUTE MAXIMUM RATINGS

SYMBOL PARAMETER RATING UNIT

V

S

P

D

Supply voltage Power dissipation,

T

= 25 °C (still air)

amb

NE5517N, NE5517AN 1500 mW

NE5517D, AU5517D 1125 mW V I

D

I

ABC

I

SC

I

OUT

T

IN

amb

Differential input voltage ±5 V Diode bias current 2 mA Amplifier bias current 2 mA Output short-circuit duration Indefinite Buffer output current Operating temperature range

NE5517N, NE5517AN 0 °C to +70 °C °C

AU5517D –40 °C to +125 °C °C V

DC

T

stg

T

sld

DC input voltage +VS to –V Storage temperature range –65 °C to +150 °C °C Lead soldering temperature (10 sec max) 230 °C

NOTES:

1. For selections to a supply voltage above ±22 V, contact factory

2. The following derating factors should be applied above 25 °C N package at 12.0 mW/°C D package at 9.0 mW/°C

3. Buffer output current should be limited so as to not exceed package dissipation.

1

2

3

44 VDC or ±22 V

20 mA

S

2002 Dec 06

4

Philips Semiconductor Product data

SYMBOL

PARAMETER

TEST CONDITIONS

UNIT

I

BIAS

In ut bias current

gMForward transconductance

Dual operational transconductance amplifier

NE5517/NE5517A/

AU5517

DC ELECTRICAL CHARACTERISTICS

V

OS

V

OS

I

OS

I

OUT

V

OUT

I

CC

CMRR

I

IN

R

IN

B

W

SR Slew rate Unity gain compensated 50 50 V/µs IN

BUFFER

VO

BUFFER

NOTES:

1. These specifications apply for V

specified. The inputs to the buffers are grounded and outputs are open.

2. These specifications apply for V

connected to the transconductance amplifier output.

= ±15, R

3. V

S

Input offset voltage Over temperature range 5 mV

∆VOS/∆T Avg. TC of input offset voltage 7 7 µV/°C VOS including diodes Diode bias current (ID) = 500 µA 0.5 5 0.5 2 mV Input offset change 5 µA ≤ I Input offset current 0.1 0.6 0.1 0.6 µA ∆IOS/∆T Avg. TC of input offset current 0.001 0.001 µA/°C

p

∆IB/∆T Avg. TC of input current 0.01 0.01 µA/°C

gM tracking 0.3 0.3 dB

Peak output current RL = 0, I

Peak output voltage

Positive RL = ∞, 5 µA ≤ I

Negative RL = ∞, 5 µA ≤ I Supply current I VOS sensitivity

Positive ∆ VOS/∆ V+ 20 150 20 150 µV/V

Negative ∆ VOS/∆ V– 20 150 20 150 µV/V Common-mode rejection

ration Common-mode range ±12 ±13.5 ±12 ±13.5 V

Crosstalk Differential input current I

Leakage current I Input resistance 10 26 10 26 kΩ Open-loop bandwidth 2 2 MHz

Buffer input current 5 0.4 5 0.4 5 µA Peak buffer output voltage 5 10 10 V ∆VBE of buffer Refer to Buffer VBE test circuit

= ±15 V, T

S

= ±15 V, I

S

= 5 kΩ connected from Buffer output to –VS and 5 µA ≤ I

OUT

1

AU5517/NE5517 NE5517A

Min Typ Max Min Typ Max

0.4 5 0.4 2 mV

I

5 µA 0.3 5 0.3 2 mV

ABC

≤ 500 µA 0.1 0.1 3 mV

ABC

0.4 5 0.4 5 µA

Over temperature range 1 8 1 7 µA

6700 9600 1300 7700 9600 1200 µmho

Over temperature range 5400 4000 µmho

RL = 0, I

=5 µA 5 3 5 7 µA

ABC

= 500 µA 350 500 650 350 500 650 µA

ABC

RL = 0 300 300 µA

≤ 500 µA +12 +14.2 +12 +14.2 V

ABC

≤ 500 µA –12 –14.4 –12 –14.4 V

ABC

= 500 µA, both channels 2.6 4 2.6 4 mA

ABC

80 110 80 110 dB

Referred to input2

20 Hz < f < 20 kHz

= 0, input = ±4 V 0.02 100 0.02 10 nA

ABC

= 0 (Refer to test circuit) 0.2 100 0.2 5 nA

ABC

3

= 25 °C, amplifier bias current (I

amb

= 500 µA, R

ABC

= 5 kΩ connected from the buffer output to –VS and the input of the buffer is

OUT

≤ 500 µA.

ABC

100 100 dB

0.5 5 0.5 5 mV

) = 500 µA, Pins 2 and 15 open unless otherwise

ABC

2002 Dec 06

5

Philips Semiconductor Product data

Dual operational transconductance amplifier

TYPICAL PERFORMANCE CHARACTERISTICS

Input Offset Voltage

VS = ±15V

-55°C

+25°C

+125°C

0.1µA1µA10µA 100µA 1000µA

AMPLIFIER BIAS CURRENT (I

Peak Output Current

VS = ±15V

0.1µA1µA10µA 100µA 1000µA

AMPLIFIER BIAS CURRENT (I

INPUT OFFSET VOLTAGE (mV)

µ

PEAK OUTPUT CURRENT ( A)

5 4 3 2 1 0

-1

-2

-3

-4

-5

-6

-7

-8

4

10

3

10

2

10

1

+125°C

ABC

+125°C

ABC

)

+25°C

-55°C

3

10

2

10

1

INPUT OFFSET CURRENT (nA)

0.1

5 4 3 2 1 0

-1

-2

-3

-4

-5

COMMON-MODE RANGE (V)

-6

PEAK OUTPUT VOLTAGE AND

-7

-8

)

Input Bias Current

VS = ±15V

-55°C

+25°C

0.1µA1µA10µA 100µA 1000µA

AMPLIFIER BIAS CURRENT (I

Peak Output Voltage and

Common-Mode Range

V

OUT

V

CMR

VS = ±15V

RLOAD = ∞

T

amb

V

CMR

V

OUT

0.1µA1µA10µA 100µA 1000µA

AMPLIFIER BIAS CURRENT (I

+125°C

= 25°C

ABC

NE5517/NE5517A/

AU5517

4

10

3

10

2

10

INPUT BIAS CURRENT (nA)

1

)

5

10

4

10

3

10

2

10

LEAKAGE CURRENT (pA)

10

-50°C -25°C0°C25°C50°C75°C100°C125°C

)

Input Bias Current

VS = ±15V

-55°C

+25°C

0.1µA1µA10µA 100µA 1000µA

AMPLIFIER BIAS CURRENT (I

+125°C

ABC

)

Leakage Current

(+)VIN = (–)VIN = V

AMBIENT TEMPERATURE (TA)

OUT

= 36V

0V

4

10

3

10

2

10

INPUT LEAKAGE CURRENT (pA)

1

012345 67

Input Leakage

+125°C

+25°C

INPUT DIFFERENTIAL VOLTAGE

2002 Dec 06

5

10

µ

4

10

3

10

2

10

TRANSCONDUCTANCE (gM) — ( ohm)

10

Transconductance

gM

0.1µA1µA10µA 100µA 1000µA

AMPLIFIER BIAS CURRENT (I

PINS 2, 15

VS = ±15V

-55°C

OPEN

+25°C

+125°C

ABC

)

mq

m

M

Figure 4. Typical Performance Characteristics

6

2

10

Ω

1

10

1

0.1

INPUT RESISTANCE (MEG )

0.01

Input Resistance

PINS 2, 15

OPEN

0.1µA1µA10µA 100µA 1000µA

AMPLIFIER BIAS CURRENT (I

ABC

SL00309

)