Philips ABUK455-60 DATASHEETS

Philips Semiconductors	Product Specification
PowerMOS transistor	BUK455-60A/B

GENERAL DESCRIPTION

QUICK REFERENCE DATA

N-channel enhancement mode

SYMBOL

PARAMETER

MAX.

MAX.

UNIT

field-effect power transistor in a

BUK455

-60A

-60B

plastic envelope.

The device is intended for use in

VDS

Drain-source voltage

60

60

V

Switched Mode Power Supplies

ID

Drain current (DC)

41

38

A

(SMPS), motor control, welding,

Ptot

Total power dissipation

125

125

W

DC/DC and AC/DC converters, and

Tj

Junction temperature

175

175

˚C

in automotive and general purpose

RDS(ON)

Drain-source on-state

0.038

0.045

Ω

switching applications.

resistance

PINNING - TO220AB						PIN CONFIGURATION		SYMBOL
	PIN		DESCRIPTION			tab		d

1gate

2drain

3	source	g
tab	drain	s
	1 2 3

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL	PARAMETER	CONDITIONS		MIN.		MAX.		UNIT
VDS	Drain-source voltage	-		-		60		V
VDGR	Drain-gate voltage	RGS = 20 kΩ		-		60		V
±VGS	Gate-source voltage	-		-		30		V
					-60A		-60B
ID	Drain current (DC)	Tmb =	25 ˚C	-	41		38	A
ID	Drain current (DC)	Tmb = 100 ˚C		-	29		27	A
IDM	Drain current (pulse peak value)	Tmb =	25 ˚C	-	164		152	A
Ptot	Total power dissipation	Tmb =	25 ˚C	-		125		W
Tstg	Storage temperature	-		- 55		175		˚C
Tj	Junction Temperature	-		-		175		˚C

THERMAL RESISTANCES

SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT
Rth j-mb	Thermal resistance junction to		-	-	1.2	K/W
	mounting base
Rth j-a	Thermal resistance junction to		-	60	-	K/W
	ambient

April 1993

1

Rev 1.100

Philips Semiconductors	Product Specification
PowerMOS transistor	BUK455-60A/B

STATIC CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified

SYMBOL	PARAMETER	CONDITIONS			MIN.	TYP.	MAX.	UNIT
V(BR)DSS	Drain-source breakdown	VGS = 0 V; ID = 0.25 mA			60	-	-	V
	voltage
VGS(TO)	Gate threshold voltage	VDS = VGS; ID = 1 mA			2.1	3.0	4.0	V
IDSS	Zero gate voltage drain current	VDS = 60	V; VGS = 0	V; Tj = 25 ˚C	-	1	10	μA
IDSS	Zero gate voltage drain current	VDS = 60	V; VGS = 0	V; Tj =125 ˚C	-	0.1	1.0	mA
IGSS	Gate source leakage current	VGS = ±30 V; VDS = 0 V			-	10	100	nA
RDS(ON)	Drain-source on-state	VGS = 10 V;		BUK455-60A	-	0.03	0.038	Ω
	resistance	ID = 20 A		BUK455-60B	-	0.04	0.045	Ω

DYNAMIC CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified

SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT
gfs	Forward transconductance	VDS = 25 V; ID = 20 A	8	13.5	-	S
Ciss	Input capacitance	VGS = 0 V; VDS = 25 V; f = 1 MHz	-	1650	2000	pF
Coss	Output capacitance		-	560	750	pF
Crss	Feedback capacitance		-	300	400	pF
td on	Turn-on delay time	VDD = 30 V; ID = 3 A;	-	25	40	ns
tr	Turn-on rise time	VGS = 10 V; RGS = 50 Ω;	-	60	90	ns
td off	Turn-off delay time	Rgen = 50 Ω	-	125	160	ns
tf	Turn-off fall time		-	100	130	ns
Ld	Internal drain inductance	Measured from contact screw on	-	3.5	-	nH
		tab to centre of die
Ld	Internal drain inductance	Measured from drain lead 6 mm	-	4.5	-	nH
		from package to centre of die
Ls	Internal source inductance	Measured from source lead 6 mm	-	7.5	-	nH
		from package to source bond pad

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified

SYMBOL	PARAMETER	CONDITIONS		MIN.	TYP.	MAX.	UNIT
IDR	Continuous reverse drain	-		-	-	41	A
	current
IDRM	Pulsed reverse drain current	-		-	-	164	A
VSD	Diode forward voltage	IF = 41	A ; VGS = 0 V	-	1.4	2.0	V
trr	Reverse recovery time	IF = 41	A; -dIF/dt = 100 A/μs;	-	60	-	ns
Qrr	Reverse recovery charge	VGS = 0 V; VR = 30 V		-	0.30	-	μC

AVALANCHE LIMITING VALUE

Tmb = 25 ˚C unless otherwise specified

SYMBOL	PARAMETER	CONDITIONS		MIN.	TYP.	MAX.	UNIT
WDSS	Drain-source non-repetitive	ID = 41 A ; VDD ≤ 25 V ;		-	-	100	mJ
	unclamped inductive turn-off	VGS = 10 V ; RGS = 50	Ω
	energy

April 1993

2

Rev 1.100

Philips Semiconductors	Product Specification
PowerMOS transistor	BUK455-60A/B

120	PD%					Normalised Power Derating
110
100
90
80
70
60
50
40
30
20
10
0	0	20	40	60	80	100	120	140	160	180
					Tmb / C
	Fig.1.		Normalised power dissipation.
		PD% = 100×PD/PD 25 ˚C = f(Tmb)

ID%						Normalised Current Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
0	20	40		60	80	100	120	140	160	180
					Tmb / C
Fig.2. Normalised continuous drain current.
ID% = 100×ID/ID 25 ˚C = f(Tmb); conditions: VGS										³ 10 V
1000	ID / A							BUK455-60
				VDS/ID		A
100			=			B	tp = 10 us
		RDS(ON)

100 us

10											1 ms
				DC
										10 ms
1											100 ms
			10
1									100
									VDS / V
Fig.3.			Safe operating area. Tmb = 25 ˚C

ID & IDM = f(VDS); IDM single pulse; parameter tp

10	Zth j-mb / (K/W)				BUKx55-lv
1	D =
	0.5
	0.2
0.1	0.1
	0.05
	0.02
0.01	0		P	tp	D =	tp
			D			T
					T	t
0.001
1E-07		1E-05	1E-03		1E-01	1E+01
			t / s

Fig.4. Transient thermal impedance.
	Zth j-mb = f(t); parameter D = tp/T
ID / A				BUK455-50A
80	20	10
	15			VGS / V =
70					8
60
50					7
40
30					6
20
10					5
0					4
0	2	4	6	8	10
			VDS / V

Fig.5. Typical output characteristics, Tj = 25 ˚C.
	ID = f(VDS); parameter VGS
RDS(ON) / Ohm					BUK455-50A
0.20
4.5	5	5.5	6	6.5	7
					7.5
0.15						8
0.10
0.05						10
					VGS / V =	20
0
0		20		40	60	80
				ID / A

Fig.6. Typical on-state resistance, Tj = 25 ˚C. RDS(ON) = f(ID); parameter VGS

April 1993

3

Rev 1.100