Philips 74HCT4316PW, 74HCT4316N, 74HCT4316DB, 74HC4316U, 74HC4316PW Datasheet

INTEGRATED CIRCUITS

DATA SHEET

For a complete data sheet, please also download:

∙The IC06 74HC/HCT/HCU/HCMOS Logic Family Specifications

∙The IC06 74HC/HCT/HCU/HCMOS Logic Package Information

∙The IC06 74HC/HCT/HCU/HCMOS Logic Package Outlines

74HC/HCT4316

Quad bilateral switches

Product specification			September 1993
File under Integrated Circuits, IC06

Philips Semiconductors	Product specification
Quad bilateral switches	74HC/HCT4316

FEATURES

·Low “ON” resistance:

160 W (typ.) at VCC - VEE = 4.5 V 120 W (typ.) at VCC - VEE = 6.0 V 80 W (typ.) at VCC - VEE = 9.0 V

·Logic level translation:

to enable 5 V logic to communicate with ± 5 V analog signals

·Typical “break before make” built in

·Output capability: non-standard

·ICC category: MSI

GENERAL DESCRIPTION

The 74HC/HCT4316 are high-speed Si-gate CMOS devices. They are specified in compliance with JEDEC standard no. 7A.

QUICK REFERENCE DATA

VEE = GND = 0 V; Tamb = 25 °C; tr = tf = 6 ns

The 74HC/HCT4316 have four independent analog switches. Each switch has two input/output terminals (nY, nZ) and an active HIGH select input (nS). When the

enable input (E) is HIGH, all four analog switches are turned off.

Current through a switch will not cause additional VCC current provided the voltage at the terminals of the switch is maintained within the supply voltage range;

VCC >> (VY, VZ) >> VEE. Inputs nY and nZ are electrically equivalent terminals.

VCC and GND are the supply voltage pins for the digital

control inputs (E and nS). The VCC to GND ranges are 2.0 to 10.0 V for HC and 4.5 to 5.5 V for HCT.

The analog inputs/outputs (nY and nZ) can swing between VCC as a positive limit and VEE as a negative limit.

VCC - VEE may not exceed 10.0 V.

See the “4016” for the version without logic level translation.

SYMBOL			PARAMETER	CONDITIONS	TYPICAL		UNIT
					HC	HCT
tPZH	turn “ON” time			CL = 15 pF; RL = 1 kW;
				VCC = 5 V	19	19	ns
		E	to VOS
	nS to VOS				16	17	ns
tPZL	turn “ON” time
					19	24	ns
		E	to VOS
	nS to VOS				16	21	ns
tPHZ/ tPLZ	turn “OFF” time
					20	21	ns
		E	to VOS
	nS to VOS				16	19	ns
CI	input capacitance				3.5	3.5	pF
CPD	power dissipation capacitance per switch			notes 1 and 2	13	14	pF
CS	max. switch capacitance				5	5	pF

Notes

1.CPD is used to determine the dynamic power dissipation (PD in mW):

PD = CPD ´ VCC2 ´ fi + å { (CL + CS) ´ VCC2 ´ fo } where:

fi = input frequency in MHz

fo = output frequency in MHz

å { (CL + CS) ´ VCC2 ´ fo } = sum of outputs

CL = output load capacitance in pF

CS = max. switch capacitance in pF

VCC = supply voltage in V

2. For HC the condition is VI = GND to VCC

For HCT the condition is VI = GND to VCC - 1.5 V

September 1993

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Philips Semiconductors	Product specification
Quad bilateral switches	74HC/HCT4316
ORDERING INFORMATION
See “74HC/HCT/HCU/HCMOS Logic Package Information”.

PIN DESCRIPTION

PIN NO.		SYMBOL		NAME AND FUNCTION
1, 4, 10, 13		1Z to 4Z		independent inputs/outputs
2, 3, 11, 12		1Y to 4Y		independent inputs/outputs
7				enable input (active LOW)
		E
8		GND		ground (0 V)
9		VEE		negative supply voltage
15, 5, 6, 14		1S to 4S		select inputs (active HIGH)
16		VCC		positive supply voltage

(b)

Fig.1 Pin configuration.

Fig.2 Logic symbol.

Fig.3 IEC logic symbol.

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Philips Semiconductors								Product specification
Quad bilateral switches								74HC/HCT4316
FUNCTION TABLE
		INPUTS				SWITCH
	E			nS
	L			L		off
	L			H		on
H				X		off
Note

1.H = HIGH voltage level L = LOW voltage level X = don’t care

APPLICATIONS

∙Signal gating

∙Modulation

∙Demodulation

∙Chopper

Fig.4 Functional diagram.

Fig.5 Schematic diagram (one switch).

September 1993

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Philips Semiconductors	Product specification
Quad bilateral switches	74HC/HCT4316

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

Voltages are referenced to VEE = GND (ground = 0 V)

SYMBOL	PARAMETER	MIN.	MAX.	UNIT	CONDITIONS
VCC	DC supply voltage	−0.5	+11.0	V
±IIK	DC digital input diode current		20	mA	for VI < −0.5 V or VI > VCC + 0.5 V
±ISK	DC switch diode current		20	mA	for VS < −0.5 V or VS > VCC + 0.5 V
±IS	DC switch current		25	mA	for −0.5 V < VS < VCC + 0.5 V
±IEE	DC VEE current		20	mA
±ICC;	DC VCC or GND current		50	mA
±IGND
Tstg	storage temperature range	−65	+150	°C
Ptot	power dissipation per package				for temperature range: −40 to +125 °C
					74HC/HCT
	plastic DIL		750	mW	above +70 °C: derate linearly with 12 mW/K
	plastic mini-pack (SO)		500	mW	above +70 °C: derate linearly with 8 mW/K
PS	power dissipation per switch		100	mW

Note to ratings

To avoid drawing VCC current out of terminal Z, when switch current flows in terminals Yn, the voltage drop across the bidirectional switch must not exceed 0.4 V. If the switch current flows into terminals Z, no VCC current will flow out of terminal Yn. In this case there is no limit for the voltage drop across the switch, but the voltages at Yn and Z may not exceed VCC or VEE.

RECOMMENDED OPERATING CONDITIONS

	SYMBOL	PARAMETER		74HC			74HCT			UNIT	CONDITIONS
			min.	typ.	max.	min.		typ.	max.
	VCC	DC supply voltage VCC−GND	2.0	5.0	10.0	4.5		5.0	5.5	V	see Figs 6 and 7
	VCC	DC supply voltage VCC−VEE	2.0	5.0	10.0	2.0		5.0	10.0	V	see Figs 6 and 7
	VI	DC input voltage range	GND		VCC	GND			VCC	V
	VS	DC switch voltage range	VEE		VCC	VEE			VCC	V
	Tamb	operating ambient temperature range	−40		+85	−40			+85	°C	see DC and AC
	Tamb	operating ambient temperature range	−40		+125	−40			+125	°C	CHARACTERISTICS
	tr, tf	input rise and fall times			1000					ns	VCC = 2.0 V
				6.0	500			6.0	500		VCC = 4.5 V
					400						VCC = 6.0 V
					250						VCC = 10.0 V

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