Philips 74ABT240PW, 74ABT240N, 74ABT240DB, 74ABT240D, 74ABT240-1N Datasheet

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Philips Semiconductors Product specification
74ABT240Octal inverting buffer (3-State)
2
1996 Sep 10 853–1608 17274
FEATURES
Octal bus interface
3-State buffers
Latch-up protection exceeds 500mA per Jedec Std 17
ESD protection exceeds 2000 V per MIL STD 883 Method 3015
and 200 V per Machine Model
Power-up 3-State
Live insertion/extraction permitted
DESCRIPTION
The 74ABT240 high-performance BiCMOS device combines low static and dynamic power dissipation with high speed and high output drive.
The 74ABT240 device is an octal inverting buffer that is ideal for driving bus lines. The device features two Output Enables (1OE
,
2OE
), each controlling four of the 3-State outputs.
QUICK REFERENCE DATA
SYMBOL PARAMETER
CONDITIONS
T
amb
= 25°C; GND = 0V
TYPICAL UNIT
t
PLH
t
PHL
Propagation delay nAx to nY
x
CL = 50pF; VCC = 5V 3.1 ns
C
IN
Input capacitance VI = 0V or V
CC
4 pF
C
OUT
Output capacitance Outputs disabled; VO = 0V or V
CC
7 pF
I
CCZ
Total supply current Outputs disabled; VCC =5.5V 50 µA
ORDERING INFORMATION
PACKAGES TEMPERATURE RANGE OUTSIDE NORTH AMERICA NORTH AMERICA DWG NUMBER
20-Pin Plastic DIP –40°C to +85°C 74ABT240 N 74ABT240 N SOT146-1 20-Pin plastic SO –40°C to +85°C 74ABT240 D 74ABT240 D SOT163-1 20-Pin Plastic SSOP Type II –40°C to +85°C 74ABT240 DB 74ABT240 DB SOT339-1 20-Pin PlasticTSSOP Type I –40°C to +85°C 74ABT240 PW 74ABT240PW DH SOT360-1
PIN DESCRIPTION
PIN
NUMBER
SYMBOL NAME AND FUNCTION
2, 4, 6, 8 1A0 – 1A3 Data inputs
11, 13, 15,
17
2A0 – 2A3 Data inputs
18, 16, 14,
12
1Y0 – 1Y3 Data outputs
9, 7, 5, 3 2Y0 – 2Y3 Data outputs
1, 19 1OE, 2OE Output enables
10 GND Ground (0V) 20 V
CC
Positive supply voltage
PIN CONFIGURATION
1 2 3 4 5 6 7 8 9
10 11
12
13
14
15
16
17
18
19
20
1OE 1A0 2Y
0 1A1 2Y
1
1A2 2Y
2
1A3 2Y
3 1Y3
GND
2A2
1Y
2
2A1
1Y
1
2A0
1Y
0
2OE
V
CC
2A3
SA00034
Philips Semiconductors Product specification
74ABT240Octal inverting buffer (3-State)
1996 Sep 10
3
LOGIC SYMBOL
1
1A0
2
1A1
4
1A2
6
1A3
8
2OE
19
2A0
11
13
15
17
2A1
18
2A2
16
2A3
14
12
1Y
0
1Y
1
1Y
2
1Y
3
2Y0
2Y
1
2Y
2
2Y
3
9
7
5
3
1OE
SA00035
FUNCTION TABLE
INPUTS OUTPUTS
1OE 1An 2OE 2An 1Yn 2Yn
L L L L H H L H L H L L H X H X Z Z
H =High voltage level L =Low voltage level X = Don’t care Z =High impedance ”off” state
LOGIC SYMBOL (IEEE/IEC)
EN
1
2
18
4
16
6
14
8
12
19
11
9
13
7
15
5
17
3
EN
SA00036
ABSOLUTE MAXIMUM RATINGS
1, 2
SYMBOL
PARAMETER CONDITIONS RATING UNIT
V
CC
DC supply voltage –0.5 to +7.0 V
I
IK
DC input diode current VI < 0 –18 mA
V
I
DC input voltage
3
–1.2 to +7.0 V
I
OK
DC output diode current VO < 0 –50 mA
V
OUT
DC output voltage
3
output in Off or High state –0.5 to +5.5 V
I
OUT
DC output current output in Low state 128 mA
T
stg
Storage temperature range –65 to 150 °C
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150°C.
3. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
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