Philips 74ABT2241PW, 74ABT2241N, 74ABT2241DB Datasheet

INTEGRATED CIRCUITS

74ABT2241

Octal buffer with 30 series termination resistors; (3-State)

Product specification 1996 Sep 30 IC23 Data Handbook

 

Philips Semiconductors Product specification

Octal buffer with 30 series termination resistors (3-State)

FEA TURES

•Octal bus interface

•3-State buffers

•Power-up 3-State

•Output capability: +12mA/–32mA

•Latch-up protection exceeds 500mA per Jedec Std 17

•ESD protection exceeds 2000 V per MIL STD 883 Method 3015

and 200 V per Machine Model

QUICK REFERENCE DATA

SYMBOL PARAMETER

PLH

PHL

CCZ

OUT

Propagation delay An to Yn

CL = 50pF; VCC = 5V 2.9 ns

Input capacitance VI = 0V or V Output capacitance Outputs disabled; V Total supply current Outputs disabled; VCC = 5.5V 50 µA

DESCRIPTION

The 74ABT2241 high-performance BiCMOS device combines low static and dynamic power dissipation with high speed and high output drive.

The 74ABT2241 device is an octal buffer that is ideal for driving bus lines. The device features two Output Enables (1OE controlling four of the 3-State outputs.

The 74ABT2241 is designed with 30W series resistance in both the High and Low states of the output. The design reduces line noise in applications such as memory address drivers, clock drivers, and bus receivers/transceivers.

CONDITIONS = 25°C; GND = 0V

amb

= 0V or V

74ABT2241

, 2OE), each

TYPICAL UNIT

3 pF 7 pF

ORDERING INFORMATION

PACKAGES TEMPERATURE RANGE OUTSIDE NORTH AMERICA NORTH AMERICA DWG NUMBER

20-Pin Plastic DIP –40°C to +85°C 74ABT2241 N 74ABT2241 N SOT146-1 20-Pin plastic SO –40°C to +85°C 74ABT2241 D 74ABT2241 D SOT163-1 20-Pin Plastic SSOP Type II –40°C to +85°C 74ABT2241 DB 74ABT2241 DB SOT339-1 20-Pin Plastic TSSOP Type I –40°C to +85°C 74ABT2241 PW 7ABT2241PW DH SOT360-1

PIN CONFIGURATION

1OE

1A0

2Y0

1A1

2Y1

1A2

2Y2

1A3

2Y3 1Y3

10 11

GND

2OE

1Y0

2A0

1Y1

2A1

1Y2

2A2

13 12

2A3

PIN DESCRIPTION

PIN NUMBER SYMBOL NAME AND FUNCTION

2, 4, 6, 8 1A0 – 1A3 Data inputs

17, 15, 13, 11 2A0 – 2A3 Data inputs

18, 16, 14, 12 1Y0 – 1Y3 Data outputs

3, 5, 7, 9 2Y0 – 2Y3 Data outputs

1, 19 1OE, 2OE Output enables

10 GND Ground (0V) 20 V

Positive supply voltage

SA00038

1996 Sep 30 853–1879 17325

Philips Semiconductors Product specification

Octal buffer with 30 series termination resistors (3-State)

LOGIC SYMBOL (IEEE/IEC)

2 18 4 16

6 14 812

17 3 15 5 13 7 11 9

SA00040

LOGIC SYMBOL

74ABT2241

1A0

1A1

1A2

1A3

1OE

2A0

2A1

2A2

2A3

2OE

1Y0

1Y1

1Y2

1Y3

2Y0

2Y1

2Y2

2Y3

SA00039

SCHEMATIC OF EACH OUTPUT

FUNCTION TABLE

INPUTS OUTPUTS

1OE 1An 2OE 2An 1Yn 2Yn

L L H L L L L H H H H H

H X L X Z Z

H =High voltage level

OUTPUT

L =Low voltage level X = Don’t care Z =High impedance ”off” state

GND

SA00409

ABSOLUTE MAXIMUM RATINGS

SYMBOL

OUT

stg

DC supply voltage –0.5 to +7.0 V DC input diode current VI < 0 –18 mA DC input voltage DC output diode current VO < 0 –50 mA DC output voltage DC output current output in Low state 128 mA Storage temperature range –65 to 150 °C

PARAMETER CONDITIONS RATING UNIT

1, 2

–1.2 to +7.0 V

output in Off or High state –0.5 to +5.5 V

NOTES:

1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability .

2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150°C.

3. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.

1996 Sep 30

Philips Semiconductors Product specification

VOLLow-level out ut voltage

Octal buffer with 30 series termination resistors

74ABT2241

(3-State)

RECOMMENDED OPERATING CONDITIONS

SYMBOL PARAMETER LIMITS UNIT

Min Max

V V V I

∆t/∆v Input transition rise or fall rate 0 5 ns/V

amb

DC ELECTRICAL CHARACTERISTICS

SYMBOL P ARAMETER TEST CONDITIONS T

OFF

IPU/I

OZH

OZL

CEX

CCH

CCL

CCZ

∆I

NOTES:

DC supply voltage 4.5 5.5 V Input voltage 0 V

High-level input voltage 2.0 V

Low-level Input voltage 0.8 V

High-level output current –32 mA Low-level output current 12 mA

Operating free-air temperature range –40 +85 °C

LIMITS

amb

= +25°C

amb

to +85°C

Min Typ Max Min Max

Input clamp voltage VCC = 4.5V; IIK = –18mA –0.9 –1.2 –1.2 V

VCC = 4.5V; IOH = –3mA; VI = VIL or V

High-level output voltage VCC = 5.0V; IOH = –3mA; VI = VIL or V

VCC = 4.5V; IOH = –32mA; VI = VIL or V

VCC = 4.5V; IOL = 5mA; VI = VIL or V VCC = 4.5V; IOL = 12mA; VI = VIL or V

Input leakage current VCC = 5.5V; VI = GND or 5.5V ±0.01 ±1.0 ±1.0 µA

2.5 2.9 2.5 V

3.0 3.4 3.0 V

2.0 2.4 2.0 V

0.32 0.55 0.55 V

0.8 0.8 V

Power-off leakage current VCC = 0.0V; VI or VO ≤ 4.5V ±5.0 ±100 ±100 µA Power-up/down 3-State

output current

3-State output High current VCC = 5.5V; VO = 2.7V; VI = VIL or V 3-State output Low current VCC = 5.5V; VO = 0.5V; VI = VIL or V Output High leakage current VCC = 5.5V; VO = 5.5V; VI = GND or V Output current

Quiescent supply current VCC = 5.5V; Outputs Low, VI = GND or V

Additional supply current per input pin

VCC = 2.0V; VO = 0.5V; VI = GND or VCC;

= VCC; VOE = GND

±5.0 ±50 ±50 µA

5.0 50 50 µA

–5.0 –50 –50 µA

5.0 50 50 µA VCC = 5.5V; VO = 2.5V –50 –100 –180 –50 –180 mA VCC = 5.5V; Outputs High, VI = GND or V

VCC = 5.5V; Outputs 3–State;

= GND or V

Outputs enabled, one input at 3.4V , other inputs at V

or GND; VCC = 5.5V

Outputs 3-State, one data input at 3.4V , other inputs at V

or GND; VCC = 5.5V

Outputs 3-State, one enable input at 3.4V , other inputs at V

or GND; VCC = 5.5V

50 250 250 µA 24 30 30 mA

50 250 250 µA

0.5 1.5 1.5 mA

50 250 250 µA

0.5 1.5 1.5 mA

= –40°C

UNIT

1996 Sep 30

+ 8 hidden pages