Philips 74ABT2240PW, 74ABT2240N, 74ABT2240DB, 74ABT2240D Datasheet

74ABT2240
Octal inverting buffer with 30 series termination resistors (3-State)
Product specification Supersedes data of 1996 Oct 08 IC23 Data Handbook
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1998 Jan 16
Philips Semiconductors Product specification
Octal inverting buffer with 30 series termination resistors (3-State)
FEA TURES
Octal bus interface
3-State buffers
Live insertion/extraction permitted
Outputs include series resistance of 30, making external
termination resistors unnecessary
Output capability: +12mA/–32mA
Latch-up protection exceeds 500mA per Jedec Std 17
ESD protection exceeds 2000 V per MIL STD 883 Method 3015
and 200 V per Machine Model
Power-up 3-State
Same part as 74ABT240-1
QUICK REFERENCE DATA
SYMBOL PARAMETER
C
t
PLH
t
PHL
C
OUT
I
CCZ
IN
Propagation delay An to Yn
CL = 50pF; VCC = 5V
Input capacitance VI = 0V or V Output capacitance Outputs disabled; VO = 0V or V Total supply current Outputs disabled; VCC = 5.5V 50 µA
DESCRIPTION
The 74ABT2240 high-performance BiCMOS device combines low static and dynamic power dissipation with high speed.
The 74ABT2240 device is an octal inverting buffer that is ideal for driving bus lines. The device features two Output Enables (1OE
), each controlling four of the 3-State outputs.
2OE The 74ABT2240 is designed with 30 series resistance in both the
High and Low states of the output. This design reduces line noise in applications such as memory address drivers, clock drivers and bus receivers/transmitters.
The 74ABT2240 is the same as the 74ABT240-1. The part number has been changed to reflect industry standards.
CONDITIONS
T
= 25°C; GND = 0V
amb
CC
CC
74ABT2240
TYPICAL UNIT
2.8
4.3 3 pF 7 pF
ns
,
ORDERING INFORMATION
PACKAGES TEMPERATURE RANGE OUTSIDE NORTH AMERICA NORTH AMERICA DWG NUMBER
20-Pin Plastic DIP –40°C to +85°C 74ABT2240 N 74ABT2240 N SOT146-1 20-Pin plastic SO –40°C to +85°C 74ABT2240 D 74ABT2240 D SOT163-1 20-Pin Plastic SSOP Type II –40°C to +85°C 74ABT2240 DB 74ABT2240 DB SOT339-1 20-Pin Plastic TSSOP Type I –40°C to +85°C 74ABT2240 PW 7ABT2240PW DH SOT360-1
PIN CONFIGURATION
1
1OE
2
1A0
3
2Y
0
4
1A1
5
2Y1
6
1A2
7
2Y
2
8
1A3
9
2Y
31Y3
10 11
GND
20
V
CC
19
2OE
18
1Y0
17
2A0
16
1
1Y
15
2A1
14
2
1Y
13
2A2
12
2A3
PIN DESCRIPTION
PIN NUMBER SYMBOL NAME AND FUNCTION
2, 4, 6, 8 1A0 – 1A3 Data inputs 11, 13, 15, 17 2A0 – 2A3 Data inputs 18, 16, 14, 12 1Y0 – 1Y3 Data outputs
9, 7, 5, 3 2Y0 – 2Y3 Data outputs
1, 19 1OE, 2OE Output enables
10 GND Ground (0V) 20 V
CC
Positive supply voltage
SA00034
1998 Jan 16 853-1626 18865
2
Philips Semiconductors Product specification
Octal inverting buffer with 30 series termination resistors (3-State)
LOGIC SYMBOL
1A0
2
1A1
4
1A2
6
1A3
8
1OE
1
2A0
17
2A1
15
2A2
13
2A3
11
2OE
19
LOGIC SYMBOL (IEE/IEC)
1Y
0
1
1Y
1Y
2
1Y
3
2Y0
1
2Y
2
2Y
2Y
3
SA00035
18
16
14
12
3
5
7
9
FUNCTION TABLE
1OE 1An 2OE 2An 1Yn 2Yn
L L L L H H L H L H L L
H X H X Z Z
H =High voltage level L =Low voltage level X = Don’t care Z =High impedance ”off” state
SCHEMATIC OF EACH OUTPUT
74ABT2240
INPUTS OUTPUTS
V
CC
1
EN
2 4 6 8
19
17 15 13 11
EN
ABSOLUTE MAXIMUM RA TINGS
18 16 14 12
GND
3 5 7 9
SA00036
1, 2
OUTPUT
SA00030
SYMBOL PARAMETER CONDITIONS RATING UNIT
V
I
V
I V
I
OK OUT
OUT
T
CC IK
stg
DC supply voltage –0.5 to +7.0 V DC input diode current VI < 0 –18 mA
I
DC input voltage
3
–1.2 to +7.0 V DC output diode current VO < 0 –50 mA DC output voltage
3
output in Off or High state –0.5 to +5.5 V DC output current output in Low state 128 mA Storage temperature range –65 to 150 °C
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability .
2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150°C.
3. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
1998 Jan 16
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