Philips 1PS76SB40 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
k, halfpage
M3D049
1PS76SB40
Schottky barrier diode
Product specification
Supersedes data of 1998 Jul 16
1999 Apr 26
Philips Semiconductors Product specification
Schottky barrier diode 1PS76SB40
FEATURES
• Low forward voltage
• Guard ring protected
DESCRIPTION
Planar Schottky barrier diode encapsulated in a SOD323 very small plastic
SMD package.
• Very small plastic SMD package
• Low diode capacitance.
handbook, 4 columns
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APPLICATIONS
• Ultra high-speed switching
• Voltage clamping
MAM283
• Protection circuits
• Blocking diodes.
Marking code: S4.
Fig.1 Simplified outline (SOD323) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
I
F
I
FRM
I
FSM
T
T
T
R
stg
j
amb
continuous reverse voltage − 40 V
continuous forward current − 120 mA
repetitive peak forward current tp≤ 1s; δ≤0.5 − 120 mA
non-repetitive peak forward current tp<10ms − 200 mA
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
1999 Apr 26 2
Philips Semiconductors Product specification
Schottky barrier diode 1PS76SB40
ELECTRICAL CHARACTERISTICS
T
=25°C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
F
I
R
C
d
Note
1. Pulse test: t
THERMAL CHARACTERISTICS
continuous forward voltage see Fig.2
I
= 1 mA 380 mV
F
I
= 10 mA 500 mV
F
=40mA 1 V
I
F
continuous reverse current VR= 30 V; note 1; see Fig.3 1 µA
V
= 40 V; note 1; see Fig.3 10 µA
R
diode capacitance VR= 0 ; f = 1 MHz; see Fig.5 5 pF
= 300 µs; δ = 0.02.
p
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 450 K/W
Note
1. Refer to SOD323 standard mounting conditions.
1999 Apr 26 3
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