Philips 1PS74SB23 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
k, halfpage
M3D302
1PS74SB23
Schottky barrier diode
Product specification
1999 Apr 26
Philips Semiconductors Product specification
Schottky barrier diode 1PS74SB23
FEATURES
• Ultra fast switching speed
• Low forward voltage
• Fast recovery time
• Guard ring protected
• Small plastic SMD package
• Capability of absorbing very high
surge current.
APPLICATIONS
• Rectification
• Circuit protection
• Polarity protection
• Switched-mode power supplies.
DESCRIPTION
Planar Schottky barrier diode
encapsulated in an SC-74 (SOT457)
small plastic SMD package.
PINNING
Marking code: P1.
PIN DESCRIPTION
1 anode
2 cathode
3 anode
4 anode
5 cathode
6 anode
handbook, halfpage
132
Top view
56
4
2, 5
MAM421
1, 3,
4, 6
Fig.1 Simplified outline SC-74 (SOT457) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
R
I
F
I
FSM
continuous reverse voltage − 25 V
continuous forward current − 1A
non-repetitive peak forward current tp= 8.3 ms; half sinewave;
−
25 A
JEDEC method; note 1
I
RSM
T
T
stg
j
non-repetitive peak reverse current tp= 100 µs
−
0.5 A
storage temperature −65 +150 °C
junction temperature − 125 °C
Note
1. Pins 1, 3, 4 and 6 are connected in parallel; pins 2 and 5 are connected in parallel.
1999 Apr 26 2
Philips Semiconductors Product specification
Schottky barrier diode 1PS74SB23
ELECTRICAL CHARACTERISTICS
T
=25°C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
F
I
R
C
d
Note
1. Pulse test: t
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
forward voltage IF= 100 mA
I
=1A
F
reverse current VR= 20 V; note 1; see Fig.3
= 25 V; note 1; see Fig.3
V
R
diode capacitance f = 1 MHz; VR= 4 V; see Fig.4
= 300 µs; δ = 0.02.
p
260 300 mV
400 450 mV
80 500
− 1
µA
mA
100 − pF
thermal resistance from junction to ambient note 1 250 K/W
Note
1. Refer to SC-74 (SOT457) standard mounting conditions.
1999 Apr 26 3
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