Philips 1PS70SB85, 1PS70SB82 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D102
1PS70SB82; 1PS70SB84;
1PS70SB85; 1PS70SB86
Schottky barrier (double) diodes
Product specification 2001 Jan 18
Philips Semiconductors Product specification
Schottky barrier (double) diodes
FEATURES
• Low forward voltage
• Very small SMD plastic package
• Low diode capacitance.
APPLICATIONS
• UHF mixers
• Sampling circuits
• Modulators
• Phase detectors.
DESCRIPTION
Planar Schottky barrier diodes
encapsulated in a SOT323 (SC-70)
very small plastic SMD package.
Single diodesand double diodes with
different pinning are available. ESD
sensitive device, observe handling
precautions.
MARKING
TYPE NUMBER
MARKING
CODE
1PS70SB82 88
1PS70SB84 87
1PS70SB85 85
1PS70SB86 86
PINNING
PIN SYMBOL
1PS70SB82
1a
2 n.c.
3k
1PS70SB84
1a
2k
3k
1PS70SB85
1a
2a
3k
1PS70SB86
1k
2k
3a
handbook, 2 columns
1
2
and a
1
1
2
and k
1
1
2
and a
1
1PS70SB82; 1PS70SB84;
1PS70SB85; 1PS70SB86
3
12
Fig.2 1PS70SB82 single
diode configuration
(symbol).
2
12
2
3
Fig.3 1PS70SB84 diode
configuration (symbol).
2
12
3
Fig.4 1PS70SB85 diode
3
configuration (symbol).
n.c.
MLC357
MLC358
MLC359
12
Top view
Fig.1 Simplified outline
(SOT323; SC-70) and
pin configuration.
2001 Jan 18 2
3
MBC870
12
MLC360
Fig.5 1PS70SB86 diode
configuration (symbol).
Philips Semiconductors Product specification
Schottky barrier (double) diodes
1PS70SB82; 1PS70SB84;
1PS70SB85; 1PS70SB86
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER MIN. MAX. UNIT
Per diode
V
R
I
F
T
stg
T
j
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Refer to (SOT323; SC-70) standard mounting conditions.
ELECTRICAL CHARACTERISTICS
T
=25°C; unless otherwise specified.
amb
continuous reverse voltage − 15 V
continuous forward current − 30 mA
storage temperature −65 +150 °C
junction temperature − 125 °C
thermal resistance from junction to ambient note 1 625 K/W
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Per diode
V
F
r
D
I
R
C
d
forward voltage see Fig.6
I
=1mA − 340 mV
F
I
=30mA − 700 mV
F
differential diode forward resistance f = 1 MHz; IF= 5 mA; see Fig.9 12 −Ω
continuous reverse current VR= 1 V; note 1; see Fig.7 − 0.2 µA
diode capacitance VR= 0; f = 1 MHz; see Fig.8 1 − pF
Note
1. Pulsed test: t
= 300 µs; δ = 0.02.
p
2001 Jan 18 3
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