DISCRETE SEMICONDUCTORS
DATA SHEET
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M3D102
1PS70SB40 series
Schottky barrier (double) diodes
Product specification |
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1999 Apr 26 |
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Supersedes data of 1997 Oct 28 |
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Philips Semiconductors |
Product specification |
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Schottky barrier (double) diodes |
1PS70SB40 series |
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FEATURES
∙Low forward voltage
∙Guard ring protected
∙Very small SMD package
∙Low diode capacitance.
APPLICATIONS
∙Ultra high-speed switching
∙Voltage clamping
∙Protection circuits
∙Blocking diodes.
DESCRIPTION
Planar Schottky barrier diodes encapsulated in an SC-70 very small plastic SMD package. Single diodes and double diodes with different pinning are available.
MARKING
TYPE NUMBER |
MARKING |
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CODE (1) |
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1PS70SB40 |
6 3 |
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1PS70SB44 |
6 4 |
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1PS70SB45 |
6 5 |
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1PS70SB46 |
6 6 |
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Note
1.= -: Made in Hong Kong.= t: Made in Malaysia.
PINNING
PIN |
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1PS70SB.. |
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40 |
44 |
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45 |
46 |
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1 |
a1 |
a1 |
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a1 |
k1 |
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2 |
n.c. |
k2 |
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a2 |
k2 |
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3 |
k1 |
k1, a2 |
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k1, k2 |
a1, a2 |
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Top view
MGD765
Fig.1 Simplified outline (SC-70) and pin configuration.
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1 |
2 |
n.c.
MLC357
Fig.2 1PS70SB40 single diode configuration (symbol).
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1 
2
MLC358
Fig.3 1PS70SB44 diode configuration (symbol).
3
1 
2
MLC359
Fig.4 1PS70SB45 diode configuration (symbol).
3
1 
2
MLC360
Fig.5 1PS70SB46 diode configuration (symbol).
1999 Apr 26 |
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Philips Semiconductors |
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Product specification |
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Schottky barrier (double) diodes |
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1PS70SB40 series |
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LIMITING VALUES |
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In accordance with the Absolute Maximum Rating System (IEC 134). |
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SYMBOL |
PARAMETER |
CONDITIONS |
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MIN. |
MAX. |
UNIT |
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Per diode |
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VR |
continuous reverse voltage |
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− |
40 |
V |
IF |
continuous forward current |
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120 |
mA |
IFRM |
repetitive peak forward current |
tp ≤ 1 s; δ ≤ 0.5 |
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120 |
mA |
IFSM |
non-repetitive peak forward current |
tp < 10 ms |
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− |
200 |
mA |
Tstg |
storage temperature |
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−65 |
+150 |
°C |
Tj |
junction temperature |
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150 |
°C |
Tamb |
operating ambient temperature |
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−65 |
+150 |
°C |
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL |
PARAMETER |
CONDITIONS |
MAX. |
UNIT |
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Per diode |
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VF |
continuous forward voltage |
see Fig.6 |
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IF = 1 mA |
380 |
mV |
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IF = 10 mA |
500 |
mV |
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IF = 40 mA |
1 |
V |
IR |
continuous reverse current |
VR = 30 V; note 1; see Fig.7 |
1 |
μA |
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VR = 40 V; note 1; see Fig.7 |
10 |
μA |
τ |
charge carrier life time |
IF = 5 mA; Krakauer method |
100 |
ps |
Cd |
diode capacitance |
VR = 0; f = 1 MHz; see Fig.9 |
5 |
pF |
Note
1. Pulse test: tp = 300 μs; δ = 0.02.
THERMAL CHARACTERISTICS
SYMBOL |
PARAMETER |
CONDITIONS |
VALUE |
UNIT |
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Rth j-a |
thermal resistance from junction to ambient |
note 1 |
625 |
K/W |
Note |
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1. Refer to SC70 standard mounting conditions.
1999 Apr 26 |
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