Philips 1PS59SB20 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

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M3D114

1PS59SB20

Schottky barrier diode

Product specification

1998 Jul 28

Philips Semiconductors Product specification

Schottky barrier diode 1PS59SB20

FEATURES

• Ultra fast switching speed

• Low forward voltage

DESCRIPTION

Planar Schottky barrier diode with an integrated guard ring for stress protection
in an SC-59 small SMD plastic package.

• Guard ring protected

• Small SMD package.

book, halfpage

APPLICATIONS

• High-speed switching

• Voltage clamping

• Protection circuits.

PINNING

Top view

PIN DESCRIPTION

1 anode
2 not connected

Marking code: 20.

Fig.1 Simplified outline (SC-59) and symbol.

3 cathode

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

3

3

12

n.c.

MLC357

21

MSA314

SYMBOL PARAMETER MIN. MAX. UNIT

V

R

I

F

I

FSM

T

stg

T

j

continuous reverse voltage
continuous forward current −

non-repetitive peak forward current
storage temperature
junction temperature

−

−

−65

−

40 V
500 mA
2A
+150 °C
125 °C

1998 Jul 28 2

Philips Semiconductors Product specification

Schottky barrier diode 1PS59SB20

ELECTRICAL CHARACTERISTICS

T

=25°C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

F

I

R

C

d

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-a

Note

1. Refer to SC-59 standard mounting conditions.

forward voltage IF= 500 mA; see Fig.2
reverse current VR= 35 V; see Fig.3

=35V;Tj= 100 °C; see Fig.3

V

R

diode capacitance f = 1 MHz; VR= 0; see Fig.4

− 550 mV

− 100

− 10

µA

mA

60 90 pF

thermal resistance from junction to ambient note 1 500 K/W

1998 Jul 28 3