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Philips Semiconductors Product specification
Schottky barrier diode 1PS59SB20
FEATURES
• Ultra fast switching speed
• Low forward voltage
DESCRIPTION
Planar Schottky barrier diode with an integrated guard ring for stress protection
in an SC-59 small SMD plastic package.
• Guard ring protected
• Small SMD package.
book, halfpage
APPLICATIONS
• High-speed switching
• Voltage clamping
• Protection circuits.
PINNING
Top view
PIN DESCRIPTION
1 anode
2 not connected
Marking code: 20.
Fig.1 Simplified outline (SC-59) and symbol.
3 cathode
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
3
3
12
n.c.
MLC357
21
MSA314
SYMBOL PARAMETER MIN. MAX. UNIT
V
R
I
F
I
FSM
T
stg
T
j
continuous reverse voltage
continuous forward current −
non-repetitive peak forward current
storage temperature
junction temperature
−
−
−65
−
40 V
500 mA
2A
+150 °C
125 °C
1998 Jul 28 2
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Philips Semiconductors Product specification
Schottky barrier diode 1PS59SB20
ELECTRICAL CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
F
I
R
C
d
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Refer to SC-59 standard mounting conditions.
forward voltage IF= 500 mA; see Fig.2
reverse current VR= 35 V; see Fig.3
=35V;Tj= 100 °C; see Fig.3
V
R
diode capacitance f = 1 MHz; VR= 0; see Fig.4
− 550 mV
− 100
− 10
µA
mA
60 90 pF
thermal resistance from junction to ambient note 1 500 K/W
1998 Jul 28 3