PANJIT TSP140C, TSP190C, TSP160C, TSP058C, TSP320C Datasheet

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PAGE 1
Ver: June 2001
PRELIMINARY
TSP058SC - TSP320SC
THYRISTOR
TSP058SC - TSP320SC
SURF ACE MOUNT BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR DEVICE
FEATURES
• Designed for telecommunications applications such as line cards, modems, PBX, FAX, LAN,VHDSL
• Helps meet standards such as GR1089, ITU K.20, IEC950, UL1459&50, FCC part 68
• Low capacitance, High surge (A, B, C rating available), precise voltage limiting, Long life
SUMMARY ELECTRICAL CHARACTERISTICS
SMB/DO-214AA
rebmuNtraP
evititepeRdetaR
etatS-ffOkaeP
egatloV
revokaerB
egatloV
etatS-nO
egatloV
evititepeR
etatS-ffOkaeP
tnerruC
revokaerB
tnerruC
gnidloH
tenrruC
ecnaticapaCetatS-ffO
Vm51=caV,zHM1=f( RMS)
.xaM .xaM .xaM .xaM .xaM .niM .pyT .xaM .pyT .xaM
VDRM VBO I@ BO VT A1@ IDRM I BO IH CO V0@
cd
CO V05@
cd
V V V
µA
Am Am Fp Fp CS850PST 85 77 5 5 008 051 58 501 53 34 CS560PST56885 5 008051081014304 CS570PST 57 89 5 5 008 051 87 59 03 73 CS090PST0903155 00805107083243 CS021PST 021 061 5 5 008 051 36 97 02 92 CS041PST04108155 00805116879182 CS061PST 061 022 5 5 008 051 85 57 91 72 CS091PST09106255 00805175179162 CS022PST 022 003 5 5 008 051 75 17 81 62 CS572PST57205355 00805165078152 CS023PST 023 004 5 5 008 051 65 07 71 42
setoN)3,1()6,5,3()3()3()3()3,2()3()3()3()3(
NOTES:
1. Specific V
DRM
values are available by request.
2. Specific IH values are available by request.
3. All ratings and characteristics are at 25 °C unless otherwise specified.
4. V
DRM
applies for the life of the device. I
DRM
will be in spec during and following operation of the device.
5. V
BO1
is at 100V/msec, ISC =10Apk, VOC=1KVpk, 10/1000 Waveform
6. V
BO2
is at f = 60 Hz, ISC = 1 A
(RMS)
, Vac = 1KV
(RMS)
, RL = 1 K, 1/2 AC cycle
PAGE 2
Ver: June 2001
PRELIMINARY
TSP058SC - TSP320SC
THYRISTOR
TSP058SC - TSP320SC
SELECTION GUIDE
Follow these steps to select the proper Thyristor surge protector for your application:
1. Define the operating parameters for the circuit:
• Ambient operating temperature range
• Maximum telephone line operating current (highest battery and shortest copper loop)
• Maximum operating voltage: (Maximum DC bias + peak ringing voltage)
• Maximum surge current
• System voltage damage threshold
• Select device with an off-state voltage rating (V
DRM
) above the maximum operating voltage at the minimum operating temperature.
3. Select surge current ratings (I
PPS
and I
TSM
) those which the application must withstand.
4. Verify that the minimum holding current of the device at the maximum ambient temperature is above the maximum dc current of the system.
5. Verify that the maximum breakover voltage of the device is below the system damage threshold.
6. Verify that the circuit's ambient operating temperatures are within the device's operating temperature range.
7. Verify that the device's dimensions fit the application's space considerations.
8. Independently evaluate and test the suitability and performance of the device in the application
gnitaR tnerruCesluPkaePevititepeR-noN
kaePevititepeR-noN
tnerruCegruSetatS-nO
lobmyS I
PPS
I
TSM
evaWtnerruCtiucriC-trohS01/2 µs02/8 µs061/01 µs013/5 µs065/01 µs0001/01 µs
A06
evaWegatloVtiucriC-nepO 01/2 µs 05/2.1 µs 061/01 µs 007/01 µs 065/01 µs 0001/01 µs
eulaV
A005A053A002A051A521A001
setoN )6,5,4,2,1( )4,3,2,1(
MAXIMUM SURGE RATINGS (TJ = 25 ºC UNLESS OTHERWISE NOTED)
Notes:
1. Thermal accumulation between successive surge tests is not allowed.
2. The device under test initially must be in thermal equilibrium with TJ = 25 °C.
3. Test at 1 cycle, 60 Hz.
4. Surge ratings are non-repetitive because instantaneous junction temperatures may exceed the maximum rated TJ. Nevertheless, devices will survive many surge applications without degradation. Surge capability will not degrade over a device's typical operating life.
5. Adjust the surge generator for optimum current-wave accuracy when both voltage and current wave specifications cannot be exactly met. The current wave is more important than the voltage wave for accurate surge evaluation.
6. The waveform is defined as A/B ms where: A: (Virtual front time) = 1.25 X Rise time = 1.25 X (Tb - Ta) B (Duration time to 50% level of Ipps) = T1 - T
0
0%
20%
40%
60%
80%
100%
Time
% Ipps
TbTa T1To
PAGE 3
Ver: June 2001
PRELIMINARY
TSP058SC - TSP320SC
THYRISTOR
TSP058SC - TSP320SC
gnitaR lobmyS eulaV
tinU
egnaRerutarepmeTnoitcnuJegarotS TSTG 051ot05-
O
C
egnaRerutarepmeTnoitcnuJgnitarepOT
J 051ot04-
O
C
egnaRerutarepmeTtneibmAgnitarepO Ta 56ot04-
O
C
Notes:
PCB board mounted on minimum foot print.
MAXIMUM THERMAL RATINGS
citsiretcarahC lobmyS eulaV tinU
TsdaeLotnoitcnuJecnatsiseRlamrehT
L
ottnecajdabatno
.sezisdaplacitnediotderedlossdaelhtoB.citsalp
R
θ LJ
02.xaM
O
W/C
THERMAL CHARACTERISTICS
Notes:
The junction to lead thermal resistance represents a minimum limiting value with both leads soldered to a large near-infinite heatsink. The
junction to ambient thermal resistance depends strongly on board mounting conditions and typically is 3 to 6 times higher than the junction
to lead resistance. The data shown is to be used as guideline values for preliminary engineering.
ELECTRICAL CHARACTERISTICS (TC = 25°C UNLESS OTHERWISE NOTED)
sretemaraP snoitidnoCtseT lobmyS .niM .xaM tinU
kaePevititepeR
tnerruCetatS-ffO
V
D Vdetar=
DRM
I
DRM
5
µA
tnerruCrevokaerB I,zH06=f
SC
V,smrA1= ca R,smrVK1=
L
K1= elcycCA2/1, I OB 008 Am
1tnerruCgnidloH0001/01 µ I,mrofevaws
CS V,A01= CO R,V26=
L
004= IH 051Am
egatloVetatS-nO I
T
003=wT,A1= µ eslup1,s VT 5 V
Notes: Specific IH values are available by request.
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