PANJIT TSP065C Datasheet

PAGE 1

Ver: June 2001

PRELIMINARY

TSP058C - TSP320C

THYRISTOR

TSP058C - TSP320C

AXIAL LEAD BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR DEVICE

FEATURES

• Protects by limiting voltages and shunting surge currents away from sensitive circuits

• Designed for telecommunications applications such as line cards, modems, PBX, FAX,
LAN,VHDSL

• Helps meet standards such as GR1089, ITU K.20, IEC950, UL1459&50, FCC part 68

• Low capacitance, High surge (A, B, C rating available), precise voltage limiting, Long life

SUMMARY ELECTRICAL CHARACTERISTICS

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revokaerB

tnerruC

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VDRM VBO I@ BO VT A1@ IDRM I BO IH CO V0@

cd

CO V05@

cd

V V V

µA

Am Am Fp Fp
C850PST 85 77 5 5 008 051 58 501 53 34
C560PST56885 5 008051081014304
C570PST 57 89 5 5 008 051 87 59 03 73
C090PST0903155 00805107083243
C021PST 021 061 5 5 008 051 36 97 02 92
C041PST04108155 00805116879182
C061PST 061 022 5 5 008 051 85 57 91 72
C091PST09106255 00805175179162
C022PST 022 003 5 5 008 051 75 17 81 62
C572PST57205355 00805165078152
C023PST 023 004 5 5 008 051 65 07 71 42

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NOTES:

1. Specific V

DRM

values are available by request.

2. Specific IH values are available by request.

3. All ratings and characteristics are at 25 °C unless otherwise specified.

4. V

DRM

applies for the life of the device. I

DRM

will be in spec during and following operation of the device.

5. V

BO1

is at 100V/msec, ISC =10Apk, VOC=1KVpk, 10/1000 Waveform

6. V

BO2

is at f = 60 Hz, ISC = 1 A

(RMS)

, Vac = 1KV

(RMS)

, RL = 1 KΩ, 1/2 AC cycle

PAGE 2

Ver: June 2001

PRELIMINARY

TSP058C - TSP320C

THYRISTOR

TSP058C - TSP320C

SELECTION GUIDE

Follow these steps to select the proper Thyristor surge protector for your application:

1. Define the operating parameters for the circuit:

• Ambient operating temperature range

• Maximum telephone line operating current (highest battery and shortest copper loop)

• Maximum operating voltage: (Maximum DC bias + peak ringing voltage)

• Maximum surge current

• System voltage damage threshold

• Select device with an off-state voltage rating (V

DRM

) above the maximum operating voltage at the minimum operating temperature.

3. Select surge current ratings (I

PPS

and I

TSM

) ≥ those which the application must withstand.

4. Verify that the minimum holding current of the device at the maximum ambient temperature is above the maximum dc current of the
system.

5. Verify that the maximum breakover voltage of the device is below the system damage threshold.

6. Verify that the circuit's ambient operating temperatures are within the device's operating temperature range.

7. Verify that the device's dimensions fit the application's space considerations.

8. Independently evaluate and test the suitability and performance of the device in the application

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PPS

I

TSM

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A06

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A005A053A002A051A521A001

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MAXIMUM SURGE RATINGS (TJ = 25 ºC UNLESS OTHERWISE NOTED)

Notes:

1. Thermal accumulation between successive surge tests is
not allowed.

2. The device under test initially must be in thermal
equilibrium with TJ = 25 °C.

3. Test at 1 cycle, 60 Hz.

4. Surge ratings are non-repetitive because instantaneous
junction temperatures may exceed the maximum rated TJ.
Nevertheless, devices will survive many surge applications
without degradation. Surge capability will not degrade over
a device's typical operating life.

5. Adjust the surge generator for optimum current-wave
accuracy when both voltage and current wave
specifications cannot be exactly met. The current wave is
more important than the voltage wave for accurate surge
evaluation.

6. The waveform is defined as A/B ms where:
A: (Virtual front time) = 1.25 X Rise time = 1.25 X (Tb - Ta)
B (Duration time to 50% level of Ipps) = T1 - T

0

0%

20%

40%

60%

80%

100%

Time

% Ipps

TbTa T1To

PAGE 3

Ver: June 2001

PRELIMINARY

TSP058C - TSP320C

THYRISTOR

TSP058C - TSP320C

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C

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C

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C

Notes:

PCB board mounted on minimum foot print.

MAXIMUM THERMAL RATINGS

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W/C

THERMAL CHARACTERISTICS

Notes:

The junction to lead thermal resistance represents a minimum limiting value with both leads soldered to a large near-infinite heatsink. The

junction to ambient thermal resistance depends strongly on board mounting conditions and typically is 3 to 6 times higher than the junction

to lead resistance. The data shown is to be used as guideline values for preliminary engineering.

ELECTRICAL CHARACTERISTICS (TC = 25°C UNLESS OTHERWISE NOTED)

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tnerruCetatS-ffO

V

D Vdetar=

DRM

I

DRM

5

µA

tnerruCrevokaerB I,zH06=f

SC

V,smrA1= ca R,smrVK1=

L

K1= Ω elcycCA2/1, I OB 008 Am

1tnerruCgnidloH0001/01 µ I,mrofevaws

CS V,A01= CO R,V26=

L

004= Ω IH 051Am

egatloVetatS-nO I

T

003=wT,A1= µ eslup1,s VT 5 V

Notes:
Specific IH values are available by request.