Panjit 2N7002KDW Schematic [ru]
2N7002KDW
60V N-Channel Enhancement Mode MOSFET - ESD Protected
FEATURES
• R
, VGS@10V,IDS@500mA=3Ω
DS(ON)
• R
, VGS@4.5V,IDS@200mA=4Ω
DS(ON)
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Very Low Leakage Current In Off Condition
• Specially Designed for Battery Operated Systems, Solid-State Relays
Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
• ESD Protected 2KV HBM
• Lead free in comply with EU RoHS 2002/95/EC directives.
• Green molding compound as per IEC61249 Std. . (Halogen Free)
MECHANICAL DATA
• Case: SOT-363 Package
• Terminals : Solderable per MIL-STD-750,Method 2026
• Approx. Weight: 0.0002 ounces, 0.006 grams
• Marking : K27
SOT-363
0.054(1.35)
0.045(1.15)
0.030(0.75)
0.021(0.55)
0.012(0.30)
0.005(0.15)
0.087(2.20)
0.074(1.90)
0.056(1.40)
0.047(1.20)
0.010(0.25)
0.040(1.00)
0.031(0.80)
Unit inch(mm)：
MAX.
0.044(1.10)
0.018(0.45)
0.006(0.15)
0.087(2.20)
0.078(2.00)
0.010(0.25)
0.003(0.08)
Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )
PARAMETER Symbol Limit Units
Drain-Source Voltage V
Gate-Source Voltage V
Continuous D rain Current I
Pulsed Drain Current
Maximum Power Dissipation
1)
T
=25OC
A
T
=75OC
A
Operating Junction and Storage
Temperature Range
Junction-to Ambient Thermal
Resistance(PCB mounted)
2
I
P
T
J,TSTG
R
DS
GS
D
DM
D
-55 to + 150
θJA
6 5 4
6 5 4
6 5 4
1 2 3
1 2 3
1 2 3
60 V
+20 V
115 mA
800 mA
200
120
625
mW
O
O
C/W
C
Note: 1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 5 sec
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
PAGE . 1May 21.2010-REV.01
2N7002KDW
ELECTRICAL CHARACTERISTICS
Parameter Symbol Test Condition Min. Typ. Max. Units
Static
Drain-Source Breakdown
Voltage
BV
Gate Threshold Voltage V
Drain-Source On-Sta te
Resistance
Drain-Source On-Sta te
Resistance
Zero Gate Voltage Drain
Current
R
R
DS(on)
DS(on)
I
Gate Body Leakage I
Forward Transconductance g
Dynamic
Total Gate Charge Q
Turn-On Delay Time t
Turn-Off Delay Time t
Input Capacitance C
Output Capacitance C
Reverse Transfer
Capacitance
C
DSS
GS(th)
DSS
GSS
fS
g
on
off
iss
oss
rss
VGS=0V, ID=10uA 60 - - V
VDS=VGS, ID=250uA 1 - 2.5 V
VGS=4.5V, I D=200mA - - 4. 0
Ω
VGS=10V, I D=500mA - - 3.0
VDS=60V, VGS=0V --1uA
VGS=+20V, VDS=0V - - +10 uA
VDS=15V, ID=250mA 100 - - mS
VDS=15V, ID=200mA
V
=4.5V
GS
VDD=30V , RL=150Ω
I
=200mA , V
D
R
G
=10Ω
GEN
=10V
--0.8nC
--20
ns
--40
--35
VDS=25V, VGS=0V
f=1.0MH
Z
--10
pF
--5
Source-Drain Diode
Diode Forward Voltage V
Continuous Diode Forward
Current
Pulsed Diode Forward
Current
Switching
Test Circuit
V
IN
R
G
SD
I
s
I
sM
V
DD
IS=200mA , VGS=0V - 0.82 1.3 V
---115mA
---800mA
V
Gate Charge
DD
Test Circuit
R
L
V
OUT
1mA
V
GS
R
G
R
L
PAGE . 2May 21.2010-REV.01
2N7002KDW
Typical Characteristics Curves (T =25 C,unless otherwise noted)
A
O
0
0.2
0.4
0.6
0.8
1
1.2
012345
VDS- Drain-to-Source Voltage (V)
I
D
- Drain-to-Source Current (A)
VGS= 6.0~10V
5.0V
4.0V
3.0V
0
1
2
3
4
5
2345678910
V
GS
- Gate -to-Source Voltage (V)
ID=200mA
ID=500mA
0
1
2
3
4
5
0 0.2 0.4 0 .6 0.8 1
ID-DrainCurrent(A)
VGS=4.5V
VGS=10V
0.6
0.8
1
1.2
1.4
1.6
1.8
-50 -25 0 25 50 75 100 125 150
TJ- Junction Temperature (oC)
R
DS(ON)
- On- Resistance( Normalized)
VGS=10V
I
D
=500mA
Typical Characteristics Curves (T =25 C,unless otherwise noted)
V = 10V~ 6.0V
GS
O
A
5.0V
4.0V
3.0V
Fig. 1-TYPICAL FORWARD CHARACTERISTIC
FIG.1- Output Characteristic
W
1.2
V =10V
DS
V =10V
DS
V =10V
DS
1
0.8
0.6
0.4
T =25
J ℃
T =25
J ℃
T =25
0.2
- Drain Source Current (A)
D
I
0
0123456
J ℃
VGS- Gate-to-Source Voltage (V)
FIG.2- Transfer Characteristic
W
V =10V
DS(ON)
R - On-Resistance ( )
FIG.3- On Resistance vs Drain Current
GS
FIG.5- On Resistance vs Junction Temperature
I =200mA
D
DS(ON)
R - On-Resistance ( )
FIG.4- On Resistance vs Gate to Source Voltage
PAGE . 3May 21.2010-REV.01
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