Panjit 2N7002 Schematic [ru]

2N7002

60V N-Channel Enhancement Mode MOSFET

FEA TURES

• R

, VGS@10V,IDS@500mA=5

DS(ON)

• R

, VGS@4.5V,IDS@75mA=7.5

DS(ON)

0.120(3.04)

0.110(2.80)

0.006(0.15)MIN.

• Advanced Trench Process Technology

• High Density Cell Design For Ultra Low On-Resistance

• Specially Designed for Battery Operated Systems, Solid-State Relays

0.056(1.40)

0.047(1.20)

0.079(2.00)

0.070(1.80)

Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.

• Lead free in comply with EU RoHS 2011/65/EU directives

• Green molding compound as per IEC61249 Std. . (Halogen Free)

0.004(0.10)

0.000(0.00)

0.020(0.50)

0.013(0.35)

MECHANICAL DATA

• Case : SOT-23 Package

• Terminals : Solderable per MIL-STD-750,Method 2026

• Approx. Weight : 0.0003 ounces, 0.008 grams

• Marking : S72

Maximum Ratings and Thermal Characteristics (TA=25OC unless otherwise noted )

0.044(1.10)

0.035(0.90)

0.008(0.20)

0.003(0.08)

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)1

tnerruCniarDdesluP

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Note:1. Maximum DC current limited by the package

2. Surface mounted on FR4 board, t < 10 sec

T
T

egnaRerutarepmeTegarotSdnanoitcnuJgnitarepO T

2

SD

SG

D

I

MD

52=OC

A

57=OC

A

P

JT,GTS

R

D

θ AJ

06V

+ 02V

052Am

0031Am

053
012

051+ot55-

753

Wm

O

C

O

W/C

PAGE . 1August 29,2013-REV.03

2N7002

ELECTRICAL CHARACTERISTICS

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citatS

egatloVnwodkaerBecruoS-niarDVB

egatloVdlohserhTetaGV

ecnatsiseRetatS-nOecruoS-niarDR

ecnatsiseRetatS-nOecruoS-niarDR

tnerruCniarDegatloVetaGoreZI

egakaeLydoBetaGI

ecnatcudnocsnarTdrawroFg

SSD

)ht(SG

)no(SD

)no(SD

SSD

SSG

Sf

V

VSDV=SGI,

V

V

VSG=+ V,V02

V

I,V0=

SG

SG

SG

V

SD

SD

Au01=06--V

D

Au052=1-5.2V

D

I,V5.4=

Am57=--5.7

D

I,V01=

Am005=--5

D

V,V06=

V0=--1Au

SG

V0=--+001An

SD

I,V51=

Am052=002--Sm

D

cimanyD

egrahCetaGlatoTQ

egrahCniarD-etaGQ

emiTnO-nruTt

emiTffO-nruTt

g

sg

dg

no

ffo

V

I

D

I,V51=

D

R,V01=
V,Am005=
01= Ω

Am005=

V5.4=

02= Ω

L

V01=

NEG

SD

V

DD

V

DD

R

G

Ω

-6.07.0

-1.0-

CnegrahCecruoS-etaGQ

-80.0-

-951
sn

-1262

ecnaticapaCtupnIC

ecnaticapaCrefsnarTesreveRC

ssi

sso

ssr

V

V,V52=

SD

V0=

SG

HM0.1=f

Z

edoiDniarD-ecruoS

Switching

tnerruCdrawroFedoiD.xaMI

egatloVdrawroFedoiDV

s

DS

I

V

DD

---052Am

V,Am052=

S

V0=-39.02.1V

SG

Test Circuit

R

V

IN

R

G

L

V

OUT

--05

--52

--5

Gate Charge

Test Circuit

1mA

FpecnaticapaCtuptuOC

V

DD

R

V

GS

R

G

L

PAGE . 2August 29,2013-REV.03

Fig. 1-TYPICAL FORWARD CHARACTERISTIC

FIG.1- Output Characteristic

Typical Characteristics Curves (T =25 C,unless otherwise noted)

A

O

FIG.2- Transfer Characteristic

FIG.3- On Resistance vs Drain Current

FIG.4- On Resistance vs Gate to Source Voltage

FIG.5- On Resistance vs Junction Temperature

0

0.2

0.4

0.6

0.8

1

1.2

012345

VDS- Drain-to-Source Voltage (V)

I

D

- Drain-to-Source Current (A)

5.0V

4.0V

3.0V

VGS= 6.0~10V

0

0.2

0.4

0.6

0.8

1

1.2

0123456

VGS- Gate-to-Source Voltage (V)

I

D

- Drain Source Current (A)

VDS=10V

0

1

2

3

4

5

0 0.2 0.4 0.6 0.8 1 1.2

ID- Drain Current (A)

R

DS(ON)

- On-Resistance

()W

VGS=4.5V

VGS=10V

0

2

4

6

8

10

2345678910

V

GS

- Gate-to-Source Voltage (V)

R

DS(ON)

- On-Resistance

ID=500mA

o

C

T =125

J

o

C

T=25

J

()W

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

-50 -25 0 25 50 75 100 125 150

TJ- Junction Temperature (oC)

R

DS(ON)

- On-Res istanc e(Nor malized)

VGS=10V

I

D

=500mA

o

C

T=25

J

2N7002

PAGE . 3August 29,2013-REV.03