2N7002
60V N-Channel Enhancement Mode MOSFET
FEA TURES
• R
, VGS@10V,IDS@500mA=5
DS(ON)
• R
, VGS@4.5V,IDS@75mA=7.5
DS(ON)
0.120(3.04)
0.110(2.80)
0.006(0.15)MIN.
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Specially Designed for Battery Operated Systems, Solid-State Relays
0.056(1.40)
0.047(1.20)
0.079(2.00)
0.070(1.80)
Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
• Lead free in comply with EU RoHS 2011/65/EU directives
• Green molding compound as per IEC61249 Std. . (Halogen Free)
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.013(0.35)
MECHANICAL DATA
• Case : SOT-23 Package
• Terminals : Solderable per MIL-STD-750,Method 2026
• Approx. Weight : 0.0003 ounces, 0.008 grams
• Marking : S72
Maximum Ratings and Thermal Characteristics (TA=25OC unless otherwise noted )
0.044(1.10)
0.035(0.90)
0.008(0.20)
0.003(0.08)
RETEMARAPlobmyStimiLstinU
egatloVecruoS-niarD V
egatloVecruoS-etaG V
tnerruCniarDsuounitnoC I
)1
tnerruCniarDdesluP
noitapissiDrewoPmumixaM
)detnuomBCP(ecnatsiseRlamrehTtneibmAot-noitcnuJ
Note:1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 10 sec
T
T
egnaRerutarepmeTegarotSdnanoitcnuJgnitarepO T
2
SD
SG
D
I
MD
52=OC
A
57=OC
A
P
JT,GTS
R
D
θ AJ
06V
+ 02V
052Am
0031Am
053
012
051+ot55-
753
Wm
O
C
O
W/C
PAGE . 1August 29,2013-REV.03
2N7002
ELECTRICAL CHARACTERISTICS
retemaraPlobmySnoitidnoCtseT.niM.pyT.xaMstinU
citatS
egatloVnwodkaerBecruoS-niarDVB
egatloVdlohserhTetaGV
ecnatsiseRetatS-nOecruoS-niarDR
ecnatsiseRetatS-nOecruoS-niarDR
tnerruCniarDegatloVetaGoreZI
egakaeLydoBetaGI
ecnatcudnocsnarTdrawroFg
SSD
)ht(SG
)no(SD
)no(SD
SSD
SSG
Sf
V
VSDV=SGI,
V
V
VSG=+ V,V02
V
I,V0=
SG
SG
SG
V
SD
SD
Au01=06--V
D
Au052=1-5.2V
D
I,V5.4=
Am57=--5.7
D
I,V01=
Am005=--5
D
V,V06=
V0=--1Au
SG
V0=--+001An
SD
I,V51=
Am052=002--Sm
D
cimanyD
egrahCetaGlatoTQ
egrahCniarD-etaGQ
emiTnO-nruTt
emiTffO-nruTt
g
sg
dg
no
ffo
V
I
D
I,V51=
D
R,V01=
V,Am005=
01= Ω
Am005=
V5.4=
02= Ω
L
V01=
NEG
SD
V
DD
V
DD
R
G
Ω
-6.07.0
-1.0-
CnegrahCecruoS-etaGQ
-80.0-
-951
sn
-1262
ecnaticapaCtupnIC
ecnaticapaCrefsnarTesreveRC
ssi
sso
ssr
V
V,V52=
SD
V0=
SG
HM0.1=f
Z
edoiDniarD-ecruoS
Switching
tnerruCdrawroFedoiD.xaMI
egatloVdrawroFedoiDV
s
DS
I
V
DD
---052Am
V,Am052=
S
V0=-39.02.1V
SG
Test Circuit
R
V
IN
R
G
L
V
OUT
--05
--52
--5
Gate Charge
Test Circuit
1mA
FpecnaticapaCtuptuOC
V
DD
R
V
GS
R
G
L
PAGE . 2August 29,2013-REV.03
Fig. 1-TYPICAL FORWARD CHARACTERISTIC
FIG.1- Output Characteristic
Typical Characteristics Curves (T =25 C,unless otherwise noted)
A
O
FIG.2- Transfer Characteristic
FIG.3- On Resistance vs Drain Current
FIG.4- On Resistance vs Gate to Source Voltage
FIG.5- On Resistance vs Junction Temperature
0
0.2
0.4
0.6
0.8
1
1.2
012345
VDS- Drain-to-Source Voltage (V)
I
D
- Drain-to-Source Current (A)
5.0V
4.0V
3.0V
VGS= 6.0~10V
0
0.2
0.4
0.6
0.8
1
1.2
0123456
VGS- Gate-to-Source Voltage (V)
I
D
- Drain Source Current (A)
VDS=10V
0
1
2
3
4
5
0 0.2 0.4 0.6 0.8 1 1.2
ID- Drain Current (A)
R
DS(ON)
- On-Resistance
()W
VGS=4.5V
VGS=10V
0
2
4
6
8
10
2345678910
V
GS
- Gate-to-Source Voltage (V)
R
DS(ON)
- On-Resistance
ID=500mA
o
C
T =125
J
o
C
T=25
J
()W
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-50 -25 0 25 50 75 100 125 150
TJ- Junction Temperature (oC)
R
DS(ON)
- On-Res istanc e(Nor malized)
VGS=10V
I
D
=500mA
o
C
T=25
J
2N7002
PAGE . 3August 29,2013-REV.03
2N7002
Vgs
Qg
Vgs(th)
Qg(th)
Qsw
QgdQgs
Fig.6 - Gate Charge Waveform
1.2
1.1
1
0.9
0.8
0.7
- G-S Threshold Voltage (NORMALIZED)
th
0.6
V
-50 -25 0 25 50 75 100 125 150
TJ- Junction Temperature (oC)
ID=250 Am
Qg
10
V
15V
DS=
=500mA
I
8
D
6
4
2
- Gate-t o -So u rce Vo ltage (V)
GS
V
0
0 0.2 0.4 0.6 0.8 1
Qg- Gate Charge (nC)
Fig.7 - Gate Charge
73
I=250ADm
72
71
70
69
68
67
66
- Breakdown Voltage (V)
65
DSS
64
BV
-50-250 255075100125150
TJ- Junction Temperature (oC)
Fig.8 - Threshold Voltage vs Temperature
10
VGS=0V
1
0.1
- Sour ce Current (A)
S
I
0.01
TJ=125oC
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
T=25
J
o
C
o
T =-55
C
J
VSD- Source-to-Drain Voltage (V)
Fig.10 - Source-Drain Diode Forward Voltage
Fig.9 - Breakdown Voltage vs Junction Temperature
80
70
60
50
Ciss
40
30
C - Capacitance (pF)
20
Coss
10
Crss
0
0 5 10 15 20 25
VDS- Drain-to-Source Voltage (V)
f=1MHz
=0V
V
GS
Fig.11 - Capacitance vs Drain to Source Voltage
PAGE . 4August 29,2013-REV.03
2N7002
MOUNTING PAD LA YOUT
0.035 MIN.
(0.90) MIN.
0.031 MIN.
(0.80) MIN.
0.037
(0.95)
0.043
(1.10)
0.078
(2.00)
ORDER INFORMA TION
• Packing information
T/R - 12K per 13" plastic Reel
T/R - 3K per 7" plastic Reel
0.043
(1.10)
0.106
(2.70)
PAGE . 5August 29,2013-REV.03
2N7002
Part No_packing code_V ersion
2N7002_R1_00001
2N7002_R2_00001
For exa mple :
RB500V-40_R2_00001
Part No.
Packing type 1st Code Packing size code 2nd Code HF or RoHS 1st Code 2nd~5
Tape and Ammunition Box
(T/B)
Tape and Reel
(T/R )
Bu lk Pac k ing
(B/P)
Tu be Pac ki ng
(T/P)
Tape and Reel (R ight Oriented)
(TRR)
Tape and Reel (Left Oriented)
(TRL)
FORMING F
Serial number
Version code means HF
Packing size code means 13"
Packing type means T/R
Packing Code XX Versio n C ode XXXXX
A
R
B
T
S
L
PANASERT T/B CATHODE UP
PANASERT T/B CATHODE DOWN
N/A 0 HF 0 serial number
7" 1 RoHS 1 serial number
13" 2
26mm X
52mm Y
(PBCU)
(PBCD)
U
D
th
Code
PAGE . 6August 29,2013-REV.03
2N7002
Disclaimer
Reproducing and modifying information of the document is prohibited without permission
•
from Panjit International Inc..
Panjit International Inc. reserves the rights to make changes of the content herein the
•
document anytime without notification. Please refer to our website for the latest
document.
Panjit International Inc. disclaims any and all liability arising out of the application or use of
•
any product including damages incidentally and consequentially occurred.
Panjit International Inc. does not assume any and all implied warranties, including warranties
•
of fitness for particular purpose, non-infringement and merchantability.
Applications shown on the herein document are examples of standard use and operation.
•
Customers are responsible in comprehending the suitable use in particular applications.
Panjit International Inc. makes no representation or warranty that such applications will be
suitable for the specified use without further testing or modification.
The products shown herein are not designed and authorized for equipments requiring high
•
level of reliability or relating to human life and for any applications concerning life-saving
or life-sustaining, such as medical instruments, transportation equipment, aerospace
machinery et cetera. Customers using or selling these products for use in such applications
do so at their own risk and agree to fully indemnify Panjit International Inc. for any damages
resulting from such improper use or sale.
Since Panjit uses lot number as the tracking base, please provide the lot number for tracking
•
when complaining.
August 29,2013-REV.03
PAGE . 7
Loading...